MOSFETs
18,332 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 3.5 Ohms | - 20 V, 20 V | 5 V | 67 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | ||||||
Mfr: SIR470DP-T1-GE3 TTI: SIR470DP-T1-GE3 Vishay Semiconductors Availability: 48,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 48,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.9 mOhms | - 20 V, 20 V | 1 V | 155 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR814DP-T1-GE3 | |||
Mfr: SI4122DY-T1-GE3 TTI: SI4122DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 40V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | - 25 V, 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | |||
Mfr: RUF015N02TL TTI: RUF015N02TL ROHM Semiconductor Availability: 69,000In StockMOSFETs Med Pwr, Sw MOSFET P Chan, 20V, 1.5A | 69,000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 20 V | 1.5 A | 180 mOhms | - 10 V, 10 V | 1 V | 1.8 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RUF015N02 | ||||
90In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 7.3 Ohms | - 30 V, 30 V | 2.5 V | 38.6 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: SI1401EDH-T1-BE3 TTI: SI1401EDH-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT363 P-CH 12V 4A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-GE3 | |||
Mfr: SI1416EDH-T1-BE3 TTI: SI1416EDH-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SOT363 N-CH 30V 3.9A | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | - 12 V, 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-GE3 | |||
Mfr: IRF9540PBF-BE3 TTI: IRF9540PBF-BE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs TO220 100V 19A P-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF9540PBF | ||||
Mfr: IRFBF30PBF-BE3 TTI: IRFBF30PBF-BE3 Vishay / Siliconix Availability: 950In StockMOSFETs TO220 900V 3.6A N-CH MOSFET | 950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBF30PBF | ||||
Mfr: IRFR9024PBF-BE3 TTI: IRFR9024PBF-BE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 60V 8.8A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | - 20 V, 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SI7431DP-T1-E3 TTI: SI7431DP-T1-E3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -200V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 174 mOhms | - 20 V, 20 V | 4 V | 135 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7431DP-E3 | |||
Mfr: SIR622DP-T1-GE3 TTI: SIR622DP-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 27 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: IXFH60N65X2 TTI: IXFH60N65X2 IXYS Availability: 180In StockMOSFETs MOSFET 650V/60A Ultra Junction X2 | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | - 30 V, 30 V | 2.7 V | 107 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SSM6N57NU,LF TTI: SSM6N57NU,LF Toshiba Availability: 3,000In StockMOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS | 3,000In Stock | Si | N-Channel | 2 Channel | U-MOSVII-H | Reel | ||||||||||||||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: SI7252DP-T1-GE3 TTI: SI7252DP-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 36.7 A | 14 mOhms | - 20 V, 20 V | 1.5 V | 27 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | ||||
Mfr: RQ6C050UNTR TTI: RQ6C050UNTR ROHM Semiconductor Availability: 6,000In StockMOSFETs 1.5V Drive Nch MOSFET | 6,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 20 V | 5 A | 30 mOhms | - 10 V, 10 V | 1 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6C050UN | ||||
Mfr: SI1480DH-T1-GE3 TTI: SI1480DH-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 100V Vds 20V Vgs SC70-6 | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | |||
Mfr: SI5936DU-T1-GE3 TTI: SI5936DU-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock12,000 On Order Expected MOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 3,000In Stock12,000 On Order Expected | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 30 V | 6 A | 30 mOhms | - 20 V, 20 V | 1.2 V | 11 nC | - 55 C | + 150 C | 10.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA462DJ-T1-GE3 TTI: SIA462DJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 18 mOhms | - 20 V, 20 V | 1.2 V | 17 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP17N80E-GE3 TTI: SIHP17N80E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 800V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 122 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | SIHP17N80E-BE3 | ||||
Mfr: BUK7Y28-75B,115 TTI: BUK7Y28-75B,115 Nexperia Availability: 9,000In StockMOSFETs SOT669 N-CH 75V 35.5A | 9,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 35.5 A | 23 mOhms | - 20 V, 20 V | 2 V | 21.2 nC | - 55 C | + 175 C | 85 W | Enhancement | Reel | 934063303115 | ||||
Mfr: SI5468DC-T1-GE3 TTI: SI5468DC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5468DC-GE3 | |||
Mfr: IXFK64N60P3 TTI: IXFK64N60P3 IXYS Availability: 25In StockMOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET | 25In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | - 30 V, 30 V | 5 V | 145 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube |
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