P-Channel - MOSFETs
1,945 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI3443CDV-T1-GE3 TTI: SI3443CDV-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.97 A | 100 mOhms | 12 V | 1.5 V | 7.53 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3443CDV-T1-BE3 SI3443CDV-GE3 | |||
Mfr: IRF9630PBF-BE3 TTI: IRF9630PBF-BE3 Vishay / Siliconix Availability: 1,650In StockMOSFETs TO220 200V 6.5A P-CH MOSFET | 1,650In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF | ||||
6,000In Stock | Si | SMD/SMT | SOT-457T-6 | P-Channel | 2 Channel | 20 V | 1.5 A | 215 mOhms | 12 V | 2 V | 3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | QS6J1 | |||||
Mfr: RV3CA01ZPT2CL TTI: RV3CA01ZPT2CL ROHM Semiconductor Availability: 8,000In StockMOSFETs DFN0604 N-CH 20V 100MA | 8,000In Stock | Si | SMD/SMT | DFN-0604-3 | P-Channel | 1 Channel | 20 V | 100 mA | 3.8 Ohms | 10 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | Reel | RV3CA01ZP | |||||
Mfr: IRF9Z34SPBF TTI: IRF9Z34SPBF Vishay Semiconductors Availability: 300In StockMOSFETs P-Chan 60V 18 Amp | 300In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | |||||
Mfr: SI1441EDH-T1-BE3 TTI: SI1441EDH-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 4A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 4 A | 34 mOhms | 10 V | 1 V | 33 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1441EDH-T1-GE3 | |||
Mfr: SI4483ADY-T1-GE3 TTI: SI4483ADY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 25V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.2 A | 15.3 mOhms | 25 V | 2.6 V | 135 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4483ADY-GE3 | |||
Mfr: SI3483CDV-T1-BE3 TTI: SI3483CDV-T1-BE3 Vishay / Siliconix Availability: 33,000In StockMOSFETs TSOP6 P-CH 30V 6.1A | 33,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 34 mOhms | 20 V | 1 V | 11.5 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3483CDV-T1-GE3 | ||||
Mfr: SI3493BDV-T1-GE3 TTI: SI3493BDV-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-GE3 | |||
6,000In Stock | Si | SMD/SMT | SOT-23S-3 | P-Channel | 1 Channel | 20 V | 4 A | 52 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SI7615DN-T1-GE3 TTI: SI7615DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs RECOMMENDED ALT SI76 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.1 mOhms | 12 V | 1.5 V | 183 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7615DN-GE3 | |||
9,000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 9.3 A | 20 mOhms | 20 V | 3 V | 12 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||||
Mfr: IRFI9Z34GPBF TTI: IRFI9Z34GPBF Vishay Semiconductors Availability: 50In StockMOSFETs TO220 P-CH 60V 12A | 50In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 12 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 42 W | Enhancement | Tube | |||||
Mfr: SI4835DDY-T1-GE3 TTI: SI4835DDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 25V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-GE3 | |||
Mfr: SIR403EDP-T1-GE3 TTI: SIR403EDP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 40 A | 11.5 mOhms | 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFR9310TRLPBF-BE3 TTI: IRFR9310TRLPBF-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO252 400V 1.8A P-CH MOSFET | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRFR9310TRLPBF | ||||
Mfr: SI1469DH-T1-BE3 TTI: SI1469DH-T1-BE3 Vishay Availability: 9,000In StockMOSFETs SOT363 P-CH 20V 2.7A | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | Reel | SI1469DH-T1-E3 SI1469DH-T1-GE3 | ||||
Mfr: RS1L151ATTB1 TTI: RS1L151ATTB1 ROHM Semiconductor Availability: 2,500In StockMOSFETs HSOP8 P-CH 60V 56A | 2,500In Stock | Si | SMD/SMT | HSOP-8 | P-Channel | 1 Channel | 60 V | 56 A | 11.3 mOhms | 20 V | 2.5 V | 130 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | RS1L151AT | ||||
Mfr: SIA413DJ-T1-GE3 TTI: SIA413DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 12V 12A 19W 29mohm @ 4.5V | 3,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 150 mOhms | 8 V | 1 V | 38 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | SIA413DJ-GE3 | |||
Mfr: SI3473CDV-T1-BE3 TTI: SI3473CDV-T1-BE3 Vishay / Siliconix Availability: 15,000In Stock6,000 On Order Expected 20-Nov-26 MOSFETs TSOP6 P-CH 12V 8A | 15,000In Stock6,000 On Order Expected 20-Nov-26 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 22 mOhms | 8 V | 1 V | 65 nC | - 55 C | + 150 C | 4.2 W | Enhancement | Reel | SI3473CDV-T1-E3 | ||||
150In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: SI7149DP-T1-GE3 TTI: SI7149DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V 50A 69W 5.2mohm @ 10V | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | 25 V | 2.5 V | 98 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET | Reel | SI7149DP-GE3 | |||
Mfr: SUD08P06-155L-GE3 TTI: SUD08P06-155L-GE3 Vishay Semiconductors Availability: 8,000In StockMOSFETs -30V 0.155ohm@-10V -8.4A P-CH | 8,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.2 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SUD08P06-155L-BE3 | |||
Mfr: SI4835DDY-T1-E3 TTI: SI4835DDY-T1-E3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 25V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-E3 | |||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 |