N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR876BDP-T1-RE3 TTI: SIR876BDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT669 100V 51.4A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 100 V | 51.4 A | 12.3 mOhms | 20 V | 2.4 V | 65 nC | - 55 C | + 150 C | 71.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM90100E-GE3 TTI: SUM90100E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO263 200V 150A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 150 A | 12.9 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Bulk | ||||
Mfr: SIR188LDP-T1-RE3 TTI: SIR188LDP-T1-RE3 Vishay Availability: 0In StockMOSFETs PPAKSO8 N-CH 60V 25.8A | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 60 V | 93.6 A | 3.75 mOhms | 10 V | 2.5 V | 34.6 nC | - 55 C | + 150 C | Enhancement | PowerPAK | Reel | |||||
Mfr: SIR5708DP-T1-RE3 TTI: SIR5708DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs SOT669 150V 33.8A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: SIR5710DP-T1-RE3 TTI: SIR5710DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs SOT669 150V 26.8A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
Mfr: RQ5E030AJTCL TTI: RQ5E030AJTCL ROHM Semiconductor Availability: 0In StockMOSFETs Nch 30V 3Ad Si MOSFET | 0In Stock | Si | SMD/SMT | SOT-346-3 | N-Channel | 1 Channel | 30 V | 3 A | 75 mOhms | 12 V | 1.5 V | 2.1 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RQ5E030AJ | ||||
Mfr: RF4L070BGTCR TTI: RF4L070BGTCR ROHM Semiconductor Availability: 0In StockMOSFETs DFN2020 N-CH 60V 7A | 0In Stock | Si | SMD/SMT | DFN-2020-8 | N-Channel | 1 Channel | 60 V | 7 A | 27 mOhms | 20 V | 2.5 V | 7.6 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RF4L070BG | ||||
Mfr: SIDR578EP-T1-RE3 TTI: SIDR578EP-T1-RE3 Vishay Availability: 0In StockMOSFETs SOT669 150V 78A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 78 A | 8.8 mOhms | 20 V | 4 V | 32.5 nC | - 55 C | + 175 C | 150 W | Enhancement | ||||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 190 mOhms | 20 V | 3.9 V | 87 nC | - 55 C | + 150 C | 125 W | Enhancement | CoolMOS | Box | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 55 V | 64 A | 13 mOhms | - 55 C | + 175 C | 130 W | Enhancement | Tube | |||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | 20 V | 5.5 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube | |||||
Mfr: SUP70060E-GE3 TTI: SUP70060E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 131 A | 4.8 mOhms | 20 V | 2 V | 81 nC | - 55 C | + 175 C | 200 W | Enhancement | ThunderFET | Tube | ||||
Mfr: SIHB12N50E-GE3 TTI: SIHB12N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 550 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | |||||
Mfr: SIR696DP-T1-GE3 TTI: SIR696DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 125V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 125 V | 60 A | 11.5 mOhms | 20 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHP35N60EF-GE3 TTI: SIHP35N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 32 A | 97 mOhms | 30 V | 2 V | 134 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 8 A | 450 mOhms | 30 V | 3 V | 11 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 850 V | 14 A | 550 mOhms | 30 V | 3.5 V | 30 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | |||||
Mfr: TPH6R004PL,LQ TTI: TPH6R004PL,LQ Toshiba Availability: 0In StockMOSFETs N-Ch 40V 2100pF 30nC 87A 81W | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 87 A | 6 mOhms | 20 V | 2.4 V | 30 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SIRA84DP-T1-GE3 TTI: SIRA84DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | - 16 V, 20 V | 2.4 V | 25 nC | - 55 C | + 150 C | 34.7 W | TrenchFET, PowerPAK | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-563-6 | N-Channel | 2 Channel | 20 V | 200 mA | 1.2 Ohms | 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | EM6K7 | ||||||
Mfr: SI5458DU-T1-GE3 TTI: SI5458DU-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 41 mOhms | 20 V | 1.2 V | 9 nC | - 55 C | + 150 C | 10.4 W | Enhancement | TrenchFET | Reel | SI5458DU-GE3 | |||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | 20 V | 1.2 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-E3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 150 V | 102 A | 18 mOhms | HiPerFET | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 2.4 A | 7.5 Ohms | 20 V | 2.5 V | 37 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 50 A | 60 mOhms | 30 V | 5 V | 78 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube |