N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIRA12DP-T1-GE3 TTI: SIRA12DP-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V 4.3mOhm@10V 25A N-Ch G-IV | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA12DP-GE3 | |||
Mfr: SI2306BDS-T1-BE3 TTI: SI2306BDS-T1-BE3 Vishay / Siliconix Availability: 12,000In StockMOSFETs SOT23 N-CH 30V 3.16A | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | 20 V | 3 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | Reel | SI2306BDS-T1-E3 | ||||
Mfr: PSMN6R0-30YLB,115 TTI: PSMN6R0-30YLB,115 Nexperia Availability: 12,000In StockMOSFETs PSMN6R0-30YLB/SOT669/LFPAK | 12,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 30 V | 71 A | 6.9 mOhms | 20 V | 1.95 V | 19 nC | - 55 C | + 175 C | 58 W | Enhancement | Reel | 934066006115 | ||||
Mfr: RSQ035N06HZGTR TTI: RSQ035N06HZGTR ROHM Semiconductor Availability: 12,000In StockMOSFETs SOT457 N-CH 60V 3.5A | 12,000In Stock | Si | SMD/SMT | SOT-457T-6 | N-Channel | 1 Channel | 60 V | 3.5 A | 70 mOhms | 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | AEC-Q101 | Reel | RSQ035N06HZG | |||
Mfr: SIHD12N50E-GE3 TTI: SIHD12N50E-GE3 Vishay / Siliconix Availability: 2,550In StockMOSFETs 500V Vds 30V Vgs DPAK (TO-252) | 2,550In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | |||||
Mfr: SI8424CDB-T1-E1 TTI: SI8424CDB-T1-E1 Vishay Semiconductors Availability: 3,000In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 1.6 x 1.6 | 3,000In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 10 A | 20 mOhms | 5 V | 350 mV | 40 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: TK3R3A06PL,S4X TTI: TK3R3A06PL,S4X Toshiba Availability: 950In Stock100 On Order Expected 05-Nov-26 MOSFETs TO-220SIS PD=42W 1MHz PWR MOSFET TRNS | 950In Stock100 On Order Expected 05-Nov-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 80 A | 4.9 mOhms | 20 V | 2.5 V | 71 nC | - 55 C | + 175 C | 42 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: IRFR430APBF TTI: IRFR430APBF Vishay Semiconductors Availability: 5,625In StockMOSFETs TO252 500V 5A N-CH MOSFET | 5,625In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.7 Ohms | 30 V | 2 V | 24 nC | - 55 C | + 150 C | 110 W | Enhancement | Tube | |||||
Mfr: RTL035N03TR TTI: RTL035N03TR ROHM Semiconductor Availability: 6,000In StockMOSFETs N-CH 30V 3.5A TUMT6 | 6,000In Stock | Si | SMD/SMT | SOT-363T-6 | N-Channel | 1 Channel | 30 V | 3.5 A | 56 mOhms | 12 V | 1.5 V | 4.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RTL035N03 | ||||
Mfr: IXTT16N20D2 TTI: IXTT16N20D2 IXYS Availability: 140In StockMOSFETs D2 Depletion Mode Power MOSFETs | 140In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 16 A | 73 mOhms | 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | |||||
Mfr: SSM3K7002KFU,LF TTI: SSM3K7002KFU,LF Toshiba Availability: 3,000In StockMOSFETs Small-signal MOSFET ID=0.4A VDSS=60V | 3,000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.05 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 700 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
Mfr: IXTH02N250 TTI: IXTH02N250 IXYS Availability: 150In StockMOSFETs High Voltage Power MOSFET; 2500V, 0.2A | 150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
Mfr: IRF510PBF-BE3 TTI: IRF510PBF-BE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs TO220 100V 5.6A N-CH MOSFET | 10,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: SISH892BDN-T1-GE3 TTI: SISH892BDN-T1-GE3 Vishay / Siliconix Availability: 21,000In StockMOSFETs PWRPK 100V 20A N-CH MOSFET | 21,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 20 A | 30.4 mOhms | 20 V | 2.4 V | 17.4 nC | - 55 C | + 150 C | 29 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4168DY-T1-GE3 TTI: SI4168DY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 5.7 mOhms | 20 V | 1 V | 44 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4168DY-GE3 | |||
Mfr: SI4840BDY-T1-GE3 TTI: SI4840BDY-T1-GE3 Vishay Semiconductors Availability: 7,500In StockMOSFETs 40V Vds 20V Vgs SO-8 | 7,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-GE3 | |||
Mfr: IXFH26N50P TTI: IXFH26N50P IXYS Availability: 6,060In Stock480 On Order Expected 09-Feb-27 MOSFETs HiPERFET Id26 BVdass500 | 6,060In Stock480 On Order Expected 09-Feb-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | 30 V | 3 V | 60 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
3,680In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 100 V | 48.5 A | 11 mOhms | 20 V | 4 V | 35 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube | ||||||
Mfr: SIHG065N60E-GE3 TTI: SIHG065N60E-GE3 Vishay Semiconductors Availability: 44,350In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 44,350In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | 30 V | 5 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: IRFR1N60ATRPBF TTI: IRFR1N60ATRPBF Vishay Semiconductors Availability: 2,000In StockMOSFETs N-Chan 600V 1.4 Amp | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | 30 V | 4 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRFR1N60ATRPBF-BE3 | ||||
270In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | 20 V | 3 V | 150 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIR120DP-T1-RE3 TTI: SIR120DP-T1-RE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 80V 24.7A | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 106 A | 3.55 mOhms | 20 V | 2 V | 62.5 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||
280In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 15 Ohms | 30 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | ||||||
Mfr: RQ6C050UNTR TTI: RQ6C050UNTR ROHM Semiconductor Availability: 3,000In StockMOSFETs 1.5V Drive Nch MOSFET | 3,000In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 20 V | 5 A | 30 mOhms | 10 V | 1 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6C050UN | ||||
Mfr: BUK7Y28-75B,115 TTI: BUK7Y28-75B,115 Nexperia Availability: 9,000In StockMOSFETs BUK7Y28-75B/SOT669/LFPAK | 9,000In Stock | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 75 V | 35.5 A | 23 mOhms | 20 V | 2 V | 21.2 nC | - 55 C | + 175 C | 85 W | Enhancement | Reel | 934063303115 |