Si - MOSFETs
17,626 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | 20 V | 2 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
Mfr: SI7149ADP-T1-GE3 TTI: SI7149ADP-T1-GE3 Vishay Semiconductors Availability: 0In Stock24,000 On Order Expected 18-Oct-27 MOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 0In Stock24,000 On Order Expected 18-Oct-27 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | 25 V | 2.5 V | 90 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR500DP-T1-RE3 TTI: SIR500DP-T1-RE3 Vishay / Siliconix Availability: 0In Stock9,000 On Order Expected 19-Jan-27 MOSFETs PPAKSO8 N-CH 30V 85.9A | 0In Stock9,000 On Order Expected 19-Jan-27 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 350.8 A | 470 uOhms | - 12 V, 16 V | 2.2 V | 120 nC | - 55 C | + 150 C | 104.1 W | Enhancement | TrenchFET | Reel | ||||
Mfr: RY7P250BMTBC TTI: RY7P250BMTBC ROHM Semiconductor Availability: 0In StockMOSFETs DFN8080 100V 300A N CHAN | 0In Stock | Si | SMD/SMT | DFN8080-8 | N-Channel | 1 Channel | 100 V | 300 A | 1.86 mOhms | 20 V | 4 V | 170 nC | - 55 C | + 175 C | 340 W | Enhancement | Reel | |||||
Mfr: SISH536DN-T1-GE3 TTI: SISH536DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 30V 24.7A | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 67.4 A | 3.25 mOhms | - 12 V, 16 V | 2.2 V | 16.6 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: RD3U041AAFRATL TTI: RD3U041AAFRATL ROHM Semiconductor Availability: 0In Stock5,000 On Order Expected 30-Dec-30 MOSFETs TO252 250V 4.1A N-CH MOSFET | 0In Stock5,000 On Order Expected 30-Dec-30 | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 250 V | 4 A | 1.3 Ohms | 30 V | 5.5 V | 8.5 nC | - 55 C | + 150 C | 29 W | Enhancement | Reel | RD3U041AAFRA | ||||
Mfr: SIS990DN-T1-GE3 TTI: SIS990DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 12.1 A | 85 mOhms | 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: TPN11006PL,LQ TTI: TPN11006PL,LQ Toshiba Availability: 0In Stock6,000 On Order Expected 29-Oct-26 MOSFETs POWER MOSFET TRANSISTOR | 0In Stock6,000 On Order Expected 29-Oct-26 | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 54 A | 11.4 mOhms | 20 V | 1.5 V | 17 nC | - 55 C | + 175 C | 61 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: TK3R3A06PL,S4X TTI: TK3R3A06PL,S4X Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=42W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 80 A | 4.9 mOhms | 20 V | 2.5 V | 71 nC | - 55 C | + 175 C | 42 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SI8472DB-T2-E1 TTI: SI8472DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 1 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 4.5 A | 44 mOhms | 8 V | 400 mV | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4459ADY-T1-GE3 TTI: SI4459ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 29 A | 5 mOhms | 20 V | 1 V | 129 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4459ADY-GE3 | |||
Mfr: SIS410DN-T1-GE3 TTI: SIS410DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS410DN-GE3 | |||
0In Stock6,000 On Order Expected 25-Sep-26 | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 30 V | 200 mA | 1.4 Ohms | 20 V | 2.5 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | UM6J1N | ||||||
Mfr: SISA24DN-T1-GE3 TTI: SISA24DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 60A Id 17.2nC Qg Typ. | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 25 V | 60 A | 1.15 mOhms | - 16 V, 20 V | 1 V | 55 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFBE20PBF-BE3 TTI: IRFBE20PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 1.8A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBE20PBF | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Trench | Reel | |||||
Mfr: SI7415DN-T1-E3 TTI: SI7415DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 5.7 A | 65 mOhms | 20 V | 3 V | 25 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7415DN-E3 | |||
Mfr: SI2312CDS-T1-GE3 TTI: SI2312CDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock15,000 On Order Expected 10-Jun-27 MOSFETs 20V Vds 8V Vgs SOT-23 | 0In Stock15,000 On Order Expected 10-Jun-27 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3 | |||
Mfr: SI7858BDP-T1-GE3 TTI: SI7858BDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 12 V | 40 A | 2.5 mOhms | 8 V | 1 V | 56 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SSM3K361R,LXHF TTI: SSM3K361R,LXHF Toshiba Availability: 0In StockMOSFETs N Channel 100V 3.5A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | - 20 V, 10 V | 2.5 V | 3.2 nC | - 55 C | + 175 C | 2.4 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: IRLL110TRPBF-BE3 TTI: IRLL110TRPBF-BE3 Vishay / Siliconix Availability: 0In Stock50,000 On Order Expected 03-Oct-28 MOSFETs SOT223 100V 1.5A N-CH MOSFET | 0In Stock50,000 On Order Expected 03-Oct-28 | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 16 A | 73 mOhms | 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||||
Mfr: SIHLL110TR-GE3 TTI: SIHLL110TR-GE3 Vishay / Siliconix Availability: 0In Stock2,500 On Order Expected 17-Feb-27 MOSFETs 100V Vds 20V Vgs SOT-223 | 0In Stock2,500 On Order Expected 17-Feb-27 | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 10 V | 1 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
Mfr: RQ6L020SPTCR TTI: RQ6L020SPTCR ROHM Semiconductor Availability: 0In StockMOSFETs Pch -60V 2A 1.25W SOT-457T | 0In Stock | Si | SMD/SMT | SOT-457-6 | P-Channel | 1 Channel | 60 V | 2 A | 210 mOhms | 20 V | 3 V | 7.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6L020SP | ||||
Mfr: SI7469ADP-T1-RE3 TTI: SI7469ADP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAKSO8 P-CH 80V 7.4A | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 46 A | 19.3 mOhms | 20 V | 2.6 V | 19.3 nC | - 55 C | + 150 C | 73.5 W | Enhancement | TrenchFET | Reel |