P-Channel - MOSFETs
1,959 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SQ4005EY-T1_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs P Ch -12Vds 8Vgs AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 12 V | 15 A | 13 mOhms | 8 V | 1 V | 29 nC | - 55 C | + 175 C | 6 W | Enhancement | AEC-Q101 | TrenchFET | Reel | SQ4005EY-T1_BE3 | ||
0In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.4 Ohms | 10 V | 1 V | + 150 C | 500 mW | Depletion | Reel | ||||||||
0In Stock | Si | SMD/SMT | DFN-8 | P-Channel | 1 Channel | 40 V | 40 A | 17.7 mOhms | - 20 V, 5 V | 2.5 V | 33 nC | - 55 C | + 175 C | 62 W | Enhancement | Reel | ||||||
Mfr: SQJ431EP-T2_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs RECOMMENDED ALT SQJ4 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 12 A | 213 mOhms | 20 V | 3.5 V | 106 nC | - 55 C | + 175 C | 83 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: RTQ035P02FHATR TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineMOSFETs Pch -20V Vds -3.5A 0.08Rds(on) 10.5Qg | Not Available Online | Si | SMD/SMT | SOT-457T-6 | P-Channel | 1 Channel | 20 V | 3.5 A | 65 mOhms | 12 V | 2 V | 10.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | AEC-Q101 | Reel | RTQ035P02FHA | |||
0In Stock | Si | SMD/SMT | SOT-363T-6 | P-Channel | 2 Channel | 12 V | 2 A | 105 mOhms | 8 V | 1 V | 7.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | US6J12 | |||||
0In Stock | Si | SMD/SMT | SOT-96-1-8 | P-Channel | 1 Channel | 20 V | 4.1 A | 48 mOhms | 12 V | 1 V | 13 nC | - 55 C | + 150 C | 6.25 W | Enhancement | Reel | 934064772125 | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 93 A | 43.2 mOhms | 20 V | 2.5 V | 220 nC | - 55 C | + 175 C | 375 W | Enhancement | AEC-Q101 | ||||||
0In Stock | Si | SMD/SMT | CST3C-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.4 Ohms | 10 V | 1 V | + 150 C | 500 mW | Depletion | Reel | ||||||||
Mfr: SSM6P47NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig MOS 2 in 1 P-Ch -4A -20V 8V GS | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 2 Channel | 20 V | 4 A | 242 mOhms | 8 V | 1 W | U-MOSVI | Reel | |||||||||
0In Stock | Si | SMD/SMT | PowerPAK SC-70-6 | P-Channel | 1 Channel | 30 V | 31 A | 0.013 Ohms | - 16 V, 20 V | 2.5 V | 20 nC | - 55 C | + 150 C | 19 W | Enhancement | Reel | ||||||
Mfr: NX3008PBK,215 TTI: Not Assigned Nexperia Availability: Not Available OnlineMOSFETs NX3008PBK/SOT23/TO-236AB | Not Available Online | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 230 mA | 4.1 Ohms | 8 V | 600 mV | 550 pC | - 55 C | + 150 C | 420 mW | Enhancement | Reel | 934065642215 | ||||
0In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 20 V | 1 A | 200 mOhms | 8 V | 650 mV | 2.6 nC | - 55 C | + 150 C | 360 mW | Enhancement | Reel | 934064763115 | |||||
Mfr: SQD90P04-9M4L_GE3 TTI: Not Assigned Vishay / Siliconix Availability: Not Available OnlineMOSFETs P-Channel 40V AEC-Q101 Qualified | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 7.5 mOhms | 20 V | 2.5 V | 155 nC | - 55 C | + 175 C | 136 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
Mfr: SQD50P08-25L_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs 80V 50A 136W AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 80 V | 50 A | 25 mOhms | 20 V | 1.5 V | 91 nC | - 55 C | + 175 C | 136 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
Mfr: SSM3J132TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID -5.4A, VDSS -12V | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 12 V | 5.4 A | 14 mOhms | 6 V | 1 V | 33 nC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TJ10S04M3L(T6L1,NQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch MOS 33.8 mOhm 10V 10uA 2.0 to 3.0V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 10 A | 33.8 mOhms | - 20 V, 10 V | 3 V | 19 nC | - 55 C | + 175 C | 27 W | Enhancement | AEC-Q100 | U-MOSVI | Reel | |||
Mfr: TPC8133,LQ(S TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch -40V FET 1650pF -9A 1.9W | 0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 40 V | 9 A | 18 mOhms | 1.9 W | U-MOSVI | Reel | ||||||||||
Mfr: SQJ407EP-T1_GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds PowerPAK AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | P-Channel | 1 Channel | 30 V | 60 A | 4.4 mOhms | 20 V | 2 V | 169 nC | - 55 C | + 175 C | 68 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
0In Stock | Si | SMD/SMT | HPLF-5 | P-Channel | 1 Channel | 40 V | 120 A | 5.9 mOhms | - 20 V, 5 V | 2.5 V | 96 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | P-Channel | 1 Channel | 60 V | 36 A | 25 mOhms | 20 V | 2.5 V | 65 nC | - 55 C | + 175 C | 68 W | Enhancement | Reel | SQJ457EP-T1_GE3 | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 80 V | 48 A | 0.028 Ohms | 20 V | 3.5 V | 95 nC | - 55 C | + 175 C | 136 W | Enhancement | AEC-Q101 | Tube | |||||
Mfr: SQM40031EL_GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockMOSFETs P Ch -40V Vds AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 120 A | 2.5 mOhms | 20 V | 2.5 V | 800 nC | - 55 C | + 175 C | 375 W | Enhancement | AEC-Q101 | TrenchFET | Reel | |||
0In Stock | Si | SMD/SMT | DFN-2020-8 | P-Channel | 1 Channel | 20 V | 10 A | 15.6 mOhms | 8 V | 1.2 V | 23.5 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RF4C100BC | |||||
Mfr: TJ40S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 68W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 40 A | 9.1 mOhms | - 20 V, 10 V | 3 V | 83 nC | + 175 C | 68 W | Enhancement | AEC-Q101 | Reel | TJ40S04M3L,LXHQ(O |