SiC MOSFETs
363 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
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Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 14 A | 280 mOhms | - 6 V, + 22 V | 4 V | 36 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | Through Hole | TO-3P | 1 Channel | 1.2 kV | 36 A | 70 mOhms | - 10 V, + 25 V | 5.8 V | 67 nC | - 55 C | + 175 C | 272 W | Enhancement | |||||
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Not Available Online | Through Hole | TO-247-3 | 1 Channel | 650 V | 21 A | 120 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | - 55 C | + 175 C | 103 W | Enhancement | |||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 650 V | 30 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 55 A | 40 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | - 55 C | + 175 C | Enhancement | ||||||
Mfr: LSICMO120E0080 TTI: Not Assigned Littelfuse Availability: Not Available OnlineSiC MOSFETs 1200V 80mOhm SiC MOSFET | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 25 A | 80 mOhms | 95 nC | - 55 C | + 150 C | 179 W | Enhancement | ||||||
Not Available Online | SMD/SMT | D2PAK-7 (TO-263-7) | ||||||||||||||||
Not Available Online | SMD/SMT | D2PAK-7 (TO-263-7) | ||||||||||||||||
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