N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: 2N7002NXAKR TTI: 2N7002NXAKR Nexperia Availability: 6,177,000In StockMOSFETs 2N7002NXAK/SOT23/TO-236AB | 6,177,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 4.5 Ohms | 20 V | 1.1 V | 330 pC | - 55 C | + 150 C | 325 mW | Enhancement | Reel | 934661281215 | ||||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,500In Stock6,850 On Order Expected MOSFETs TO220 1KV 3.1A N-CH MOSFET | 1,500In Stock6,850 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 84,000In Stock42,000 On Order Expected 28-Feb-28 MOSFETs 20V Vds 8V Vgs SOT-23 | 84,000In Stock42,000 On Order Expected 28-Feb-28 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
43,800In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
7,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF-BE3 IRF520SPBF | |||||
Mfr: T2N7002BK,LM TTI: T2N7002BK,LM Toshiba Availability: 72,000In Stock6,000 On Order Expected 21-Dec-26 MOSFETs Small Signal Mosfet | 72,000In Stock6,000 On Order Expected 21-Dec-26 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.5 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: IRFBG30PBF-BE3 TTI: IRFBG30PBF-BE3 Vishay / Siliconix Availability: 14,100In StockMOSFETs TO220 1KV 3.1A N-CH MOSFET | 14,100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF | ||||
900In Stock1,000 On Order Expected 10-Sep-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF620PBF-BE3 | |||||
Mfr: SI1416EDH-T1-GE3 TTI: SI1416EDH-T1-GE3 Vishay Semiconductors Availability: 96,000In Stock132,000 On Order Expected MOSFETs 30V Vds 12V Vgs SC70-6 | 96,000In Stock132,000 On Order Expected | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-BE3 SI1410EDH-T1-E3-S SI1410EDH-T1-GE3 SI1426DH-T1-E3-S | |||
3,850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF-BE3 SIHF740-E3 | |||||
Mfr: IRF640PBF-BE3 TTI: IRF640PBF-BE3 Vishay / Siliconix Availability: 29,300In StockMOSFETs TO220 200V 18A N-CH MOSFET | 29,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 4 V | 7 nC | - 55 C | + 150 C | 125 mW | Enhancement | Tube | IRF640PBF | ||||
Mfr: IRFP264PBF TTI: IRFP264PBF Vishay Semiconductors Availability: 11,800In StockMOSFETs TO247 250V 38A N-CH MOSFET | 11,800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 38 A | 75 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI4214DDY-T1-GE3 TTI: SI4214DDY-T1-GE3 Vishay Semiconductors Availability: 50,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 50,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | 20 V | 1.2 V | 14.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4920DY-T1-E3-S | |||
Mfr: IRFP460APBF TTI: IRFP460APBF Vishay Semiconductors Availability: 1,550In Stock1,600 On Order Expected 15-Sep-26 MOSFETs TO247 500V 20A N-CH MOSFET | 1,550In Stock1,600 On Order Expected 15-Sep-26 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 30 V | 2 V | 105 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRFL110TRPBF-BE3 TTI: IRFL110TRPBF-BE3 Vishay / Siliconix Availability: 47,500In StockMOSFETs SOT223 100V 1.5A N-CH MOSFET | 47,500In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL110TRPBF | ||||
1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: IRFP250PBF TTI: IRFP250PBF Vishay Semiconductors Availability: 7,600In StockMOSFETs TO247 200V 30A N-CH MOSFET | 7,600In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI4134DY-T1-GE3 TTI: SI4134DY-T1-GE3 Vishay Semiconductors Availability: 7,500In Stock5,000 On Order Expected 30-Sep-26 MOSFETs 30V Vds 20V Vgs SO-8 | 7,500In Stock5,000 On Order Expected 30-Sep-26 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-GE3 | |||
Mfr: IRFP450PBF TTI: IRFP450PBF Vishay Semiconductors Availability: 3,800In StockMOSFETs TO247 500V 14A N-CH MOSFET | 3,800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
1,350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830PBF-BE3 SIHF830-E3 | |||||
Mfr: IRF830PBF-BE3 TTI: IRF830PBF-BE3 Vishay / Siliconix Availability: 650In Stock3,000 On Order Expected 10-Nov-26 MOSFETs TO220 500V 4.5A N-CH MOSFET | 650In Stock3,000 On Order Expected 10-Nov-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830PBF | ||||
Mfr: RE1C002UNTCL TTI: RE1C002UNTCL ROHM Semiconductor Availability: 84,000In Stock279,000 On Order Expected 16-Dec-26 MOSFETs 1.2V Drive Nch MOSFET | 84,000In Stock279,000 On Order Expected 16-Dec-26 | Si | SMD/SMT | SOT-416FL-3 | N-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RE1C002UN | |||||
Mfr: IRFL110TRPBF TTI: IRFL110TRPBF Vishay Semiconductors Availability: 40,000In StockMOSFETs N-Chan 100V 1.5 Amp | 40,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 | ||||
Mfr: IRFR420PBF TTI: IRFR420PBF Vishay Semiconductors Availability: 47,175In StockMOSFETs TO252 500V 3.3A N-CH MOSFET | 47,175In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 2 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFP150PBF TTI: IRFP150PBF Vishay Semiconductors Availability: 1,950In StockMOSFETs TO247 100V 41A N-CH MOSFET | 1,950In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube |