MOSFETs
18,332 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHB24N65E-GE3 TTI: SIHB24N65E-GE3 Vishay / Siliconix Availability: 1,650In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 1,650In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 700 V | 24 A | 145 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
140In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | - 20 V, 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | ||||||
Mfr: BSS670AHZGT116 TTI: BSS670AHZGT116 ROHM Semiconductor Availability: 21,000In StockMOSFETs SOT23 N-CH 60V .65A | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 650 mA | 680 mOhms | - 20 V, 20 V | 2 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | ||||||
Mfr: SIA910EDJ-T1-GE3 TTI: SIA910EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 12 V | 4.5 A | 28 mOhms | - 8 V, 8 V | 400 mV | 16 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA910EDJ-GE3 | |||
Mfr: RU1C002ZPTCL TTI: RU1C002ZPTCL ROHM Semiconductor Availability: 3,000In StockMOSFETs 4V Drive Pch MOSFET Drive Pch | 3,000In Stock | Si | SMD/SMT | SOT-323FL-3 | P-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | - 10 V, 10 V | 1 V | 1.4 nC | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RU1C002ZP | ||||
Mfr: IXFP22N65X2 TTI: IXFP22N65X2 IXYS Availability: 100In StockMOSFETs MOSFET 650V/22A Ultra Junction X2 | 100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SISA14DN-T1-GE3 TTI: SISA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs For New Design See: 78-SISHA14DN-T1-GE3 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR626DP-T1-RE3 TTI: SIR626DP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 100 A | 1.4 mOhms | - 20 V, 20 V | 3.5 V | 102 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: TK8R2A06PL,S4X TTI: TK8R2A06PL,S4X Toshiba Availability: 100In StockMOSFETs N-Ch 60V 1990pF 29nC 50A 34W | 100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 6.1 mOhms | - 20 V, 20 V | 1.5 V | 28.3 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: IXFH50N60P3 TTI: IXFH50N60P3 IXYS Availability: 30In StockMOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 50 A | 145 mOhms | - 30 V, 30 V | 5 V | 94 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: SSM6N813R,LXHF TTI: SSM6N813R,LXHF Toshiba Availability: 42,000In StockMOSFETs AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F | 42,000In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 2 Channel | 100 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 2.5 V | 3.6 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6N813R,LXHF(B | ||||
Mfr: BSS138BKT116 TTI: BSS138BKT116 ROHM Semiconductor Availability: 3,000In StockMOSFETs SOT23 N-CH 60V .4A | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 680 mOhms | - 20 V, 20 V | 2 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | BSS138BK | |||||
Mfr: IRFB11N50APBF-BE3 TTI: IRFB11N50APBF-BE3 Vishay / Siliconix Availability: 2,650In StockMOSFETs TO220 500V 11A N-CH MOSFET | 2,650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | - 30 V, 30 V | 4 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB11N50APBF | ||||
Mfr: SIA483ADJ-T1-GE3 TTI: SIA483ADJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SC70 P-CH 30V 10.6A | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | - 20 V, 16 V | 5 V | 17 nC | - 55 C | + 150 C | 17.9 W | Enhancement | TrenchFET | Reel | ||||
150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 48 A | 65 mOhms | - 30 V, 30 V | 3 V | 76 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI2333CDS-T1-BE3 TTI: SI2333CDS-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SOT23 P-CH 12V 5.1A | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 7.1 A | 35 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2333CDS-T1-E3 | ||||
Mfr: IRF9Z34PBF-BE3 TTI: IRF9Z34PBF-BE3 Vishay / Siliconix Availability: 1,450In StockMOSFETs TO220 P-CH 60V 18A | 1,450In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF | ||||
Mfr: SI1553CDL-T1-BE3 TTI: SI1553CDL-T1-BE3 Vishay / Siliconix Availability: 54,000In StockMOSFETs SOT363 NPCH 20V .7A | 54,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | - 12 V, 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-GE3 | |||
Mfr: SUM40014M-GE3 TTI: SUM40014M-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TO263 N-CH 40V 200A | 12,000In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 40 V | 200 A | 990 uOhms | - 20 V, 20 V | 2.4 V | 182 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SI1424EDH-T1-BE3 TTI: SI1424EDH-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT363 N-CH 20V 4A | 12,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 20 V | 4 A | 33 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1424EDH-T1-GE3 | |||
Mfr: SIA449DJ-T1-GE3 TTI: SIA449DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | P-Channel | 1 Channel | 30 V | 12 A | 15.5 mOhms | - 12 V, 12 V | 1.5 V | 72 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1077X-T1-GE3 TTI: SI1077X-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -20V Vds 8V Vgs SC89-6 | 18,000In Stock | Si | SMD/SMT | SC-89-6 | P-Channel | 1 Channel | 20 V | 1.75 A | 65 mOhms | - 8 V, 8 V | 1 V | 31.1 nC | - 55 C | + 150 C | 330 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: IXFH30N50Q3 TTI: IXFH30N50Q3 IXYS Availability: 150In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 30 V, 30 V | 3.5 V | 62 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SI4463CDY-T1-GE3 TTI: SI4463CDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -20V Vds 12V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 18.6 A | 8 mOhms | - 12 V, 12 V | 600 mV | 108 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG22N60E-GE3 TTI: SIHG22N60E-GE3 Vishay Semiconductors Availability: 3,850In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 3,850In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube |
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