ROHM Semiconductor - SiC MOSFETs
169 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 30 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 21 A | 120 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | - 55 C | + 175 C | 103 W | Enhancement | ||||||
Mfr: SCT2160KEC TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs 1200V20A160mOhm Silicon Carbide SiC | Not Available Online | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 160 mOhms | - 6 V, + 22 V | 1.6 V | 62 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT2160KE | ||||
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 29 A | 120 mOhms | - 6 V, + 22 V | 4 V | 61 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 10 A | 450 mOhms | - 6 V, + 22 V | 4 V | 27 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 118 A | 17 mOhms | - 4 V, + 22 V | 5.6 V | 172 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 72 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 131 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 72 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 131 nC | - 55 C | + 175 C | 339 W | Enhancement | ||||||
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 68 A | 45 mOhms | - 6 V, + 22 V | 4 V | 189 nC | - 55 C | + 175 C | Enhancement | |||||||
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Not Available Online | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 17 A | 160 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | - 55 C | + 175 C | 103 W | Enhancement | ||||||
Not Available Online | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | ||||||
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 40 A | 80 mOhms | - 6 V, + 22 V | 4 V | 106 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 22 A | 160 mOhms | - 6 V, + 22 V | 4 V | 62 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 70 A | 30 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 650 V | 93 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | SMD/SMT | DIE | N-Channel | 1 Channel | 1.2 kVAC | 95 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | Enhancement | |||||||
Not Available Online | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 118 A | 17 mOhms | - 4 V, + 22 V | 5.6 V | 172 nC | - 55 C | + 175 C | 427 W | Enhancement | ||||||
Not Available Online | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 95 A | 22 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | 427 W | Enhancement |
