SiC MOSFETs
363 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: TW140Z120C,S1F TTI: TW140Z120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 20 A | 140 mOhms | - 10 V, + 25 V | 5 V | 24 nC | + 175 C | 107 W | Enhancement | ||||||
Mfr: SCT4018KWATL TTI: SCT4018KWATL ROHM Semiconductor Availability: 0In StockSiC MOSFETs TO263 1.2KV 75A N-CH SIC | 0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 75 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | Enhancement | |||||||
Mfr: TW045Z120C,S1F TTI: TW045Z120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 40 A | 45 mOhms | - 10 V, + 25 V | 5 V | 57 nC | + 175 C | 182 W | Enhancement | ||||||
Mfr: SCT4026DWATL TTI: SCT4026DWATL ROHM Semiconductor Availability: 0In StockSiC MOSFETs TO263 750V 51A N-CH SIC | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 750 V | 51 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 150 W | Enhancement | ||||||
Mfr: SCT2H12NWBTL1 TTI: SCT2H12NWBTL1 ROHM Semiconductor Availability: 0In StockSiC MOSFETs TO263 1.7KV N-CH 3.9A | 0In Stock | SMD/SMT | TO-263CA-7 | 1 Channel | 1.7 kV | 3.9 A | 1.5 Ohms | - 6 V to + 22 V | 4 V | 24 nC | + 175 C | 39 W | Enhancement | ||||||
Mfr: SCT4020DLLTRDC TTI: SCT4020DLLTRDC ROHM Semiconductor Availability: 0In StockSiC MOSFETs TOLL 750V 80A SIC | 0In Stock | SMD/SMT | TOLL-9 | 1 Channel | 750 V | 80 A | 4.8 V | 123 nC | + 175 C | 277 W | Enhancement | ||||||||
Mfr: SCT4026DRHRC15 TTI: SCT4026DRHRC15 ROHM Semiconductor Availability: 0In StockSiC MOSFETs TO247 750V 56A N-CH SIC | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 750 V | 56 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 176 W | Enhancement | SCT4026DRHR | |||||
Mfr: SCT4018KEC11 TTI: SCT4018KEC11 ROHM Semiconductor Availability: 0In StockSiC MOSFETs TO247 1.2KV 81A N-CH SIC | 0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 81 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4018KE | |||||
Mfr: SCT4062KRHRC15 TTI: SCT4062KRHRC15 ROHM Semiconductor Availability: 0In StockSiC MOSFETs TO247 1.2KV 26A N-CH SIC | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KRHR | |||||
Mfr: SCT4026DWAHRTL TTI: SCT4026DWAHRTL ROHM Semiconductor Availability: 0In StockSiC MOSFETs TO263 750V 51A N-CH SIC | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 750 V | 51 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 150 W | Enhancement | ||||||
Mfr: TW048N65C,S1F TTI: TW048N65C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 40 A | 65 mOhms | - 10 V, + 25 V | 5 V | 41 nC | - 55 C | + 175 C | 132 W | Enhancement | |||||
Mfr: TW015N120C,S1F TTI: TW015N120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 100 A | 182 mOhms | - 10 V, + 25 V | 5 V | 158 nC | - 55 C | + 175 C | 431 W | Enhancement | |||||
Mfr: SCT2750NWCTL1 TTI: SCT2750NWCTL1 ROHM Semiconductor Availability: 0In StockSiC MOSFETs TO268 1.7KV 5.9A N CH SIC | 0In Stock | SMD/SMT | TO-263CA-7L | 1 Channel | 1.7 kV | 5.6 A | 975 mOhms | - 6 V, + 22 V | 4 V | 28 nC | - 55 C | + 175 C | 53 W | Enhancement | |||||
Mfr: TW045N120C,S1F TTI: TW045N120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 40 A | 182 mOhms | - 10 V, + 25 V | 5 V | 57 nC | - 55 C | + 175 C | 182 W | Enhancement | |||||
Mfr: TW027N65C,S1F TTI: TW027N65C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 27mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 58 A | 37 mOhms | - 10 V, + 25 V | 5 V | 65 nC | - 55 C | + 175 C | 156 W | Enhancement | |||||
Mfr: TW030N120C,S1F TTI: TW030N120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 40 mOhms | - 10 V, + 25 V | 5 V | 82 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
Mfr: SCT3080KLGC11 TTI: SCT3080KLGC11 ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 31 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT3080KL | ||||
Mfr: TW060N120C,S1F TTI: TW060N120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 36 A | 182 mOhms | - 10 V, + 25 V | 5 V | 46 nC | - 55 C | + 175 C | 170 W | Enhancement | |||||
Mfr: SCT3040KLGC11 TTI: SCT3040KLGC11 ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 1200V SiC 55A 40mOhm TrenchMOS | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 55 A | 52 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | - 55 C | + 175 C | 262 W | Enhancement | SCT3040KL | ||||
Mfr: SCT3022ALGC11 TTI: SCT3022ALGC11 ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 650V SiC 93A 22mOhm TrenchMOS | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 93 A | 28.6 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | 339 W | Enhancement | SCT3022AL | ||||
Mfr: TW015N65C,S1F TTI: TW015N65C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 100 A | 21 mOhms | - 10 V, + 25 V | 5 V | 128 nC | - 55 C | + 175 C | 342 W | Enhancement | |||||
Mfr: TW083N65C,S1F TTI: TW083N65C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 20 A | 145 mOhms | - 10 V, + 25 V | 5 V | 21 nC | - 55 C | + 175 C | 76 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | |||||||
Mfr: IXSH80N120L2KHV TTI: Not Assigned IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | ||||||
Mfr: IXSJ43N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | Through Hole | TO-247-3L | 1 Channel | 1.2 kV | 45 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 142 W | Enhancement |