P-Channel - MOSFETs
1,959 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 100 V | 90 A | 25 mOhms | 20 V | 4 V | 120 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube | ||||||
Mfr: RV3CA01ZPT2CL TTI: RV3CA01ZPT2CL ROHM Semiconductor Availability: 8,000In StockMOSFETs DFN0604 N-CH 20V 100MA | 8,000In Stock | Si | SMD/SMT | DFN-0604-3 | P-Channel | 1 Channel | 20 V | 100 mA | 3.8 Ohms | 10 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | Reel | RV3CA01ZP | |||||
6,000In Stock | Si | SMD/SMT | SOT-23S-3 | P-Channel | 1 Channel | 20 V | 4.2 A | 53 mOhms | 12 V | 1.2 V | 10 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 | |||
Mfr: BSS84WAHZGT106 TTI: BSS84WAHZGT106 ROHM Semiconductor Availability: 3,000In StockMOSFETs SOT323 P-CH 60V .21A | 3,000In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 60 V | 210 mA | 5.3 Ohms | 20 V | 2.5 V | - 55 C | + 150 C | 300 mW | Enhancement | Reel | BSS84WAHZG | |||||
Mfr: IRFU9310PBF TTI: IRFU9310PBF Vishay Semiconductors Availability: 6,000In StockMOSFETs P-Chan 400V 1.8 Amp | 6,000In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: SI3417DV-T1-GE3 TTI: SI3417DV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 36 mOhms | 20 V | 3 V | 50 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2377EDS-T1-BE3 TTI: SI2377EDS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 P-CH 20V 3.7A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 61 mOhms | 8 V | 1 V | 7.6 nC | - 55 C | + 150 C | 1.8 W | Enhancement | Reel | SI2377EDS-T1-GE3 | ||||
Mfr: SI4943CDY-T1-GE3 TTI: SI4943CDY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs -20V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | 20 V | 3 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-GE3 | |||
Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 | |||
Mfr: SI2305CDS-T1-BE3 TTI: SI2305CDS-T1-BE3 Vishay / Siliconix Availability: 24,000In StockMOSFETs SOT23 P-CH 8V 4.41A | 24,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 5.8 A | 35 mOhms | 8 V | 1 V | 12 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2305CDS-T1-GE3 | ||||
Mfr: SI7117DN-T1-E3 TTI: SI7117DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -150V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 2.17 A | 1.2 Ohms | 20 V | 4.5 V | 7.7 nC | - 55 C | + 150 C | 12.5 W | Enhancement | TrenchFET | Reel | SI7117DN-E3 | |||
Mfr: RQ5C030TPTL TTI: RQ5C030TPTL ROHM Semiconductor Availability: 3,000In StockMOSFETs SOT346 P-CH 20V 3A | 3,000In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 20 V | 3 A | 75 mOhms | 12 V | 2 V | 9.3 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RQ5C030TP | ||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 33.5 A | 3 mOhms | 20 V | 3 V | 76 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
12,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 14.6 A | 10 mOhms | 20 V | 3 V | 34 nC | - 55 C | + 150 C | 3.12 W | Enhancement | Reel | ||||||
Mfr: SI4491EDY-T1-GE3 TTI: SI4491EDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 25.8 A | 11.2 mOhms | 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 6.9 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISH407DN-T1-GE3 TTI: SISH407DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds; +/-8V Vgs PowerPAK 1212-8SH | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 1 V | 93.8 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SI2329DS-T1-GE3 TTI: SI2329DS-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -8V Vds 5V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 6 A | 30 mOhms | 5 V | 350 mV | 19.3 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
6,000In Stock | Si | SMD/SMT | PMPAK-8 | P-Channel | 1 Channel | 30 V | 12.7 A | 13.5 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 150 C | 3.13 W | Enhancement | Reel | ||||||
Mfr: IRFR9010PBF TTI: IRFR9010PBF Vishay Semiconductors Availability: 3,000In StockMOSFETs TO252 P-CH 50V 5.3A | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 50 V | 5.3 A | 500 mOhms | 20 V | 4 V | 9.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SI5459DU-T1-GE3 TTI: SI5459DU-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 8 A | 82 mOhms | 12 V | 1.4 V | 26 nC | - 55 C | + 150 C | 10.9 W | Enhancement | TrenchFET | Reel | SI5459DU-GE3 | |||
Mfr: SIR165DP-T1-GE3 TTI: SIR165DP-T1-GE3 Vishay / Siliconix Availability: 15,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 3.8 mOhms | 20 V | 2.3 V | 92 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
3,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 5.8 A | 50 mOhms | 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
6,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 15.5 A | 7 mOhms | 25 V | 2 V | 33 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: SI3493BDV-T1-BE3 TTI: SI3493BDV-T1-BE3 Vishay / Siliconix Availability: 36,000In StockMOSFETs TSOP6 P-CH 20V 7A | 36,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 26.2 nC | - 55 C | + 150 C | 2.97 W | Enhancement | Reel | SI3493BDV-T1-E3 |