Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHLL014TR-GE3 TTI: SIHLL014TR-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs TO-261 60V 2.7A N-CH MOSFET | 2,500In Stock | Si | Reel | |||||||||||||||||||
Mfr: TN2404K-T1-GE3 TTI: TN2404K-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 240V 0.2A 0.36W 4.0ohms @ 10V | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 257 V | 200 mA | 2.2 Ohms | 20 V | 1.65 V | 4.87 nC | - 55 C | + 150 C | 360 mW | Enhancement | TrenchFET | Reel | TN2404K-GE3 | |||
Mfr: SI2318CDS-T1-GE3 TTI: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 40V Vds 20V Vgs SOT-23 | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: SI5468DC-T1-GE3 TTI: SI5468DC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5468DC-GE3 | |||
Mfr: IXFH60N65X2 TTI: IXFH60N65X2 IXYS Availability: 180In StockMOSFETs MOSFET 650V/60A Ultra Junction X2 | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | 30 V | 2.7 V | 107 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SI7119DN-T1-GE3 TTI: SI7119DN-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-GE3 | |||
Mfr: RYC002N05T316 TTI: RYC002N05T316 ROHM Semiconductor Availability: 9,000In StockMOSFETs 0.9V Drive Nch Si MOSFET | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 800 mV | - 55 C | + 150 C | 350 mW | Enhancement | Reel | RYC002N05 | |||||
Mfr: SIR870BDP-T1-RE3 TTI: SIR870BDP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs N-CHANNEL 100 V | 3,000In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | |||||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHD2N80E-GE3 TTI: SIHD2N80E-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 12,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 2.8 A | 2.38 Ohms | 30 V | 4 V | 9.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SI3410DV-T1-GE3 TTI: SI3410DV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 19.5 mOhms | 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.1 W | Enhancement | TrenchFET | Reel | SI3410DV-GE3 | |||
Mfr: IRFI840GPBF TTI: IRFI840GPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs TO220 500V 4.6A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.6 A | 850 mOhms | 20 V | 2 V | 67 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ40PBF-BE3 | |||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHP28N60EF-GE3 TTI: SIHP28N60EF-GE3 Vishay / Siliconix Availability: 8,050In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 8,050In Stock | Si | Through Hole | TO-220-3 | Tube | |||||||||||||||||
50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 76 A | 25 mOhms | 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
100In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 600 V | 32 A | 350 mOhms | 20 V | 4 V | 196 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | |||||
Mfr: SIHB6N65E-GE3 TTI: SIHB6N65E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 30 V | 4 V | 24 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SIRA12DP-T1-GE3 TTI: SIRA12DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V 4.3mOhm@10V 25A N-Ch G-IV | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA12DP-GE3 | |||
Mfr: SI2306BDS-T1-BE3 TTI: SI2306BDS-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT23 N-CH 30V 3.16A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | 20 V | 3 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | Reel | SI2306BDS-T1-E3 | ||||
Mfr: PSMN6R0-30YLB,115 TTI: PSMN6R0-30YLB,115 Nexperia Availability: 12,000In StockMOSFETs PSMN6R0-30YLB/SOT669/LFPAK | 12,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 30 V | 71 A | 6.9 mOhms | 20 V | 1.95 V | 19 nC | - 55 C | + 175 C | 58 W | Enhancement | Reel | 934066006115 | ||||
Mfr: SIR873DP-T1-GE3 TTI: SIR873DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 37 A | 39.5 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: RSQ035N06HZGTR TTI: RSQ035N06HZGTR ROHM Semiconductor Availability: 12,000In StockMOSFETs SOT457 N-CH 60V 3.5A | 12,000In Stock | Si | SMD/SMT | SOT-457T-6 | N-Channel | 1 Channel | 60 V | 3.5 A | 70 mOhms | 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | AEC-Q101 | Reel | RSQ035N06HZG | |||
Mfr: SIHD12N50E-GE3 TTI: SIHD12N50E-GE3 Vishay / Siliconix Availability: 2,550In StockMOSFETs 500V Vds 30V Vgs DPAK (TO-252) | 2,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube |