MOSFETs
18,730 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI2302CDS-T1-E3 TTI: SI2302CDS-T1-E3 Vishay Semiconductors Availability: 0In Stock6,000 On Order Expected 18-Jun-29 MOSFETs 20V Vds 8V Vgs SOT-23 | 0In Stock6,000 On Order Expected 18-Jun-29 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.6 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 710 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-E3 | |||
Mfr: SI4599DY-T1-GE3 TTI: SI4599DY-T1-GE3 Vishay Semiconductors Availability: 0In Stock5,000 On Order Expected 27-Dec-28 MOSFETs -40V Vds 20V Vgs SO-8 N&P PAIR | 0In Stock5,000 On Order Expected 27-Dec-28 | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 5.8 A, 6.8 A | 35.5 mOhms, 45 mOhms | 20 V | 1.2 V, 1.4 V | 11.7 nC, 25 nC | - 55 C | + 150 C | 3 W, 3.1 W | Enhancement | TrenchFET | Reel | SI4599DY-GE3 | |||
Mfr: SI4532CDY-T1-GE3 TTI: SI4532CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 N&P PAIR | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 30 V | 4.3 A, 6 A | 47 mOhms, 89 mOhms | 20 V | 1 V | 6 nC, 7.8 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI4532CDY-GE3 | |||
Mfr: SIR440DP-T1-GE3 TTI: SIR440DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.55 mOhms | 20 V | 1 V | 150 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR440DP-GE3 | |||
Mfr: IXTP6N50D2 TTI: IXTP6N50D2 IXYS Availability: 0In Stock300 On Order Expected 11-Nov-26 MOSFETs N-CH MOSFETS (D2) 500V 6A | 0In Stock300 On Order Expected 11-Nov-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
Mfr: SI2347DS-T1-BE3 TTI: SI2347DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 P-CH 30V 3.8A | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2347DS-T1-GE3 | ||||
Mfr: IRF540PBF-BE3 TTI: IRF540PBF-BE3 Vishay / Siliconix Availability: 0In Stock10,000 On Order Expected MOSFETs TO220 100V 28A N-CH MOSFET | 0In Stock10,000 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF540PBF | ||||
Mfr: SI1012CR-T1-GE3 TTI: SI1012CR-T1-GE3 Vishay Semiconductors Availability: 0In Stock3,000 On Order Expected 06-Nov-28 MOSFETs 20V Vds 8V Vgs SC75A | 0In Stock3,000 On Order Expected 06-Nov-28 | Si | SMD/SMT | SC-75-3 | N-Channel | 1 Channel | 20 V | 600 mA | 396 mOhms | 8 V | 400 mV | 1.3 nC | - 55 C | + 150 C | 240 mW | Enhancement | TrenchFET | Reel | SI1012CR-GE3 | |||
Mfr: TK16A60W,S4VX TTI: TK16A60W,S4VX Toshiba Availability: 0In StockMOSFETs N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC | 0In Stock | Si | N-Channel | 1 Channel | DTMOSIV | Tube | ||||||||||||||||
Mfr: IXTT48P20P TTI: IXTT48P20P IXYS Availability: 0In Stock150 On Order Expected 18-Feb-27 MOSFETs -48.0 Amps -200V 0.085 Rds | 0In Stock150 On Order Expected 18-Feb-27 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 200 V | 48 A | 85 mOhms | 20 V | 4 V | 103 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube | |||||
Mfr: SISS71DN-T1-GE3 TTI: SISS71DN-T1-GE3 Vishay Semiconductors Availability: 0In Stock12,000 On Order Expected 24-Oct-29 MOSFETs -100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock12,000 On Order Expected 24-Oct-29 | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 100 V | 23 A | 47 mOhms | 20 V | 2.5 V | 30 nC | - 50 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SSM3J35AMFV,L3F TTI: SSM3J35AMFV,L3F Toshiba Availability: 0In Stock16,000 On Order Expected 19-Feb-27 MOSFETs LowON Res MOSFET ID=-.25A VDSS=-20V | 0In Stock16,000 On Order Expected 19-Feb-27 | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||
Mfr: SISF00DN-T1-GE3 TTI: SISF00DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SCD-8 | N-Channel | 2 Channel | 30 V | 60 A | 4.2 mOhms | - 16 V, 20 V | 2.1 V | 53 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHLL110TR-GE3 TTI: SIHLL110TR-GE3 Vishay / Siliconix Availability: 0In Stock2,500 On Order Expected 25-Nov-26 MOSFETs 100V Vds 20V Vgs SOT-223 | 0In Stock2,500 On Order Expected 25-Nov-26 | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 10 V | 1 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
Mfr: SIS990DN-T1-GE3 TTI: SIS990DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 12.1 A | 85 mOhms | 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: RD3U041AAFRATL TTI: RD3U041AAFRATL ROHM Semiconductor Availability: 0In Stock2,500 On Order Expected 30-Dec-30 MOSFETs TO252 250V 4.1A N-CH MOSFET | 0In Stock2,500 On Order Expected 30-Dec-30 | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 250 V | 4 A | 1.3 Ohms | 30 V | 5.5 V | 8.5 nC | - 55 C | + 150 C | 29 W | Enhancement | Reel | RD3U041AAFRA | ||||
Mfr: IRFBE20PBF-BE3 TTI: IRFBE20PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 1.8A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBE20PBF | ||||
Mfr: SSM3K361R,LXHF TTI: SSM3K361R,LXHF Toshiba Availability: 0In Stock6,000 On Order Expected 05-Feb-27 MOSFETs N Channel 100V 3.5A AECQ MOSFET | 0In Stock6,000 On Order Expected 05-Feb-27 | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | - 20 V, 10 V | 2.5 V | 3.2 nC | - 55 C | + 175 C | 2.4 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SISH536DN-T1-GE3 TTI: SISH536DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 30V 24.7A | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 67.4 A | 3.25 mOhms | - 12 V, 16 V | 2.2 V | 16.6 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISA24DN-T1-GE3 TTI: SISA24DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 60A Id 17.2nC Qg Typ. | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 25 V | 60 A | 1.15 mOhms | - 16 V, 20 V | 1 V | 55 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IXTA10P50P TTI: IXTA10P50P IXYS Availability: 0In Stock500 On Order Expected 13-Apr-27 MOSFETs -10.0 Amps -500V 1.000 Rds | 0In Stock500 On Order Expected 13-Apr-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: SIS410DN-T1-GE3 TTI: SIS410DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS410DN-GE3 | |||
Mfr: SI4459ADY-T1-GE3 TTI: SI4459ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 29 A | 5 mOhms | 20 V | 1 V | 129 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4459ADY-GE3 | |||
Mfr: SI7415DN-T1-E3 TTI: SI7415DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 5.7 A | 65 mOhms | 20 V | 3 V | 25 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7415DN-E3 | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 16 A | 73 mOhms | 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube |