N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFR310PBF TTI: IRFR310PBF Vishay Semiconductors Availability: 300In StockMOSFETs N-Chan 400V 1.7 Amp | 300In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SI4162DY-T1-GE3 TTI: SI4162DY-T1-GE3 Vishay Semiconductors Availability: 40,000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 40,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 19.3 A | 7.9 mOhms | 20 V | 3 V | 20 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4162DY-GE3 | |||
Mfr: IXFH30N50Q3 TTI: IXFH30N50Q3 IXYS Availability: 150In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | 30 V | 3.5 V | 62 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SI2300DS-T1-BE3 TTI: SI2300DS-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SOT23 N-CH 30V 3.1A | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2300DS-T1-GE3 | ||||
Mfr: SI7116DN-T1-GE3 TTI: SI7116DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 16.4 A | 7.8 mOhms | 20 V | 2.5 V | 15 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7116DN-GE3 | |||
Mfr: IRLI640GPBF TTI: IRLI640GPBF Vishay Semiconductors Availability: 2,600In StockMOSFETs TO220 200V 9.9A N-CH MOSFET | 2,600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.9 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SI3474DV-T1-BE3 TTI: SI3474DV-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs TSOP6 100V 3.8A N-CH MOSFET | 9,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 3.8 A | 126 mOhms | 20 V | 1.2 V | 2.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3474DV-T1-GE3 | ||||
Mfr: SI7106DN-T1-GE3 TTI: SI7106DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-GE3 | |||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
Mfr: SIHG47N60E-GE3 TTI: SIHG47N60E-GE3 Vishay / Siliconix Availability: 8,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 8,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 36 A | 45 mOhms | 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||||
270In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1.5 kV | 1.83 A | 7.3 Ohms | 30 V | 2.5 V | - 55 C | + 150 C | 73 W | Tube | |||||||||
Mfr: IRF740APBF-BE3 TTI: IRF740APBF-BE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 400V 10A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740APBF | ||||
180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2 A | 15 Ohms | 30 V | 6 V | 72 nC | - 55 C | + 150 C | 290 W | Enhancement | Linear | Tube | |||||
Mfr: IRFZ44PBF-BE3 TTI: IRFZ44PBF-BE3 Vishay / Siliconix Availability: 2,300In StockMOSFETs TO220 N-CH 60V 50A | 2,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF | ||||
Mfr: SISS26DN-T1-GE3 TTI: SISS26DN-T1-GE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8S | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 60 V | 60 A | 3.7 mOhms | 20 V | 3.6 V | 24.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR800DP-T1-GE3 TTI: SIR800DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 50 A | 2.3 mOhms | 12 V | 600 mV | 133 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR800DP-GE3 | |||
450In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 160 A | 19 mOhms | 20 V | 5 V | 335 nC | - 55 C | + 150 C | 1.39 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: PSMN8R3-40YS,115 TTI: PSMN8R3-40YS,115 Nexperia Availability: 1,500In StockMOSFETs PSMN8R3-40YS/SOT669/LFPAK | 1,500In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 40 V | 70 A | 8.3 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 175 C | 74 W | Enhancement | Reel | 934063936115 | ||||
Mfr: IRFP048PBF TTI: IRFP048PBF Vishay Semiconductors Availability: 475In StockMOSFETs TO247 N-CH 60V 70A | 475In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 18 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Tube | |||||
500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 600 mA | 34 Ohms | 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 52 A | 73 mOhms | 20 V | 5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHP15N50E-GE3 TTI: SIHP15N50E-GE3 Vishay Semiconductors Availability: 3,400In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 3,400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 14.5 A | 243 mOhms | 30 V | 4 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | SIHP15N50E-BE3 | ||||
Mfr: SI2338DS-T1-BE3 TTI: SI2338DS-T1-BE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs SOT23 N-CH 30V 5.5A | 21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2338DS-T1-GE3 |