Toshiba - SiC MOSFETs
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Part | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
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Mfr: TW060N120C,S1F TTI: TW060N120C,S1F Toshiba Availability: 30In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm | 30In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 36 A | 182 mOhms | - 10 V, + 25 V | 5 V | 46 nC | - 55 C | + 175 C | 170 W | Enhancement | ||||
Mfr: TW015N65C,S1F TTI: TW015N65C,S1F Toshiba Availability: 30In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm | 30In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 100 A | 21 mOhms | - 10 V, + 25 V | 5 V | 128 nC | - 55 C | + 175 C | 342 W | Enhancement | ||||
Mfr: TW015N120C,S1F TTI: TW015N120C,S1F Toshiba Availability: 30In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm | 30In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 100 A | 182 mOhms | - 10 V, + 25 V | 5 V | 158 nC | - 55 C | + 175 C | 431 W | Enhancement | ||||
Mfr: TW048N65C,S1F TTI: TW048N65C,S1F Toshiba Availability: 30In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm | 30In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 40 A | 65 mOhms | - 10 V, + 25 V | 5 V | 41 nC | - 55 C | + 175 C | 132 W | Enhancement | ||||
Mfr: TW060N120C,S1F TTI: TW060N120CS1F Toshiba Availability: 30In StockSiC MOSFETs TO247 1.2KV 36A N-CH MOSFET | 30In Stock | Toshiba | ||||||||||||||||||
Mfr: TW048N65C,S1F TTI: TW048N65CS1F Toshiba Availability: 30In StockSiC MOSFETs TO247 650V 40A N-CH MOSFET | 30In Stock | Toshiba | ||||||||||||||||||
Mfr: TW015N120C,S1F TTI: TW015N120CS1F Toshiba Availability: 30In StockSiC MOSFETs TO247 1.2KV 100A N-CH MOSFET | 30In Stock | Toshiba | ||||||||||||||||||
Mfr: TW015N65C,S1F TTI: TW015N65CS1F Toshiba Availability: 30In StockSiC MOSFETs TO247 650V 100A N-CH MOSFET | 30In Stock | Toshiba | ||||||||||||||||||
Mfr: TW140N120C,S1F TTI: TW140N120C,S1F Toshiba Availability: 0In Stock750 On Order Expected 30-Oct-26 SiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm | 0In Stock750 On Order Expected 30-Oct-26 | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 20 A | 182 mOhms | - 10 V, + 25 V | 5 V | 24 nC | - 55 C | + 175 C | 107 W | Enhancement | ||||
Mfr: TW140N120C,S1F TTI: TW140N120CS1F Toshiba Availability: 0In Stock750 On Order Expected 30-Oct-26 SiC MOSFETs TO247 1.2KV 20A N-CH MOSFET | 0In Stock750 On Order Expected 30-Oct-26 | Toshiba | ||||||||||||||||||
Mfr: TW045Z120C,S1F TTI: TW045Z120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 40 A | 45 mOhms | - 10 V, + 25 V | 5 V | 57 nC | + 175 C | 182 W | Enhancement | |||||
Mfr: TW140Z120C,S1F TTI: TW140Z120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 20 A | 140 mOhms | - 10 V, + 25 V | 5 V | 24 nC | + 175 C | 107 W | Enhancement | |||||
Mfr: TW060Z120C,S1F TTI: TW060Z120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 36 A | 60 mOhms | - 10 V, + 25 V | 5 V | 46 nC | + 175 C | 170 W | Enhancement | |||||
Mfr: TW083N65C,S1F TTI: TW083N65C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 20 A | 145 mOhms | - 10 V, + 25 V | 5 V | 21 nC | - 55 C | + 175 C | 76 W | Enhancement | ||||
Mfr: TW027N65C,S1F TTI: TW027N65C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 27mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 58 A | 37 mOhms | - 10 V, + 25 V | 5 V | 65 nC | - 55 C | + 175 C | 156 W | Enhancement | ||||
Mfr: TW030N120C,S1F TTI: TW030N120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 40 mOhms | - 10 V, + 25 V | 5 V | 82 nC | - 55 C | + 175 C | 249 W | Enhancement | |||||
Mfr: TW045N120C,S1F TTI: TW045N120C,S1F Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 40 A | 182 mOhms | - 10 V, + 25 V | 5 V | 57 nC | - 55 C | + 175 C | 182 W | Enhancement | ||||
Mfr: TW027Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 58 A | 27 mOhms | - 10 V, + 25 V | 5 V | 65 nC | + 175 C | 156 W | Enhancement | |||||
Mfr: TW107Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 107mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 20 A | 107 mOhms | - 10 V, + 25 V | 5 V | 21 nC | + 175 C | 76 W | Enhancement | |||||
Mfr: TW083Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 30 A | 83 mOhms | - 10 V, + 25 V | 5 V | 28 nC | + 175 C | 111 W | Enhancement | |||||
Image Not Available Mfr: TW054V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | Toshiba | SMD/SMT | DFN-5 | N-Channel | 1 Channel | 650 V | 36 A | 81 mOhms | - 10 V, 25 V | 5 V | 41 nC | + 175 C | 132 W | Enhancement | |||||
Image Not Available Mfr: TW092V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | Toshiba | SMD/SMT | DFN-5 | N-Channel | 1 Channel | 650 V | 27 A | 136 mOhms | - 10 V, 25 V | 5 V | 28 nC | + 175 C | 111 W | Enhancement | |||||
Image Not Available Mfr: TW031V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | Toshiba | SMD/SMT | DFN-5 | N-Channel | 1 Channel | 650 V | 53 A | 45 mOhms | - 10 V, 25 V | 5 V | 65 nC | + 175 C | 156 W | Enhancement | |||||
Image Not Available Mfr: TW123V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | Toshiba | SMD/SMT | DFN-5 | N-Channel | 1 Channel | 650 V | 18 A | 183 mOhms | - 10 V, 25 V | 5 V | 21 nC | + 175 C | 76 W | Enhancement | |||||
Mfr: TW015Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 100 A | 15 mOhms | - 10 V, + 25 V | 5 V | 128 nC | + 175 C | 342 W | Enhancement |
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