N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFBE20PBF TTI: IRFBE20PBF Vishay Semiconductors Availability: 450In StockMOSFETs TO220 800V 1.8A N-CH MOSFET | 450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBE20PBF-BE3 | ||||
Mfr: IRFP450APBF TTI: IRFP450APBF Vishay Semiconductors Availability: 700In StockMOSFETs TO247 500V 14A N-CH MOSFET | 700In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 62 A | 33 mOhms | 20 V | 5.5 V | 70 nC | - 55 C | + 175 C | 350 W | Enhancement | PolarHT | Tube | |||||
Mfr: SI4162DY-T1-GE3 TTI: SI4162DY-T1-GE3 Vishay Semiconductors Availability: 40,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 40,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 19.3 A | 7.9 mOhms | 20 V | 3 V | 20 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4162DY-GE3 | |||
Mfr: SSM3K72CFS,LF TTI: SSM3K72CFS,LF Toshiba Availability: 3,000In StockMOSFETs Small-signal Nch MOSFET ID: 0.15A | 3,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 60 V | 170 mA | 2.8 Ohms | 20 V | 1.1 V | 350 pC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SI4058DY-T1-GE3 TTI: SI4058DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 100V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 10.3 A | 26 mOhms | 20 V | 1.2 V | 12 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | |||||
Mfr: SIR668ADP-T1-RE3 TTI: SIR668ADP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 93.6 A | 4 mOhms | 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR622DP-T1-RE3 TTI: SIR622DP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 150V Vds; 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | 20 V | 2.5 V | 41 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: IRF630PBF-BE3 TTI: IRF630PBF-BE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs TO220 200V 9A N-CH MOSFET | 2,500In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | 20 V | 4 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF630PBF | ||||
Mfr: SIHG17N80AE-GE3 TTI: SIHG17N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO247 800V 15A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
Mfr: SISS42LDN-T1-GE3 TTI: SISS42LDN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 100 V | 39 A | 14.9 mOhms | 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHB24N80AE-GE3 TTI: SIHB24N80AE-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 2,000In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 800 V | 21 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
Mfr: SI2300DS-T1-BE3 TTI: SI2300DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 N-CH 30V 3.1A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2300DS-T1-GE3 | ||||
Mfr: SIR104LDP-T1-RE3 TTI: SIR104LDP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 100 V | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
Mfr: SI3474DV-T1-BE3 TTI: SI3474DV-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs TSOP6 100V 3.8A N-CH MOSFET | 9,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 3.8 A | 126 mOhms | 20 V | 1.2 V | 2.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3474DV-T1-GE3 | ||||
Mfr: IRLI640GPBF TTI: IRLI640GPBF Vishay Semiconductors Availability: 2,600In StockMOSFETs TO220 200V 9.9A N-CH MOSFET | 2,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.9 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SIHP22N60AE-BE3 TTI: SIHP22N60AE-BE3 Vishay / Siliconix Availability: 2,750In StockMOSFETs TO220 600V 20A N-CH MOSFET | 2,750In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 156 mOhms | 30 V | 4 V | 96 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | SIHP22N60AE-GE3 | ||||
280In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 15 Ohms | 30 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | ||||||
Mfr: RQ6C050UNTR TTI: RQ6C050UNTR ROHM Semiconductor Availability: 3,000In StockMOSFETs 1.5V Drive Nch MOSFET | 3,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 20 V | 5 A | 30 mOhms | 10 V | 1 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6C050UN | ||||
Mfr: BUK7Y28-75B,115 TTI: BUK7Y28-75B,115 Nexperia Availability: 9,000In StockMOSFETs BUK7Y28-75B/SOT669/LFPAK | 9,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 35.5 A | 23 mOhms | 20 V | 2 V | 21.2 nC | - 55 C | + 175 C | 85 W | Enhancement | Reel | 934063303115 | ||||
Mfr: IXFK64N60P3 TTI: IXFK64N60P3 IXYS Availability: 25In StockMOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET | 25In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | 30 V | 5 V | 145 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IRL510PBF-BE3 TTI: IRL510PBF-BE3 Vishay / Siliconix Availability: 200In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRL510PBF | ||||
Mfr: IRFBC40APBF TTI: IRFBC40APBF Vishay Semiconductors Availability: 50In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 50In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 4 V | 42 nC | - 55 C | + 150 C | 96 W | Enhancement | Tube | IRFBC40APBF-BE3 | ||||
2,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 10 V | 2 V | 66 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRLZ44PBF-BE3 | |||||
Mfr: TPH1R306P1,L1Q TTI: TPH1R306P1,L1Q Toshiba Availability: 10,000In StockMOSFETs SOP8-ADV PD=170W 1MHz PWR MOSFET TRNS | 10,000In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.3 mOhms | 20 V | 2.5 V | 91 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel |