N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 80 V | 265 A | 1.8 mOhms | 20 V | 4 V | 81 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | ||||||
Mfr: RW4E075AJTCL1 TTI: RW4E075AJTCL1 ROHM Semiconductor Availability: 0In StockMOSFETs DFN1616 N-CH 30V 7.5A | 0In Stock | Si | SMD/SMT | DFN-1616-7T | N-Channel | 1 Channel | 30 V | 7.5 A | 26 mOhms | 12 V | 1.5 V | 6.3 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | RW4E075AJ | ||||
Mfr: SIZ340BDT-T1-GE3 TTI: SIZ340BDT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAIR3X3 2NCH 30V 16.9A | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3 | N-Channel | 2 Channel | 30 V | 36 A, 69.3 A | 4.31 mOhms, 8.56 mOhms | - 16 V, 20 V | 2.4 V | 8.4 nC, 15.7 nC | - 55 C | + 150 C | 16.7 W, 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: R6014YNX3C16 TTI: R6014YNX3C16 ROHM Semiconductor Availability: 0In StockMOSFETs TO220 650V 42A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220AB-3 | N-Channel | 1 Channel | 600 V | 42 A | 260 mOhms | 30 V | 6 V | 20 nC | - 55 C | + 150 C | 132 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 76 A | 39 mOhms | 30 V | 3 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRF540STRRPBF TTI: IRF540STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 28A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SI5922DU-T1-GE3 TTI: SI5922DU-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Ch 30V Vds 4.7nC Qg Typ | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 30 V | 6 A | 19.2 mOhms | - 16 V, 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 10.4 W | Enhancement | Reel | |||||
Mfr: SI5948DU-T1-GE3 TTI: SI5948DU-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 40 V | 6 A | 82 mOhms | 20 V | 2.5 V | 5 nC | - 55 C | + 150 C | 7 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | 30 V | 2.5 V | 44.5 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
Mfr: IRFBF20PBF TTI: IRFBF20PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 900V 1.7A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBF20PBF-BE3 | ||||
Mfr: SSM3K17FU,LF TTI: SSM3K17FU,LF Toshiba Availability: Not Available OnlineMOSFETs LowON Res MOSFET ID=0.1A VDSS=50V | Not Available Online | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 50 V | 100 mA | 20 Ohms | 7 V | 900 mV | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSV | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 14 A | 550 mOhms | 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | 30 V | 2.5 V | 82 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 16 A | 600 mOhms | 30 V | 5 V | 71 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | 20 V | 5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 14 A | 450 mOhms | 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHV | Tube | |||||
Mfr: IRFBC40SPBF TTI: IRFBC40SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 600V 6.2 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 60 nC | - 55 C | + 150 C | 130 W | Enhancement | Tube | |||||
Mfr: IXFK240N15T2 TTI: IXFK240N15T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 240 A | 5.2 mOhms | 20 V | 2.5 V | 460 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFX360N10T TTI: IXFX360N10T IXYS Availability: 0In StockMOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 360 A | 2.9 mOhms | 20 V | 2.5 V | 525 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 62 mOhms | 30 V | 3 V | 135 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SIHB25N50E-GE3 TTI: SIHB25N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 550 V | 26 A | 145 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: IXFX100N65X2 TTI: IXFX100N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/100A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 100 A | 30 mOhms | 30 V | 2.7 V | 180 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHG21N60EF-GE3 TTI: SIHG21N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 21 A | 176 mOhms | 30 V | 2 V | 84 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube |