SiC MOSFETs
349 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: TW027N65C,S1F TTI: TW027N65C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 27mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 58 A | 37 mOhms | - 10 V, + 25 V | 5 V | 65 nC | - 55 C | + 175 C | 156 W | Enhancement | |||||
Mfr: TW030N120C,S1F TTI: TW030N120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 40 mOhms | - 10 V, + 25 V | 5 V | 82 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
Mfr: SCT3080KLGC11 TTI: SCT3080KLGC11 ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 31 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT3080KL | ||||
Mfr: TW060N120C,S1F TTI: TW060N120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 36 A | 182 mOhms | - 10 V, + 25 V | 5 V | 46 nC | - 55 C | + 175 C | 170 W | Enhancement | |||||
Mfr: SCT3160KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V 17A 103W SIC 160mOhm TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 103 W | Enhancement | AEC-Q101 | SCT3160KLHR | ||||
0In Stock | IXYS | SMD/SMT | HiPerFET | ||||||||||||||||||
Mfr: MXP120A063SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | |||||
0In Stock | IXYS | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
0In Stock | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
Mfr: IXSJ80N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | IXYS | Through Hole | TO-247-3L | N-Channel | 1 Channel | 1.2 kV | 85 A | 22.5 mOhms | - 4 V, + 21 V | 4.8 V | 154 nC | - 40 C | + 150 C | 266 W | Enhancement | |||||
Mfr: IXSA65N120L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 65 A | 53 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 417 W | Enhancement | |||||
Mfr: MXP120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
Mfr: MXPQ120A045SE-1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 10 V, + 22 V | 5.6 V | 42 nC | + 175 C | 59 W | Enhancement | SCT3160KW7HR | ||||||
Mfr: TW015Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 100 A | 15 mOhms | - 10 V, + 25 V | 5 V | 128 nC | + 175 C | 342 W | Enhancement | ||||||
Mfr: TW048Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 40 A | 48 mOhms | - 10 V, + 25 V | 5 V | 41 nC | + 175 C | 132 W | Enhancement | ||||||
0In Stock | IXYS | SMD/SMT | TOLL-8 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
Mfr: TW107N65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 20 A | 113 mOhms | - 10 V, + 25 V | 5 V | 28 nC | - 55 C | + 175 C | 111 W | Enhancement | |||||
Mfr: SCT3120ALHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 650V 21A 103W SIC 120mOhm TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 21 A | 156 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | + 175 C | 103 W | Enhancement | AEC-Q101 | SCT3120ALHR | ||||
Mfr: TW015Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 100 A | 15 mOhms | - 10 V, + 25 V | 5 V | 158 nC | + 175 C | 431 W | Enhancement | ||||||
Mfr: TW030Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 60 A | 30 mOhms | - 10 V, + 25 V | 5 V | 82 nC | + 175 C | 249 W | Enhancement | ||||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 10 A | 585 mOhms | - 6 V, + 22 V | 4 V | 27 nC | + 175 C | 85 W | Enhancement | SCT2450KEHR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 750 V | 105 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | AEC-Q101 | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | N-Channel | 1 Channel | 750 V | 38 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 115 W | Enhancement | AEC-Q101 |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel