Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI5457DC-T1-GE3 TTI: SI5457DC-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 12V Vgs 1206-8 ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 6 A | 56 mOhms | 12 V | 1.4 V | 38 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5457DC-GE3 | |||
Mfr: SUD19N20-90-E3 TTI: SUD19N20-90-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs TO252 200V 19A N-CH MOSFET | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-BE3 | |||
Mfr: IRFBE30PBF-BE3 TTI: IRFBE30PBF-BE3 Vishay / Siliconix Availability: 5,900In StockMOSFETs TO220 800V 4.1A N-CH MOSFET | 5,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF | ||||
Mfr: SI2393DS-T1-GE3 TTI: SI2393DS-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30-V (D-S) MOSFET P-CHANNEL | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.5 A | 22.7 mOhms | - 20 V, 16 V | 2.2 V | 16.8 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
60In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | 20 V | 3 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: SUD50P06-15-GE3 TTI: SUD50P06-15-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 60V 50A 113W 15mohm @ 10V | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | |||
650In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | |||||
3,000In Stock78,000 On Order Expected | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | UM6K33N | ||||||
Mfr: IRFR320TRPBF TTI: IRFR320TRPBF Vishay Semiconductors Availability: 264,000In StockMOSFETs TO252 400V 3.1A N-CH MOSFET | 264,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 5,650In StockMOSFETs TO247 400V 23A N-CH MOSFET | 5,650In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SSM3J355R,LF TTI: SSM3J355R,LF Toshiba Availability: 6,000In Stock12,000 On Order Expected 25-Jan-27 MOSFETs LowON Res MOSFET ID=-6A VDSS=-20V | 6,000In Stock12,000 On Order Expected 25-Jan-27 | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 23 mOhms | 10 V | 1 V | 16.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel | ||||
Mfr: SI4431CDY-T1-GE3 TTI: SI4431CDY-T1-GE3 Vishay Semiconductors Availability: 27,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 27,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 9 A | 32 mOhms | 20 V | 1 V | 38 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI4431CDY-GE3 | |||
Mfr: IRF830APBF-BE3 TTI: IRF830APBF-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO220 500V 5A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | 30 V | 4.5 V | 24 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830APBF | ||||
450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | ||||||
Mfr: IRFR9120PBF TTI: IRFR9120PBF Vishay Semiconductors Availability: 32,925In StockMOSFETs P-Chan 100V 5.6 Amp | 32,925In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRF840ASTRLPBF TTI: IRF840ASTRLPBF Vishay Semiconductors Availability: 10,400In StockMOSFETs N-Chan 500V 8.0 Amp | 10,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRF740ASPBF TTI: IRF740ASPBF Vishay Semiconductors Availability: 3,000In StockMOSFETs N-Chan 400V 10 Amp | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 2 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SSM3K15AMFV,L3F TTI: SSM3K15AMFV,L3F Toshiba Availability: 8,000In StockMOSFETs SM Sig N-CH MOS 30V 0.1A 20V VGSS | 8,000In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | ||||||||||||||||
Mfr: SI8487DB-T1-E1 TTI: SI8487DB-T1-E1 Vishay Semiconductors Availability: 6,000In StockMOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 | 6,000In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 7.7 A | 25 mOhms | 12 V | 1.2 V | 80 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI8487DB-E1 | |||
Mfr: SIS890DN-T1-GE3 TTI: SIS890DN-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock6,000 On Order Expected 21-Dec-26 MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock6,000 On Order Expected 21-Dec-26 | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 30 A | 19.5 mOhms | 20 V | 1.5 V | 29 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SIS890DN-GE3 | |||
50In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 76 A | 24 mOhms | 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 20,000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 20,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: SUM110P04-05-E3 TTI: SUM110P04-05-E3 Vishay Semiconductors Availability: 2,400In StockMOSFETs 40V 110A 375W | 2,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 110 A | 5 mOhms | 20 V | 2 V | 185 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFP140PBF TTI: IRFP140PBF Vishay Semiconductors Availability: 10,600In Stock900 On Order Expected 02-Jun-27 MOSFETs TO247 100V 31A N-CH MOSFET | 10,600In Stock900 On Order Expected 02-Jun-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 31 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 180 W | Enhancement | Tube | |||||
650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube |