Si - MOSFETs
17,626 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-GE3 | ||||
Mfr: SIR606DP-T1-GE3 TTI: SIR606DP-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 37 A | 16.2 mOhms | 20 V | 2.4 V | 36.5 nC | - 55 C | + 150 C | 44.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI9407BDY-T1-E3 TTI: SI9407BDY-T1-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -60V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 100 mOhms | 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-E3 | |||
Mfr: BSS138BKT116 TTI: BSS138BKT116 ROHM Semiconductor Availability: 12,000In StockMOSFETs SOT23 N-CH 60V .4A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 680 mOhms | 20 V | 2 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | BSS138BK | |||||
Mfr: SIA432DJ-T1-GE3 TTI: SIA432DJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 20 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA432DJ-GE3 | |||
Mfr: SI6423DQ-T1-GE3 TTI: SI6423DQ-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 12,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 1 Channel | 12 V | 9.5 A | 8.5 mOhms | 8 V | 400 mV | 110 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI6423DQ-GE3 | |||
Mfr: TK8R2A06PL,S4X TTI: TK8R2A06PL,S4X Toshiba Availability: 800In StockMOSFETs N-Ch 60V 1990pF 29nC 50A 34W | 800In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 6.1 mOhms | 20 V | 1.5 V | 28.3 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: BSS670AHZGT116 TTI: BSS670AHZGT116 ROHM Semiconductor Availability: 21,000In StockMOSFETs SOT23 N-CH 60V .65A | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 650 mA | 680 mOhms | 20 V | 2 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | ||||||
Mfr: SIRA52ADP-T1-RE3 TTI: SIRA52ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 131 A | 1.63 mOhms | - 16 V, 20 V | 1.1 V | 100 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFPC60LCPBF TTI: IRFPC60LCPBF Vishay Semiconductors Availability: 425In StockMOSFETs TO247 600V 16A N-CH MOSFET | 425In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 16 A | 400 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI7108DN-T1-E3 TTI: SI7108DN-T1-E3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 20V 22A 0.0049Ohm | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-E3 | |||
Mfr: RHP020N06T100 TTI: RHP020N06T100 ROHM Semiconductor Availability: 6,000In StockMOSFETs N-CH 60V 200MA | 6,000In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 2 A | 200 mOhms | 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RHP020N06 | ||||
Mfr: SI2303CDS-T1-BE3 TTI: SI2303CDS-T1-BE3 Vishay / Siliconix Availability: 84,000In StockMOSFETs SOT23 P-CH 30V 1.9A | 84,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 | ||||
Mfr: SIJ470DP-T1-GE3 TTI: SIJ470DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V 9.1mOhm@10V 58.8A N-CH | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 100 V | 58.8 A | 7.6 mOhms | 20 V | 2.3 V | 56 nC | - 55 C | + 150 C | 56.8 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: RSR020N06HZGTL TTI: RSR020N06HZGTL ROHM Semiconductor Availability: 60,000In StockMOSFETs SOT346 N-CH 60V 2A | 60,000In Stock | Si | SMD/SMT | SOT-346T-3 | N-Channel | 1 Channel | 60 V | 2 A | 170 mOhms | 20 V | 2.5 V | 2.7 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | RSR020N06HZG | |||
Mfr: SI1553CDL-T1-BE3 TTI: SI1553CDL-T1-BE3 Vishay / Siliconix Availability: 54,000In StockMOSFETs SOT363 NPCH 20V .7A | 54,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-GE3 | |||
Mfr: SIA483ADJ-T1-GE3 TTI: SIA483ADJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SC70 P-CH 30V 10.6A | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | - 20 V, 16 V | 5 V | 17 nC | - 55 C | + 150 C | 17.9 W | Enhancement | TrenchFET | Reel | ||||
400In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube | ||||||
Mfr: SIHD7N60E-GE3 TTI: SIHD7N60E-GE3 Vishay / Siliconix Availability: 2,950In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 2,950In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | 30 V | 4 V | 20 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: IRF740APBF TTI: IRF740APBF Vishay Semiconductors Availability: 150In StockMOSFETs TO220 400V 10A N-CH MOSFET | 150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740APBF-BE3 | ||||
Mfr: IRFI9640GPBF TTI: IRFI9640GPBF Vishay Semiconductors Availability: 700In StockMOSFETs TO220 200V 6.1A P-CH MOSFET | 700In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.1 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: IXFH50N60P3 TTI: IXFH50N60P3 IXYS Availability: 30In StockMOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 50 A | 145 mOhms | 30 V | 5 V | 94 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
140In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | ||||||
Mfr: SI5935CDC-T1-GE3 TTI: SI5935CDC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | 8 V | 400 mV | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-GE3 SIR814DP-T1-GE3 | |||
Mfr: SI7137DP-T1-GE3 TTI: SI7137DP-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.95 mOhms | 12 V | 1.4 V | 390 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7137DP-GE3 |