SiC MOSFETs
349 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
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Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | ||||||||||||||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 21 A | 120 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | - 55 C | + 175 C | 103 W | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 30 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 55 A | 40 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Mfr: SCT2160KEC TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 1200V20A160mOhm Silicon Carbide SiC | Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 160 mOhms | - 6 V, + 22 V | 1.6 V | 62 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT2160KE | ||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | ||||||||||||||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 29 A | 120 mOhms | - 6 V, + 22 V | 4 V | 61 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 10 A | 450 mOhms | - 6 V, + 22 V | 4 V | 27 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 118 A | 17 mOhms | - 4 V, + 22 V | 5.6 V | 172 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 72 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 131 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 72 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 131 nC | - 55 C | + 175 C | 339 W | Enhancement | ||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | ||||||||||||||||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) | ||||||||||||||||||
Not Available Online | Toshiba | ||||||||||||||||||||
Mfr: LSIC1MO170E1000 TTI: Not Assigned IXYS Availability: Not Available OnlineSiC MOSFETs 1700V 1000mOhm SiC MOSFET | Not Available Online | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 5 A | 1 Ohms | - 5 V, + 20 V | 1.8 V | 15 nC | - 55 C | + 150 C | 54 W | Enhancement | |||||
Not Available Online | Littelfuse | SMD/SMT | D2PAK-7 (TO-263-7) |
