N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFBF20SPBF TTI: IRFBF20SPBF Vishay Semiconductors Availability: 150In StockMOSFETs TO263 900V 1.7A N-CH MOSFET | 150In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
Mfr: SI5442DU-T1-GE3 TTI: SI5442DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 20 V | 25 A | 10 mOhms | 8 V | 400 mV | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | ||||
150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.4 Ohms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 2,550In StockMOSFETs N-Chan 100V 4.3 Amp | 2,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: RUE002N02TL TTI: RUE002N02TL ROHM Semiconductor Availability: 90,000In StockMOSFETs Sm Signal, Sw MOSFET N Chan, 20V, 0.2A | 90,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 200 mA | 1.2 Ohms | 8 V | 1 V | + 150 C | 150 mW | Enhancement | Reel | RUE002N02 | ||||||
Mfr: SI7738DP-T1-GE3 TTI: SI7738DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 30 A | 38 mOhms | 20 V | 4 V | 35 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7738DP-GE3 | |||
Mfr: SIHG47N60EF-GE3 TTI: SIHG47N60EF-GE3 Vishay / Siliconix Availability: 2,450In StockMOSFETs RECOMMENDED ALT SIHW | 2,450In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 2 V | 228 nC | - 55 C | + 150 C | 379 W | Enhancement | Tube | |||||
Mfr: SI7772DP-T1-GE3 TTI: SI7772DP-T1-GE3 Vishay Semiconductors Availability: 33,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 33,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35.6 A | 13 mOhms | 20 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET | Reel | SI7772DP-GE3 | |||
Mfr: IXFH320N10T2 TTI: IXFH320N10T2 IXYS Availability: 180In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 180In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHG20N50E-GE3 TTI: SIHG20N50E-GE3 Vishay Semiconductors Availability: 1,150In StockMOSFETs 500V Vds 30V Vgs TO-247AC | 1,150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 180 A | 7.5 mOhms | 20 V | 2.5 V | 154 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHD240N60E-GE3 TTI: SIHD240N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 600V Vds; +/-30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | 30 V | 3 V | 23 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SI3440ADV-T1-BE3 TTI: SI3440ADV-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs TSOP6 150V 2.2A N-CH MOSFET | 12,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 150 V | 2.2 A | 380 mOhms | 20 V | 4 V | 1.65 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3440ADV-T1-GE3 | ||||
12,000In Stock | Si | SMD/SMT | TSMT-8 | N-Channel | 2 Channel | 40 V | 8 A | 17.7 mOhms | 20 V | 2.5 V | 10.6 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | QH8KB6 | |||||
Mfr: SI4164DY-T1-GE3 TTI: SI4164DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30 A | 3.2 mOhms | 20 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4164DY-GE3 | |||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs RECOMMENDED ALT SUD1 | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: IRFP460PBF TTI: IRFP460PBF Vishay Semiconductors Availability: 3,500In StockMOSFETs TO247 500V 20A N-CH MOSFET | 3,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRFIBE30GPBF TTI: IRFIBE30GPBF Vishay Semiconductors Availability: 300In StockMOSFETs N-Channel Power MOSFET 2.1A, 800V, 78nC | 300In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 2.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: IRFR024PBF TTI: IRFR024PBF Vishay Semiconductors Availability: 900In StockMOSFETs TO252 N-CH 60V 14A | 900In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | 20 V | 2 V | 25 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SIRA06DP-T1-GE3 TTI: SIRA06DP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA06DP-GE3 | |||
300In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 48 A | 100 mOhms | 20 V | - 55 C | + 150 C | 500 W | Enhancement | HyperFET | Tube | |||||||
Mfr: IRFPG30PBF TTI: IRFPG30PBF Vishay Semiconductors Availability: 350In StockMOSFETs TO247 1KV 3.1A N-CH MOSFET | 350In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 2 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFU110PBF TTI: IRFU110PBF Vishay Semiconductors Availability: 3,900In StockMOSFETs TO251 100V 4.3A N-CH MOSFET | 3,900In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFBC40ASPBF TTI: IRFBC40ASPBF Vishay Semiconductors Availability: 5,850In StockMOSFETs N-Chan 600V 6.2 Amp | 5,850In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFR420TRLPBF TTI: IRFR420TRLPBF Vishay Semiconductors Availability: 27,000In StockMOSFETs TO252 500V 2.4A N-CH MOSFET | 27,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel |