MOSFETs
18,702 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS890DN-T1-GE3 TTI: SIS890DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 30 A | 19.5 mOhms | - 20 V, 20 V | 1.5 V | 29 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SIS890DN-GE3 | |||
Mfr: IRFR9120PBF TTI: IRFR9120PBF Vishay Semiconductors Availability: 3,025In Stock21,000 On Order Expected 30-Sep-26 MOSFETs P-Chan 100V 5.6 Amp | 3,025In Stock21,000 On Order Expected 30-Sep-26 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI3932DV-T1-GE3 TTI: SI3932DV-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock27,000 On Order Expected 17-Aug-26 MOSFETs 30V Vds 20V Vgs TSOP-6 | 3,000In Stock27,000 On Order Expected 17-Aug-26 | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | - 20 V, 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | |||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 20,000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 20,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | - 20 V, 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: TPH2R608NH,L1Q TTI: TPH2R608NH,L1Q Toshiba Availability: 15,000In StockMOSFETs Power MOSFET N-Channel Single | 15,000In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 75 V | 168 A | 2.6 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: EM6K34T2CR TTI: EM6K34T2CR ROHM Semiconductor Availability: 24,000In Stock72,000 On Order Expected 30-Dec-30 MOSFETs 0.9V Drive Nch MOSFET | 24,000In Stock72,000 On Order Expected 30-Dec-30 | Si | SMD/SMT | SOT-563-6 | N-Channel | 2 Channel | 50 V | 200 mA | 2.2 Ohms | - 8 V, 8 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | Reel | EM6K34 | |||||
450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | ||||||
Mfr: SI2356DS-T1-BE3 TTI: SI2356DS-T1-BE3 Vishay / Siliconix Availability: 48,000In StockMOSFETs SOT23 N-CH 40V 3.2A | 48,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | - 12 V, 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2356DS-T1-GE3 | ||||
Mfr: IRF840ASTRLPBF TTI: IRF840ASTRLPBF Vishay Semiconductors Availability: 20,000In StockMOSFETs N-Chan 500V 8.0 Amp | 20,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRF740ASPBF TTI: IRF740ASPBF Vishay Semiconductors Availability: 3,000In StockMOSFETs N-Chan 400V 10 Amp | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 30 V, 30 V | 2 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFZ44PBF-BE3 TTI: IRFZ44PBF-BE3 Vishay / Siliconix Availability: 2,300In StockMOSFETs TO220 N-CH 60V 50A | 2,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF | ||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||||
Mfr: TK5A80E,S4X TTI: TK5A80E,S4X Toshiba Availability: 245,100In StockMOSFETs TO220 800V 5A N-CH MOSFET | 245,100In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 800 V | 5 A | 2.4 Ohms | - 30 V, 30 V | 2.5 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
Mfr: SIR836DP-T1-GE3 TTI: SIR836DP-T1-GE3 Vishay Semiconductors Availability: 21,000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 21,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 21 A | 19 mOhms | - 20 V, 20 V | 1.2 V | 11.8 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR836DP-GE3 | |||
Mfr: SIR800DP-T1-GE3 TTI: SIR800DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 50 A | 2.3 mOhms | - 12 V, 12 V | 600 mV | 133 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR800DP-GE3 | |||
Mfr: IXFH60N50P3 TTI: IXFH60N50P3 IXYS Availability: 300In StockMOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET | 300In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | - 30 V, 30 V | 5 V | 96 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: SI7106DN-T1-GE3 TTI: SI7106DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | - 12 V, 12 V | 1.5 V | 17.5 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7106DN-GE3 | |||
500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 600 mA | 34 Ohms | - 20 V, 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
Mfr: IRFR9210PBF TTI: IRFR9210PBF Vishay Semiconductors Availability: 1,125In StockMOSFETs TO252 200V 1.9A P-CH MOSFET | 1,125In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 1.9 A | 3 Ohms | - 20 V, 20 V | 4 V | 8.9 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SI2302CDS-T1-E3 TTI: SI2302CDS-T1-E3 Vishay Semiconductors Availability: 3,000In Stock12,000 On Order Expected 31-Aug-26 MOSFETs 20V Vds 8V Vgs SOT-23 | 3,000In Stock12,000 On Order Expected 31-Aug-26 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.6 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 710 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-E3 | |||
Mfr: PSMN8R3-40YS,115 TTI: PSMN8R3-40YS,115 Nexperia Availability: 1,500In StockMOSFETs PSMN8R3-40YS/SOT669/LFPAK | 1,500In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 40 V | 70 A | 8.3 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 175 C | 74 W | Enhancement | Reel | 934063936115 | ||||
Mfr: SIHG47N60E-GE3 TTI: SIHG47N60E-GE3 Vishay / Siliconix Availability: 8,000In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 8,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | - 30 V, 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SIHG052N60EF-GE3 TTI: SIHG052N60EF-GE3 Vishay / Siliconix Availability: 1,950In StockMOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 1,950In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 48 A | 52 mOhms | - 30 V, 30 V | 5 V | 67 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
270In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | - 20 V, 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
240In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 52 A | 73 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube |