P-Channel - MOSFETs
1,959 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFI9Z24GPBF TTI: IRFI9Z24GPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 P-CH 60V 8.5A | 2,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 8.5 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
3,000In Stock | Si | SMD/SMT | SOT-23S-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 250 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SI3417DV-T1-GE3 TTI: SI3417DV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 36 mOhms | 20 V | 3 V | 50 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2377EDS-T1-BE3 TTI: SI2377EDS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 P-CH 20V 3.7A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 61 mOhms | 8 V | 1 V | 7.6 nC | - 55 C | + 150 C | 1.8 W | Enhancement | Reel | SI2377EDS-T1-GE3 | ||||
Mfr: SI4943CDY-T1-GE3 TTI: SI4943CDY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs -20V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | 20 V | 3 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-GE3 | |||
Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 | |||
Mfr: SI2305CDS-T1-BE3 TTI: SI2305CDS-T1-BE3 Vishay / Siliconix Availability: 24,000In StockMOSFETs SOT23 P-CH 8V 4.41A | 24,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 5.8 A | 35 mOhms | 8 V | 1 V | 12 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2305CDS-T1-GE3 | ||||
Mfr: SI5935CDC-T1-E3 TTI: SI5935CDC-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | 8 V | 1 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-E3 | |||
Mfr: SIUD403ED-T1-GE3 TTI: SIUD403ED-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 0806 | 9,000In Stock | Si | SMD/SMT | PowerPAK-0806-3 | P-Channel | 1 Channel | 20 V | 500 mA | 1.01 Ohms | 8 V | 900 mV | 1.7 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
9,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 13.3 A | 10 mOhms | 20 V | 3 V | 34 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: SI1967DH-T1-BE3 TTI: SI1967DH-T1-BE3 Vishay Availability: 60,000In StockMOSFETs SOT363 2PCH 20V 1A | 60,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | 8 V | 2.5 V | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | SI1967DH-T1-GE3 SI1967DH-T1-E3 | ||||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: IRF9610PBF-BE3 TTI: IRF9610PBF-BE3 Vishay / Siliconix Availability: 5,950In StockMOSFETs TO220 200V 1.8A P-CH MOSFET | 5,950In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF | ||||
Mfr: SISS67DN-T1-GE3 TTI: SISS67DN-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8S | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | 25 V | 2.5 V | 74 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR403EDP-T1-GE3 TTI: SIR403EDP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 40 A | 11.5 mOhms | 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4835DDY-T1-GE3 TTI: SI4835DDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-GE3 | |||
Mfr: SI4835DDY-T1-E3 TTI: SI4835DDY-T1-E3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 25V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-E3 | |||
Mfr: SIA413DJ-T1-GE3 TTI: SIA413DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 12V 12A 19W 29mohm @ 4.5V | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 150 mOhms | 8 V | 1 V | 38 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | SIA413DJ-GE3 | |||
150In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: IRFR9310TRLPBF-BE3 TTI: IRFR9310TRLPBF-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 400V 1.8A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRFR9310TRLPBF | ||||
Mfr: SI1469DH-T1-BE3 TTI: SI1469DH-T1-BE3 Vishay Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 2.7A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | SI1469DH-T1-E3 SI1469DH-T1-GE3 | ||||
Mfr: SI7149DP-T1-GE3 TTI: SI7149DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V 50A 69W 5.2mohm @ 10V | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | 25 V | 2.5 V | 98 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET | Reel | SI7149DP-GE3 | |||
Mfr: SI3433CDV-T1-BE3 TTI: SI3433CDV-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs TSOP6 P-CH 20V 5.2A | 9,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 6 A | 38 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.3 W | Enhancement | Reel | SI3433CDV-T1-GE3 | ||||
6,000In Stock | Si | SMD/SMT | SOT-23S-3 | P-Channel | 1 Channel | 20 V | 4.2 A | 53 mOhms | 12 V | 1.2 V | 10 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 |