MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF740APBF TTI: IRF740APBF Vishay Semiconductors Availability: 150In StockMOSFETs TO220 400V 10A N-CH MOSFET | 150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 30 V, 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740APBF-BE3 | ||||
Mfr: IRFI644GPBF TTI: IRFI644GPBF Vishay Semiconductors Availability: 200In StockMOSFETs TO220 250V 7.9A N-CH MOSFET | 200In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 7.9 A | 280 mOhms | - 20 V, 20 V | 2 V | 68 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: IXTT20P50P TTI: IXTT20P50P IXYS Availability: 30In Stock300 On Order Expected 31-Aug-26 MOSFETs -20.0 Amps -500V 0.450 Rds | 30In Stock300 On Order Expected 31-Aug-26 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 20 A | 450 mOhms | - 20 V, 20 V | 2 V | 103 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarP | Tube | ||||
Mfr: SI4564DY-T1-GE3 TTI: SI4564DY-T1-GE3 Vishay Semiconductors Availability: 17,500In StockMOSFETs SO8 NPCH 40V 10A | 17,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 9.2 A, 10 A | 17.5 mOhms, 21 mOhms | - 20 V, 20 V | 800 mV, 1.2 V | 20.5 nC, 41.5 nC | - 55 C | + 150 C | 3.1 W, 3.2 W | Enhancement | TrenchFET | Reel | SI4542DY-T1-E3-S | |||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 2,900In StockMOSFETs TO220 600V 9.2A N-CH MOSFET | 2,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
Mfr: BSS138BKT116 TTI: BSS138BKT116 ROHM Semiconductor Availability: 3,000In StockMOSFETs SOT23 N-CH 60V .4A | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 680 mOhms | - 20 V, 20 V | 2 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | BSS138BK | |||||
Mfr: SSM6N813R,LXHF TTI: SSM6N813R,LXHF Toshiba Availability: 12,000In StockMOSFETs AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F | 12,000In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 2 Channel | 100 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 2.5 V | 3.6 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6N813R,LXHF(B | ||||
Mfr: SI2303CDS-T1-BE3 TTI: SI2303CDS-T1-BE3 Vishay / Siliconix Availability: 84,000In StockMOSFETs SOT23 P-CH 30V 1.9A | 84,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 | ||||
Mfr: IRFI9640GPBF TTI: IRFI9640GPBF Vishay Semiconductors Availability: 700In StockMOSFETs TO220 200V 6.1A P-CH MOSFET | 700In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.1 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: IRF9Z34PBF-BE3 TTI: IRF9Z34PBF-BE3 Vishay / Siliconix Availability: 1,450In StockMOSFETs TO220 P-CH 60V 18A | 1,450In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF | ||||
Mfr: SUM40014M-GE3 TTI: SUM40014M-GE3 Vishay / Siliconix Availability: 9,600In StockMOSFETs TO263 N-CH 40V 200A | 9,600In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 40 V | 200 A | 990 uOhms | - 20 V, 20 V | 2.4 V | 182 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 48 A | 65 mOhms | - 30 V, 30 V | 3 V | 76 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SUP85N10-10-GE3 TTI: SUP85N10-10-GE3 Vishay / Siliconix Availability: 550In StockMOSFETs 100V 85A 250W 10.5mohm @ 10V | 550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 85 A | 8.5 mOhms | - 20 V, 20 V | 1 V | 160 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
140In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | - 20 V, 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | ||||||
Mfr: IRFP9240PBF TTI: IRFP9240PBF Vishay Semiconductors Availability: 1,950In StockMOSFETs TO247 200V 12A P-CH MOSFET | 1,950In Stock | Si | Through Hole | TO-247AC-3 | P-Channel | 1 Channel | 200 V | 12 A | 500 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: RU1C002ZPTCL TTI: RU1C002ZPTCL ROHM Semiconductor Availability: 3,000In StockMOSFETs 4V Drive Pch MOSFET Drive Pch | 3,000In Stock | Si | SMD/SMT | SOT-323FL-3 | P-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | - 10 V, 10 V | 1 V | 1.4 nC | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RU1C002ZP | ||||
Mfr: SISA14DN-T1-GE3 TTI: SISA14DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs For New Design See: 78-SISHA14DN-T1-GE3 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IXFP22N65X2 TTI: IXFP22N65X2 IXYS Availability: 100In StockMOSFETs MOSFET 650V/22A Ultra Junction X2 | 100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: TK8R2A06PL,S4X TTI: TK8R2A06PL,S4X Toshiba Availability: 100In StockMOSFETs N-Ch 60V 1990pF 29nC 50A 34W | 100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 6.1 mOhms | - 20 V, 20 V | 1.5 V | 28.3 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SI6423DQ-T1-GE3 TTI: SI6423DQ-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 12,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 1 Channel | 12 V | 9.5 A | 8.5 mOhms | - 8 V, 8 V | 400 mV | 110 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI6423DQ-GE3 | |||
Mfr: IRFB11N50APBF-BE3 TTI: IRFB11N50APBF-BE3 Vishay / Siliconix Availability: 2,650In StockMOSFETs TO220 500V 11A N-CH MOSFET | 2,650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | - 30 V, 30 V | 4 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB11N50APBF | ||||
Mfr: IXFH50N60P3 TTI: IXFH50N60P3 IXYS Availability: 30In StockMOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 50 A | 145 mOhms | - 30 V, 30 V | 5 V | 94 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
2,100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 14 mOhms | - 20 V, 20 V | 2.5 V | 60 nC | - 55 C | + 175 C | 230 W | Enhancement | HiPerFET | Tube | |||||
Mfr: RHP020N06T100 TTI: RHP020N06T100 ROHM Semiconductor Availability: 6,000In StockMOSFETs N-CH 60V 200MA | 6,000In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 2 A | 200 mOhms | - 20 V, 20 V | 2.5 V | 7 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RHP020N06 | ||||
Mfr: SI4204DY-T1-GE3 TTI: SI4204DY-T1-GE3 Vishay Semiconductors Availability: 22,500In StockMOSFETs 20V Vds 20V Vgs SO-8 | 22,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 19.8 A | 4.6 mOhms | - 20 V, 20 V | 1 V | 30 nC | - 55 C | + 150 C | 3.25 W | Enhancement | TrenchFET | Reel | SI4204DY-GE3 |
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