Si - MOSFETs
17,626 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
90In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: IRFR420TRPBF TTI: IRFR420TRPBF Vishay Semiconductors Availability: 8,000In StockMOSFETs TO252 500V 3.3A N-CH MOSFET | 8,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 4 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR420TRPBF-BE3 | ||||
Mfr: SI4840BDY-T1-GE3 TTI: SI4840BDY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs 40V Vds 20V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-GE3 | |||
Mfr: IXFK140N30P TTI: IXFK140N30P IXYS Availability: 100In Stock600 On Order Expected 20-Jan-27 MOSFETs 140 Amps 300V 0.024 Ohms Rds | 100In Stock600 On Order Expected 20-Jan-27 | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
600In Stock1,000 On Order Expected 04-Nov-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | 20 V | 4 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRFZ14PBF-BE3 | |||||
Mfr: IRF510SPBF TTI: IRF510SPBF Vishay Semiconductors Availability: 1,000In Stock700 On Order Expected 08-Sep-26 MOSFETs N-Chan 100V 5.6 Amp | 1,000In Stock700 On Order Expected 08-Sep-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: IRF840LCPBF TTI: IRF840LCPBF Vishay Semiconductors Availability: 550In StockMOSFETs TO220 500V 8A N-CH MOSFET | 550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840LCPBF-BE3 | ||||
Mfr: IXTP76P10T TTI: IXTP76P10T IXYS Availability: 250In Stock300 On Order Expected 14-Dec-26 MOSFETs TO220 100V 76A P-CH TRENCH | 250In Stock300 On Order Expected 14-Dec-26 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 76 A | 24 mOhms | 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
Mfr: SIS890DN-T1-GE3 TTI: SIS890DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 30 A | 19.5 mOhms | 20 V | 1.5 V | 29 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SIS890DN-GE3 | |||
450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | ||||||
Mfr: IRF840ASTRLPBF TTI: IRF840ASTRLPBF Vishay Semiconductors Availability: 18,400In StockMOSFETs N-Chan 500V 8.0 Amp | 18,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: TPH2R608NH,L1Q TTI: TPH2R608NH,L1Q Toshiba Availability: 15,000In StockMOSFETs Power MOSFET N-Channel Single | 15,000In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 75 V | 168 A | 2.6 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: IRFR9120PBF TTI: IRFR9120PBF Vishay Semiconductors Availability: 3,025In Stock30,000 On Order Expected MOSFETs P-Chan 100V 5.6 Amp | 3,025In Stock30,000 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SSM3J351R,LF TTI: SSM3J351R,LF Toshiba Availability: 54,000In Stock12,000 On Order Expected 04-Sep-26 MOSFETs Small-signal MOSFET ID -3.5A, -60V VDSS | 54,000In Stock12,000 On Order Expected 04-Sep-26 | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 60 V | 3.5 A | 164 mOhms | - 20 V, 10 V | 800 mV | 15.1 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||
Mfr: IRF740ASPBF TTI: IRF740ASPBF Vishay Semiconductors Availability: 3,000In StockMOSFETs N-Chan 400V 10 Amp | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 2 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SUM110P04-05-E3 TTI: SUM110P04-05-E3 Vishay Semiconductors Availability: 2,400In StockMOSFETs 40V 110A 375W | 2,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 110 A | 5 mOhms | 20 V | 2 V | 185 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3932DV-T1-GE3 TTI: SI3932DV-T1-GE3 Vishay Semiconductors Availability: 39,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 39,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | |||
Mfr: IRFP140PBF TTI: IRFP140PBF Vishay Semiconductors Availability: 4,000In Stock10,000 On Order Expected MOSFETs TO247 100V 31A N-CH MOSFET | 4,000In Stock10,000 On Order Expected | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 31 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 180 W | Enhancement | Tube | |||||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 20,000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 20,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: SI2356DS-T1-BE3 TTI: SI2356DS-T1-BE3 Vishay / Siliconix Availability: 54,000In StockMOSFETs SOT23 N-CH 40V 3.2A | 54,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2356DS-T1-GE3 | ||||
Mfr: IRFR9210PBF TTI: IRFR9210PBF Vishay Semiconductors Availability: 1,125In StockMOSFETs TO252 200V 1.9A P-CH MOSFET | 1,125In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 1.9 A | 3 Ohms | 20 V | 4 V | 8.9 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SI7106DN-T1-GE3 TTI: SI7106DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-GE3 | |||
Mfr: SIA433EDJ-T1-GE3 TTI: SIA433EDJ-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SC-70 | 15,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 15 mOhms | 12 V | 1.2 V | 75 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA433EDJ-GE3 | |||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
Mfr: SIHG47N60E-GE3 TTI: SIHG47N60E-GE3 Vishay / Siliconix Availability: 8,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 8,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube |