SiC MOSFETs
318 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 29 A | 120 mOhms | - 6 V, + 22 V | 4 V | 61 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 10 A | 450 mOhms | - 6 V, + 22 V | 4 V | 27 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 118 A | 17 mOhms | - 4 V, + 22 V | 5.6 V | 172 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 72 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 131 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | |||||||||||||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 24 A | 105 mOhms | - 4 V, + 22 V | 5.6 V | 51 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 93 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | 339 W | Enhancement | |||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | - 55 C | + 175 C | 165 W | Enhancement | |||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 93 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | 339 W | Enhancement | |||||
Not Available Online | ROHM Semiconductor | |||||||||||||||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 31 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 40 A | 80 mOhms | - 6 V, + 22 V | 4 V | 110 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | |||||||||||||||||
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | Toshiba |
