MXP - Vishay - SiC MOSFETs
19 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: MXP120A080FW-GE3 TTI: MXP120A080FW-GE3 Vishay Semiconductors Availability: 5In StockSiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET | 5In Stock | Vishay | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 29 A | 100 mOhms | - 10 V, + 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 139 W | Enhancement | MaxSIC | |||
Mfr: MXP120A080FL-GE3 TTI: MXP120A080FL-GE3 Vishay Semiconductors Availability: 5In StockSiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET | 5In Stock | Vishay | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 29 A | 100 mOhms | - 10 V, + 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 139 W | Enhancement | MaxSIC | |||
Mfr: MXP120A045SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | ||||
Mfr: MXP120A080SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 31 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 45 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||
Mfr: MXPQ120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | ||||
Mfr: MXP120A063SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | ||||
Mfr: MXP120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | ||||
Mfr: MXPQ120A045SE-1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | ||||
Mfr: MXPQ120A045SW-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 83 nC | - 55 C | + 175 C | 254 W | Enhancement | ||||
Mfr: MXP120A045SW-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-3 | N-Channel | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 84 nC | - 55 C | + 175 C | 254 W | Enhancement | ||||
Mfr: MXP120A080SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 32 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | ||||
Mfr: MXPQ120A080SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | ||||
Mfr: MXP120A045SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 83 nC | - 55 C | + 175 C | 254 W | Enhancement | ||||
Mfr: MXP120A250FW-GE3 TTI: MXP120A250FW-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | |||
Mfr: MXP120A080FE-T1GE3 TTI: MXP120A080FE-T1GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 30 A | 100 mOhms | - 10 V, 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 140 W | Enhancement | ||||
Mfr: MXP120A250FL-GE3 TTI: MXP120A250FL-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | |||
Mfr: MXP120A045FL-GE3 TTI: MXP120A045FL-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, + 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 227 W | Enhancement | MaxSIC | |||
Mfr: MXP120A045FW-GE3 TTI: MXP120A045FW-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, + 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 227 W | Enhancement | MaxSIC | |||
Mfr: MXP120A045FE-T1GE3 TTI: MXP120A045FE-T1GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 212 W | Enhancement |
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