SiC MOSFETs
363 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 10 V, + 22 V | 5.6 V | 42 nC | + 175 C | 59 W | Enhancement | SCT3160KW7HR | ||||||
Mfr: IXSJ80N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | Through Hole | TO-247-3L | 1 Channel | 1.2 kV | 85 A | 22.5 mOhms | - 4 V, + 21 V | 4.8 V | 154 nC | - 40 C | + 150 C | 266 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
0In Stock | SMD/SMT | TOLL-8 | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247AD-4L | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | ||||||
Mfr: TW015Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 100 A | 15 mOhms | - 10 V, + 25 V | 5 V | 158 nC | + 175 C | 431 W | Enhancement | ||||||
Mfr: TW015Z65C,S1F TTI: Not Assigned Toshiba Availability: Not Available OnlineSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm | Not Available Online | Through Hole | TO-247-4 | 1 Channel | 650 V | 100 A | 15 mOhms | - 10 V, + 25 V | 5 V | 128 nC | + 175 C | 342 W | Enhancement | ||||||
Mfr: IXSA65N120L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L | 0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 65 A | 53 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 417 W | Enhancement | |||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 67 A | 46 mOhms | - 5 V, + 20 V | 4 V | 83 nC | - 55 C | + 175 C | 288 W | Enhancement | ||||||
Mfr: TW030Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 60 A | 30 mOhms | - 10 V, + 25 V | 5 V | 82 nC | + 175 C | 249 W | Enhancement | ||||||
Mfr: TW048Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 40 A | 48 mOhms | - 10 V, + 25 V | 5 V | 41 nC | + 175 C | 132 W | Enhancement | ||||||
Mfr: SCT3160KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V 17A 103W SIC 160mOhm TO-247N | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 103 W | Enhancement | AEC-Q101 | SCT3160KLHR | ||||
Mfr: MXP120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
Mfr: MXP120A063SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | |||||
Mfr: MXPQ120A045SE-1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
Not Available Online | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | SCT3160KW7 | ||||||
Image Not Available Mfr: TW092V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | SMD/SMT | DFN-5 | 1 Channel | 650 V | 27 A | 136 mOhms | - 10 V, 25 V | 5 V | 28 nC | + 175 C | 111 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 112 A | 23.4 mOhms | - 5 V, + 20 V | 4 V | 149 nC | - 55 C | + 175 C | 405 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 750 V | 25 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | |||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 750 V | 22 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 71 W | Enhancement | AEC-Q101 | ||||||
Mfr: IXSA110N65L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L | 0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | |||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | AEC-Q101 | ||||||
Mfr: MXP120A045SW-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-3 | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 84 nC | - 55 C | + 175 C | 254 W | Enhancement | |||||
Mfr: NSF017120T2A0J TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF017120T2A0/SOT8107/X.PAK | 0In Stock | SMD/SMT | SOT8107-2-7 | 1 Channel | 1.2 kV | 122 A | 26 mOhms | - 10 V, + 22 V | 2.9 V | 190 nC | - 55 C | + 175 C | 517 W | Enhancement | 934669058118 |