Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI7469DP-T1-GE3 TTI: SI7469DP-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-GE3 | |||
Mfr: SI3437DV-T1-E3 TTI: SI3437DV-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -150V Vds 20V Vgs TSOP-6 | 6,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 150 V | 1.4 A | 750 mOhms | 20 V | 2 V | 12.2 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3437DV-T1-BE3 SI3437DV-E3 | |||
12,000In Stock | Si | SMD/SMT | SOT-363T-6 | N-Channel, P-Channel | 2 Channel | 20 V, 30 V | 1 A, 1.5 A | 240 mOhms, 390 mOhms | 12 V | 1.5 V, 2 V | 1.6 nC, 2.1 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | US6M2 | |||||
Mfr: SSM3K56FS,LF TTI: SSM3K56FS,LF Toshiba Availability: 6,000In StockMOSFETs N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF | 6,000In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 800 mA | 235 mOhms | 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
Mfr: SI1013CX-T1-GE3 TTI: SI1013CX-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs SC89-3 | 9,000In Stock | Si | SMD/SMT | P-Channel | 1 Channel | 20 V | 450 mA | 760 mOhms | 8 V | 1 V | 1.65 nC | - 55 C | + 150 C | 190 mW | Enhancement | TrenchFET | Reel | |||||
Mfr: SI2371EDS-T1-BE3 TTI: SI2371EDS-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT23 P-CH 30V 3.7A | 6,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2371EDS-T1-GE3 | ||||
Mfr: SI1416EDH-T1-BE3 TTI: SI1416EDH-T1-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT363 N-CH 30V 3.9A | 6,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-GE3 | |||
Mfr: SIR878BDP-T1-RE3 TTI: SIR878BDP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 42.5 A | 12 mOhms | 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRL640SPBF TTI: IRL640SPBF Vishay Semiconductors Availability: 1,500In StockMOSFETs N-Chan 200V 17 Amp | 1,500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRFP054PBF TTI: IRFP054PBF Vishay Semiconductors Availability: 21,500In StockMOSFETs TO247 N-CH 60V 70A | 21,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 14 mOhms | 20 V | 2 V | 160 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: SIA431DJ-T1-GE3 TTI: SIA431DJ-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 6,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 70 mOhms | 8 V | 850 mV | 60 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA431DJ-GE3 | |||
Mfr: SIDR668ADP-T1-RE3 TTI: SIDR668ADP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs N-Channel 100 V (D-S) MOSFET, PowerPAK SO-8DC | 12,000In Stock | Si | SMD/SMT | SO-8DC | N-Channel | 1 Channel | 100 V | 104 A | 4.8 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1401EDH-T1-GE3 TTI: SI1401EDH-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -12V Vds 10V Vgs SC70-6 | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-BE3 SI1401EDH-GE3 | |||
Mfr: SSM3J35AMFV,L3F TTI: SSM3J35AMFV,L3F Toshiba Availability: 48,000In StockMOSFETs LowON Res MOSFET ID=-.25A VDSS=-20V | 48,000In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||
Mfr: SI2374DS-T1-BE3 TTI: SI2374DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 N-CH 20V 4.5A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2374DS-T1-GE3 | ||||
Mfr: IRF9Z34STRLPBF TTI: IRF9Z34STRLPBF Vishay Semiconductors Availability: 16,000In StockMOSFETs P-Chan 60V 18 Amp | 16,000In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
Mfr: IRFR9210PBF TTI: IRFR9210PBF Vishay Semiconductors Availability: 600In StockMOSFETs TO252 200V 1.9A P-CH MOSFET | 600In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 1.9 A | 3 Ohms | 20 V | 4 V | 8.9 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
13,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 14 A | 280 mOhms | 20 V | 4 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF644PBF-BE3 | |||||
Mfr: IRFBC40PBF TTI: IRFBC40PBF Vishay Semiconductors Availability: 650In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF-BE3 | ||||
Mfr: SIR462DP-T1-GE3 TTI: SIR462DP-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 7.9 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR462DP-GE3 | |||
Mfr: IRFZ44PBF-BE3 TTI: IRFZ44PBF-BE3 Vishay / Siliconix Availability: 1,300In StockMOSFETs TO220 N-CH 60V 50A | 1,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF | ||||
21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 200 mA | 3.9 Ohms | 20 V | 1.1 V | 270 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: RUC002N05T116 TTI: RUC002N05T116 ROHM Semiconductor Availability: 27,000In StockMOSFETs Ultra Lo Vtg 1.2V drive Nch MOSFET | 27,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 1 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | RUC002N05 | |||||
Mfr: SI3437DV-T1-GE3 TTI: SI3437DV-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -150V Vds 20V Vgs TSOP-6 | 9,000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 150 V | 1.4 A | 750 mOhms | 20 V | 4 V | 8 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3437DV-T1-BE3 SI3437DV-GE3 | |||
Mfr: SSM3J338R,LF TTI: SSM3J338R,LF Toshiba Availability: 6,000In StockMOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A | 6,000In Stock | Si | SMD/SMT | SOT-23F | P-Channel | 1 Channel | 12 V | 6 A | 17.6 mOhms | 8 V | 300 mV | + 150 C | 1 W | Enhancement | U-MOSVII | Reel |