Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF840LCPBF TTI: IRF840LCPBF Vishay Semiconductors Availability: 550In StockMOSFETs TO220 500V 8A N-CH MOSFET | 550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840LCPBF-BE3 | ||||
570In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | |||||
Mfr: IRF510SPBF TTI: IRF510SPBF Vishay Semiconductors Availability: 1,700In StockMOSFETs N-Chan 100V 5.6 Amp | 1,700In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: SI3932DV-T1-GE3 TTI: SI3932DV-T1-GE3 Vishay Semiconductors Availability: 39,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 39,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | |||
Mfr: IRF640SPBF TTI: IRF640SPBF Vishay Semiconductors Availability: 3,350In StockMOSFETs N-Chan 200V 18 Amp | 3,350In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFU420PBF TTI: IRFU420PBF Vishay Semiconductors Availability: 75In StockMOSFETs N-Chan 500V 2.4 Amp | 75In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI7108DN-T1-E3 TTI: SI7108DN-T1-E3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 20V 22A 0.0049Ohm | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-E3 | |||
Mfr: SI4430BDY-T1-GE3 TTI: SI4430BDY-T1-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 30V 20A 3.0W 4.5mohm @ 10V | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.5 mOhms | 20 V | 1 V | 36 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4430BDY-GE3 | |||
Mfr: SI5935CDC-T1-GE3 TTI: SI5935CDC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 2 Channel | 20 V | 4 A | 100 mOhms | 8 V | 400 mV | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5935CDC-GE3 SIR814DP-T1-GE3 | |||
150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 48 A | 65 mOhms | 30 V | 3 V | 76 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI6423DQ-T1-GE3 TTI: SI6423DQ-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -12V Vds 8V Vgs TSSOP-8 | 12,000In Stock | Si | SMD/SMT | TSSOP-8 | P-Channel | 1 Channel | 12 V | 9.5 A | 8.5 mOhms | 8 V | 400 mV | 110 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI6423DQ-GE3 | |||
Mfr: IRFR9014PBF TTI: IRFR9014PBF Vishay Semiconductors Availability: 9,450In StockMOSFETs TO252 P-CH 60V 5.1A | 9,450In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SISS72DN-T1-GE3 TTI: SISS72DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 3,000In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 150 V | 25.5 A | 42 mOhms | 20 V | 2 V | 22 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, ThunderFET, PowerPAK | Reel | ||||
Mfr: SIRA52ADP-T1-RE3 TTI: SIRA52ADP-T1-RE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 131 A | 1.63 mOhms | - 16 V, 20 V | 1.1 V | 100 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHD5N80AE-GE3 TTI: SIHD5N80AE-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs DPAK 800V 4.4A E SERIES | 3,000In Stock | Si | SMD/SMT | TO-252-4 | N-Channel | 1 Channel | 800 V | 4.4 A | 1.35 Ohms | 30 V | 4 V | 11 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
54,000In Stock | Si | SMD/SMT | SOT-363T-6 | N-Channel | 2 Channel | 30 V | 1.5 A | 240 mOhms | 12 V | 1.5 V | 1.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | US6K1 | |||||
Mfr: IRFP254PBF TTI: IRFP254PBF Vishay Semiconductors Availability: 10,650In StockMOSFETs TO247 250V 23A N-CH MOSFET | 10,650In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 23 A | 140 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRF740APBF TTI: IRF740APBF Vishay Semiconductors Availability: 150In StockMOSFETs TO220 400V 10A N-CH MOSFET | 150In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740APBF-BE3 | ||||
Mfr: SIA483ADJ-T1-GE3 TTI: SIA483ADJ-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs SC70 P-CH 30V 10.6A | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | - 20 V, 16 V | 5 V | 17 nC | - 55 C | + 150 C | 17.9 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI1553CDL-T1-BE3 TTI: SI1553CDL-T1-BE3 Vishay / Siliconix Availability: 54,000In StockMOSFETs SOT363 NPCH 20V .7A | 54,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-GE3 | |||
Mfr: BSS138BKT116 TTI: BSS138BKT116 ROHM Semiconductor Availability: 12,000In StockMOSFETs SOT23 N-CH 60V .4A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 680 mOhms | 20 V | 2 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | BSS138BK | |||||
Mfr: SI2369DS-T1-BE3 TTI: SI2369DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 P-CH 30V 5.4A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2369DS-T1-GE3 | ||||
400In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube | ||||||
Mfr: SISS78LDN-T1-GE3 TTI: SISS78LDN-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PPAK1212 N-CH 70V 19.4A | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 70 V | 66.7 A | 4.8 mOhms | 20 V | 2.3 V | 32 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2303CDS-T1-BE3 TTI: SI2303CDS-T1-BE3 Vishay / Siliconix Availability: 78,000In StockMOSFETs SOT23 P-CH 30V 1.9A | 78,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 |