MOSFETs
18,730 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI1401EDH-T1-GE3 TTI: SI1401EDH-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -12V Vds 10V Vgs SC70-6 | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-BE3 SI1401EDH-GE3 | |||
Mfr: RUC002N05T116 TTI: RUC002N05T116 ROHM Semiconductor Availability: 36,000In StockMOSFETs Ultra Lo Vtg 1.2V drive Nch MOSFET | 36,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 1 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | RUC002N05 | |||||
Mfr: IRFZ44PBF-BE3 TTI: IRFZ44PBF-BE3 Vishay / Siliconix Availability: 1,300In StockMOSFETs TO220 N-CH 60V 50A | 1,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF | ||||
Mfr: SI1308EDL-T1-GE3 TTI: SI1308EDL-T1-GE3 Vishay Semiconductors Availability: 87,000In Stock15,000 On Order Expected 17-Jul-28 MOSFETs 30V Vds 12V Vgs SC70-3 | 87,000In Stock15,000 On Order Expected 17-Jul-28 | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 1.5 A | 132 mOhms | 12 V | 1.5 V | 2.7 nC | - 55 C | + 150 C | 400 mW | Enhancement | TrenchFET | Reel | SI1308EDL-T1-BE3 SI1304BDL-T1-GE3 SI1300BDL-T1-GE3 | |||
Mfr: IRF9Z34STRLPBF TTI: IRF9Z34STRLPBF Vishay Semiconductors Availability: 20,000In StockMOSFETs P-Chan 60V 18 Amp | 20,000In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
Mfr: SSM3J338R,LF TTI: SSM3J338R,LF Toshiba Availability: 6,000In StockMOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A | 6,000In Stock | Si | SMD/SMT | SOT-23F | P-Channel | 1 Channel | 12 V | 6 A | 17.6 mOhms | 8 V | 300 mV | + 150 C | 1 W | Enhancement | U-MOSVII | Reel | ||||||
Mfr: SIDR668ADP-T1-RE3 TTI: SIDR668ADP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs N-Channel 100 V (D-S) MOSFET, PowerPAK SO-8DC | 12,000In Stock | Si | SMD/SMT | SO-8DC | N-Channel | 1 Channel | 100 V | 104 A | 4.8 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI3443DDV-T1-BE3 TTI: SI3443DDV-T1-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TSOP6 P-CH 20V 4A | 3,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 4 A | 90 mOhms | 12 V | 1.5 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | Reel | SI3443DDV-T1-GE3 | ||||
Mfr: IRFR9120PBF TTI: IRFR9120PBF Vishay Semiconductors Availability: 32,925In StockMOSFETs P-Chan 100V 5.6 Amp | 32,925In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
250In Stock650 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | ||||||
300In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | |||||
Mfr: IRF510SPBF TTI: IRF510SPBF Vishay Semiconductors Availability: 1,700In StockMOSFETs N-Chan 100V 5.6 Amp | 1,700In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: IRF840ASTRLPBF TTI: IRF840ASTRLPBF Vishay Semiconductors Availability: 12,000In StockMOSFETs N-Chan 500V 8.0 Amp | 12,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IXTP76P10T TTI: IXTP76P10T IXYS Availability: 150In Stock200 On Order Expected 14-Dec-26 MOSFETs TO220 100V 76A P-CH TRENCH | 150In Stock200 On Order Expected 14-Dec-26 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 76 A | 24 mOhms | 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
Mfr: IRF840LCPBF TTI: IRF840LCPBF Vishay Semiconductors Availability: 550In StockMOSFETs TO220 500V 8A N-CH MOSFET | 550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840LCPBF-BE3 | ||||
Mfr: IRF740ASPBF TTI: IRF740ASPBF Vishay Semiconductors Availability: 3,000In StockMOSFETs N-Chan 400V 10 Amp | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 2 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SUM110P04-05-E3 TTI: SUM110P04-05-E3 Vishay Semiconductors Availability: 2,400In StockMOSFETs 40V 110A 375W | 2,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 110 A | 5 mOhms | 20 V | 2 V | 185 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3932DV-T1-GE3 TTI: SI3932DV-T1-GE3 Vishay Semiconductors Availability: 39,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 39,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | |||
Mfr: SIS890DN-T1-GE3 TTI: SIS890DN-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock6,000 On Order Expected 19-Feb-30 MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock6,000 On Order Expected 19-Feb-30 | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 30 A | 19.5 mOhms | 20 V | 1.5 V | 29 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SIS890DN-GE3 | |||
Mfr: RJU003N03FRAT106 TTI: RJU003N03FRAT106 ROHM Semiconductor Availability: 225,000In StockMOSFETs 2.5V Drive N-Ch AEC-Q101 | 225,000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 300 mA | 1.1 Ohms | 12 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | Reel | RJU003N03FRA | ||||
Mfr: TPH2R608NH,L1Q TTI: TPH2R608NH,L1Q Toshiba Availability: 15,000In StockMOSFETs Power MOSFET N-Channel Single | 15,000In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 75 V | 168 A | 2.6 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: IRF640SPBF TTI: IRF640SPBF Vishay Semiconductors Availability: 3,350In StockMOSFETs N-Chan 200V 18 Amp | 3,350In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 20,000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 20,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: IRF830APBF-BE3 TTI: IRF830APBF-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO220 500V 5A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | 30 V | 4.5 V | 24 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830APBF | ||||
450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube |