Si - MOSFETs
17,626 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: 2N7002NXAKR TTI: 2N7002NXAKR Nexperia Availability: 6,177,000In StockMOSFETs 2N7002NXAK/SOT23/TO-236AB | 6,177,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 4.5 Ohms | 20 V | 1.1 V | 330 pC | - 55 C | + 150 C | 325 mW | Enhancement | Reel | 934661281215 | ||||
135,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.5 A | 55 mOhms | 12 V | 750 mV | 11 nC | - 55 C | + 150 C | 930 mW | Enhancement | Reel | 934065361215 | |||||
7,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF-BE3 IRF520SPBF | |||||
Mfr: T2N7002BK,LM TTI: T2N7002BK,LM Toshiba Availability: 72,000In Stock6,000 On Order Expected 21-Dec-26 MOSFETs Small Signal Mosfet | 72,000In Stock6,000 On Order Expected 21-Dec-26 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.5 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 4,650In Stock3,650 On Order Expected 08-Sep-26 MOSFETs TO220 200V 11A P-CH MOSFET | 4,650In Stock3,650 On Order Expected 08-Sep-26 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 84,000In Stock42,000 On Order Expected 28-Feb-28 MOSFETs 20V Vds 8V Vgs SOT-23 | 84,000In Stock42,000 On Order Expected 28-Feb-28 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
43,800In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: SUM90P10-19L-E3 TTI: SUM90P10-19L-E3 Vishay Semiconductors Availability: 22,400In StockMOSFETs 100V 90A 375W 19mohm @ 10V | 22,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 90 A | 19 mOhms | 20 V | 1 V | 217 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,500In Stock6,850 On Order Expected MOSFETs TO220 1KV 3.1A N-CH MOSFET | 1,500In Stock6,850 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: IRFS9N60APBF TTI: IRFS9N60APBF Vishay Semiconductors Availability: 3,250In StockMOSFETs TO263 600V 9.2A N-CH MOSFET | 3,250In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | |||||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs -60V Vds 20V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
Mfr: SSM3J328R,LF TTI: SSM3J328R,LF Toshiba Availability: 6,000In Stock90,000 On Order Expected 23-Nov-26 MOSFETs P-Ch Sm Sig FET Id -6A -20V -8VGSS | 6,000In Stock90,000 On Order Expected 23-Nov-26 | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 29.8 mOhms | 8 V | 300 mV | 12.8 nC | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | |||||
Mfr: IRF520PBF-BE3 TTI: IRF520PBF-BE3 Vishay / Siliconix Availability: 800In Stock4,000 On Order Expected 18-Aug-27 MOSFETs TO220 100V 9.2A N-CH MOSFET | 800In Stock4,000 On Order Expected 18-Aug-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF520PBF | ||||
Mfr: IRF9640STRLPBF TTI: IRF9640STRLPBF Vishay Semiconductors Availability: 3,200In Stock2,400 On Order Expected 19-Oct-26 MOSFETs TO263 200V 11A P-CH MOSFET | 3,200In Stock2,400 On Order Expected 19-Oct-26 | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: IRFP250PBF TTI: IRFP250PBF Vishay Semiconductors Availability: 7,600In StockMOSFETs TO247 200V 30A N-CH MOSFET | 7,600In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI4134DY-T1-GE3 TTI: SI4134DY-T1-GE3 Vishay Semiconductors Availability: 7,500In Stock5,000 On Order Expected 30-Sep-26 MOSFETs 30V Vds 20V Vgs SO-8 | 7,500In Stock5,000 On Order Expected 30-Sep-26 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-GE3 | |||
Mfr: IRF9Z34PBF TTI: IRF9Z34PBF Vishay Semiconductors Availability: 13,450In StockMOSFETs TO220 P-CH 60V 18A | 13,450In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF-BE3 | ||||
Mfr: IRFP450PBF TTI: IRFP450PBF Vishay Semiconductors Availability: 3,800In StockMOSFETs TO247 500V 14A N-CH MOSFET | 3,800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI4925DDY-T1-GE3 TTI: SI4925DDY-T1-GE3 Vishay Semiconductors Availability: 70,000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 70,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 8 A | 29 mOhms | 20 V | 1 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4925DDY-GE3 | |||
Mfr: SSM3K339R,LF TTI: SSM3K339R,LF Toshiba Availability: 3,000In Stock81,000 On Order Expected MOSFETs Small Signal MOSFET | 3,000In Stock81,000 On Order Expected | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 40 V | 2 A | 185 mOhms | 8 V | 850 mV | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | ||||||
Mfr: T2N7002AK,LM TTI: T2N7002AK,LM Toshiba Availability: 12,000In Stock9,000 On Order Expected 23-Nov-26 MOSFETs Small-signal MOSFET | 12,000In Stock9,000 On Order Expected 23-Nov-26 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 200 mA | 3.9 Ohms | 20 V | 1.1 V | 270 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: RUC002N05HZGT116 TTI: RUC002N05HZGT116 ROHM Semiconductor Availability: 123,000In StockMOSFETs Nch 50V Vds 0.2A 2.4Rds(on) SOT-23 | 123,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 1 V | - 55 C | + 150 C | 350 mW | Enhancement | AEC-Q101 | Reel | RUC002N05HZG | ||||
Mfr: IRFL9014TRPBF TTI: IRFL9014TRPBF Vishay Semiconductors Availability: 2,500In Stock37,500 On Order Expected MOSFETs P-Chan 60V 1.1 Amp | 2,500In Stock37,500 On Order Expected | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 60 V | 1.8 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL9014TRPBF-BE3 | ||||
Mfr: IRF540STRLPBF TTI: IRF540STRLPBF Vishay Semiconductors Availability: 74,400In StockMOSFETs TO263 100V 28A N-CH MOSFET | 74,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Reel |