SiC MOSFETs
363 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
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Mfr: TW048N65C,S1F TTI: TW048N65CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 650V 40A N-CH MOSFET | 0In Stock | ||||||||||||||||||
Mfr: TW060N120C,S1F TTI: TW060N120CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 1.2KV 36A N-CH MOSFET | 0In Stock | ||||||||||||||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 14 A | 280 mOhms | - 6 V, + 22 V | 4 V | 36 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | Through Hole | TO-3P | 1 Channel | 1.2 kV | 36 A | 70 mOhms | - 10 V, + 25 V | 5.8 V | 67 nC | - 55 C | + 175 C | 272 W | Enhancement | ||||||
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Mfr: SCT2160KEC TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 1200V20A160mOhm Silicon Carbide SiC | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 22 A | 160 mOhms | - 6 V, + 22 V | 1.6 V | 62 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT2160KE | ||||
Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 72 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 131 nC | - 55 C | + 175 C | 339 W | Enhancement | ||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 10 A | 450 mOhms | - 6 V, + 22 V | 4 V | 27 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 650 V | 118 A | 17 mOhms | - 4 V, + 22 V | 5.6 V | 172 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 1.2 kVAC | 72 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 131 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | 1 Channel | 650 V | 29 A | 120 mOhms | - 6 V, + 22 V | 4 V | 61 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | D2PAK-7 (TO-263-7) | |||||||||||||||||
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