SiC MOSFETs
363 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 30 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | + 175 C | 134 W | Enhancement | |||||||
Mfr: SCT4036KTWHRTCR TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V, 41A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | 0In Stock | SMD/SMT | TSC3PAK-9 | 1 Channel | 1.2 kV | 84 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | - 40 C | + 175 C | Enhancement | AEC-Q101 | |||||
Mfr: NSF030120L3A0Q TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF030120L3A0/SOT429-2/TO247-3 | 0In Stock | 934667959127 | |||||||||||||||||
Mfr: NSF030120L4A0Q TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF030120L4A0/SOT8071/TO247-4L | 0In Stock | 934667961127 | |||||||||||||||||
Mfr: NSF060120D7A0J TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF060120D7A0/SOT8070/TO263-7L | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 38 A | 60 mOhms | - 10 V, + 22 V | 2.9 V | 57 nC | - 55 C | + 175 C | 167 W | Enhancement | 934667964118 | ||||
Mfr: NSF060120L4A0Q TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF060120L4A0/SOT8071/TO247-4L | 0In Stock | 934667962127 | |||||||||||||||||
Mfr: NSF040120T1A1-QHP TTI: Not Assigned Nexperia Availability: 0In StockSiC MOSFETs NSF040120T1A1-Q/SOT8114/QDPAK | 0In Stock | 934669821128 | |||||||||||||||||
Mfr: SCT4050KTWHRTCR TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V, 31A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | 0In Stock | SMD/SMT | TSC3PAK-9 | 1 Channel | 1.2 kV | 73 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | - 40 C | + 175 C | Enhancement | AEC-Q101 | |||||
Mfr: MXP120A080FW-GE3 TTI: MXP120A080FW-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 29 A | 100 mOhms | - 10 V, + 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 139 W | Enhancement | MaxSIC | ||||
0In Stock | TW060Z120C,S1F | ||||||||||||||||||
Mfr: TW140Z120C,S1F TTI: TW140Z120CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 1.2KV 20A N-CH MOSFET | 0In Stock | TW140Z120C,S1F | |||||||||||||||||
Mfr: MXP120A045FW-GE3 TTI: MXP120A045FW-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, + 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 227 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A250FW-GE3 TTI: MXP120A250FW-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A080FE-T1GE3 TTI: MXP120A080FE-T1GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 30 A | 100 mOhms | - 10 V, 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 140 W | Enhancement | |||||
0In Stock | TW045Z120C,S1F | ||||||||||||||||||
Mfr: MXP120A045FL-GE3 TTI: MXP120A045FL-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, + 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 227 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A250FL-GE3 TTI: MXP120A250FL-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A045FE-T1GE3 TTI: MXP120A045FE-T1GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 212 W | Enhancement | |||||
Mfr: TW015N120C,S1F TTI: TW015N120CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 1.2KV 100A N-CH MOSFET | 0In Stock | ||||||||||||||||||
Mfr: TW015N65C,S1F TTI: TW015N65CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 650V 100A N-CH MOSFET | 0In Stock | ||||||||||||||||||
Mfr: TW083N65C,S1F TTI: TW083N65CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 650V 20A N-CH MOSFET | 0In Stock | ||||||||||||||||||
Mfr: MXP120A080FL-GE3 TTI: MXP120A080FL-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 29 A | 100 mOhms | - 10 V, + 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 139 W | Enhancement | MaxSIC | ||||
Mfr: TW030N120C,S1F TTI: TW030N120CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 1.2KV 60A N-CH MOSFET | 0In Stock | ||||||||||||||||||
Mfr: TW048N65C,S1F TTI: TW048N65CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 650V 40A N-CH MOSFET | 0In Stock | ||||||||||||||||||
Mfr: TW027N65C,S1F TTI: TW027N65CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 650V 58A N-CH MOSFET | 0In Stock |