SiC MOSFETs
318 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | |||||||||||||||||
Mfr: MKE11R600DCGFC TTI: Not Assigned IXYS Availability: Not Available OnlineSiC MOSFETs CoolMOS Power Mosfet 600V 15A | Not Available Online | IXYS | Through Hole | ISOPLUS i4-PAC-5 | N-Channel | 1 Channel | 600 V | 15 A | 165 mOhms | - 20 V, + 20 V | 3 V | 40 nC | CoolMOS | |||||||
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | |||||||||||||||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 95 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | 427 W | Enhancement | |||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 118 A | 17 mOhms | - 4 V, + 22 V | 5.6 V | 172 nC | - 55 C | + 175 C | 427 W | Enhancement | |||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 40 A | 80 mOhms | - 6 V, + 22 V | 4 V | 106 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 22 A | 160 mOhms | - 6 V, + 22 V | 4 V | 62 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 70 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 93 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 95 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | Littelfuse | |||||||||||||||||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | |||||||||||||||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | |||||||||||||||||
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | Toshiba | |||||||||||||||||||
Not Available Online | Toshiba | |||||||||||||||||||
Mfr: LSICMO120E0080 TTI: Not Assigned Littelfuse Availability: Not Available OnlineSiC MOSFETs 1200V 80mOhm SiC MOSFET | Not Available Online | Littelfuse | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 25 A | 80 mOhms | 95 nC | - 55 C | + 150 C | 179 W | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 21 A | 120 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | - 55 C | + 175 C | 103 W | Enhancement | |||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 30 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | - 55 C | + 175 C | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | - 55 C | + 175 C | Enhancement |
