MOSFETs
18,730 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFP450LCPBF TTI: IRFP450LCPBF Vishay Semiconductors Availability: 250In StockMOSFETs TO247 500V 14A N-CH MOSFET | 250In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 30 V | 2 V | 74 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRFBC40ASPBF TTI: IRFBC40ASPBF Vishay Semiconductors Availability: 5,850In StockMOSFETs N-Chan 600V 6.2 Amp | 5,850In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 16 A | 80 mOhms | 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||||
60In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | 20 V | 2 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||||
Mfr: SI2347DS-T1-GE3 TTI: SI2347DS-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2347DS-T1-BE3 | |||
Mfr: SIRA18DP-T1-GE3 TTI: SIRA18DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 33 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1401EDH-T1-BE3 TTI: SI1401EDH-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT363 P-CH 12V 4A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-GE3 | |||
Mfr: IRFR9024PBF-BE3 TTI: IRFR9024PBF-BE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 60V 8.8A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SIR470DP-T1-GE3 TTI: SIR470DP-T1-GE3 Vishay Semiconductors Availability: 48,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 48,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.9 mOhms | 20 V | 1 V | 155 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR814DP-T1-GE3 | |||
Mfr: SI7633DP-T1-GE3 TTI: SI7633DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 5.5 mOhms | 20 V | 3 V | 260 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7633DP-GE3 | |||
Mfr: SIS454DN-T1-GE3 TTI: SIS454DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 35 A | 3.7 mOhms | 20 V | 1 V | 53 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS454DN-GE3 | |||
Mfr: SI7143DP-T1-GE3 TTI: SI7143DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 35 A | 10 mOhms | 20 V | 2.8 V | 47.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | SI7143DP-GE3 | |||
90In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 7.3 Ohms | 30 V | 2.5 V | 38.6 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: SISA04DN-T1-GE3 TTI: SISA04DN-T1-GE3 Vishay Semiconductors Availability: 30,000In StockMOSFETs For New Design See: 78-SISHA04DN-T1-GE3 | 30,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SISA04DN-GE3 | |||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.2 kV | 12 A | 2 Ohms | 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | ||||||
Mfr: RTR030P02HZGTL TTI: RTR030P02HZGTL ROHM Semiconductor Availability: 15,000In Stock3,000 On Order Expected 04-Jan-27 MOSFETs SOT346 P-CH 20V 3A | 15,000In Stock3,000 On Order Expected 04-Jan-27 | Si | SMD/SMT | SOT-346T-3 | P-Channel | 1 Channel | 20 V | 3 A | 75 mOhms | 12 V | 2 V | 9.3 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | RTR030P02HZG | |||
Mfr: SIR5108DP-T1-RE3 TTI: SIR5108DP-T1-RE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SO8 100V 55.9A N CHAN | 9,000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 100 V | 55.9 A | 10.5 mOhms | 20 V | 4 V | 14.8 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | |||||
Mfr: IRFR014TRLPBF-BE3 TTI: IRFR014TRLPBF-BE3 Vishay / Siliconix Availability: 54,000In StockMOSFETs TO252 N-CH 60V 7.7A | 54,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR014TRLPBF | ||||
Mfr: SI4842BDY-T1-E3 TTI: SI4842BDY-T1-E3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 30V 23A 3.5W | 15,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-E3 | |||
Mfr: IRF740PBF-BE3 TTI: IRF740PBF-BE3 Vishay / Siliconix Availability: 7,000In StockMOSFETs TO220 400V 10A N-CH MOSFET | 7,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF | ||||
Mfr: IRFPE50PBF TTI: IRFPE50PBF Vishay Semiconductors Availability: 100In StockMOSFETs TO247 800V 7.8A N-CH MOSFET | 100In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 7.8 A | 1.2 Ohms | 20 V | 2 V | 200 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRFR9310PBF TTI: IRFR9310PBF Vishay Semiconductors Availability: 1,875In StockMOSFETs P-Chan 400V 1.8 Amp | 1,875In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: IRFU320PBF TTI: IRFU320PBF Vishay Semiconductors Availability: 300In StockMOSFETs N-Chan 400V 3.1 Amp | 300In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFU110PBF TTI: IRFU110PBF Vishay Semiconductors Availability: 3,900In StockMOSFETs TO251 100V 4.3A N-CH MOSFET | 3,900In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFU9120PBF TTI: IRFU9120PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs P-Chan 100V 5.6 Amp | 3,000In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube |