SiC MOSFETs
318 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Nexperia | SMD/SMT | QDPAK-22 | N-Channel | 1 Channel | 1200 V | 68 A | 45 mOhms | - 10 V, + 22 V | 2.9 V | 108 nC | - 55 C | + 175 C | 313 W | Enhancement | 934669815128 | |||||
0In Stock | Nexperia | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 35 A | 120 mOhms | - 10 V, + 22 V | 2.9 V | 52 nC | - 55 C | + 175 C | 183 W | Enhancement | 934665930127 | |||||
Mfr: SCT3030KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 1200V 72A 339W SIC 30mOhm TO-247N | Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 72 A | 39 mOhms | - 4 V, + 22 V | 5.6 V | 131 nC | - 55 C | + 175 C | 339 W | Enhancement | AEC-Q101 | SCT3030KLHR | |||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 650 V | 21 A | 156 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | + 175 C | 100 W | Enhancement | SCT3120AW7 | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 30 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | + 175 C | 134 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 56 A | 52 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | + 175 C | 267 W | Enhancement | SCT3040KW7 | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 650 V | 29 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | + 175 C | 125 W | Enhancement | SCT3080AW7 | ||||||
Mfr: SCT3060ALHRC11 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 650V 39A 165W SIC 60mOhm TO-247N | Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 39 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | AEC-Q101 | SCT3060ALHR | ||||
Mfr: SCT3105KLGC11 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs Nch 1200V 24A SiC TO-247N | Not Available Online | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 24 A | 137 mOhms | - 4 V, + 22 V | 5.6 V | 51 nC | + 175 C | 134 W | Enhancement | SCT3105KL | |||||
0In Stock | Nexperia | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 38 A | 60 mOhms | - 10 V, + 22 V | 2.9 V | 57 nC | - 55 C | + 175 C | 167 W | Enhancement | 934667964118 | |||||
Mfr: MXP120A080FE-T1GE3 TTI: MXP120A080FE-T1GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 30 A | 100 mOhms | - 10 V, 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 140 W | Enhancement | |||||
0In Stock | Toshiba | TW060Z120C,S1F | |||||||||||||||||||
Mfr: TW140Z120C,S1F TTI: TW140Z120CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 1.2KV 20A N-CH MOSFET | 0In Stock | Toshiba | TW140Z120C,S1F | ||||||||||||||||||
Mfr: MXP120A250FW-GE3 TTI: MXP120A250FW-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A045FL-GE3 TTI: MXP120A045FL-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, + 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 227 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A250FL-GE3 TTI: MXP120A250FL-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | ||||
0In Stock | Toshiba | TW045Z120C,S1F | |||||||||||||||||||
Mfr: MXP120A045FW-GE3 TTI: MXP120A045FW-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, + 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 227 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A045FE-T1GE3 TTI: MXP120A045FE-T1GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 212 W | Enhancement | |||||
Mfr: TW015N120C,S1F TTI: TW015N120CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 1.2KV 100A N-CH MOSFET | 0In Stock | Toshiba | |||||||||||||||||||
Mfr: TW015N65C,S1F TTI: TW015N65CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 650V 100A N-CH MOSFET | 0In Stock | Toshiba | |||||||||||||||||||
Mfr: TW083N65C,S1F TTI: TW083N65CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 650V 20A N-CH MOSFET | 0In Stock | Toshiba | |||||||||||||||||||
Mfr: TW027N65C,S1F TTI: TW027N65CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 650V 58A N-CH MOSFET | 0In Stock | Toshiba | |||||||||||||||||||
Mfr: TW045N120C,S1F TTI: TW045N120CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 1.2KV 40A N-CH MOSFET | 0In Stock | Toshiba | |||||||||||||||||||
Mfr: TW060N120C,S1F TTI: TW060N120CS1F Toshiba Availability: 0In StockSiC MOSFETs TO247 1.2KV 36A N-CH MOSFET | 0In Stock | Toshiba |
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