Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock3,000 On Order Expected 11-Feb-27 | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 30 V | 200 mA | 1.4 Ohms | 20 V | 2.5 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | UM6J1N | ||||||
Mfr: SI7858BDP-T1-GE3 TTI: SI7858BDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 12 V | 40 A | 2.5 mOhms | 8 V | 1 V | 56 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
Mfr: BSS670T116 TTI: BSS670T116 ROHM Semiconductor Availability: 0In StockMOSFETs SOT-23 60V .65A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 650 mA | 680 mOhms | 20 V | 2 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | BSS670 | |||||
Mfr: SI4459ADY-T1-GE3 TTI: SI4459ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 29 A | 5 mOhms | 20 V | 1 V | 129 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4459ADY-GE3 | |||
Mfr: SSM3K361R,LXHF TTI: SSM3K361R,LXHF Toshiba Availability: 0In Stock6,000 On Order Expected 05-Feb-27 MOSFETs N Channel 100V 3.5A AECQ MOSFET | 0In Stock6,000 On Order Expected 05-Feb-27 | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | - 20 V, 10 V | 2.5 V | 3.2 nC | - 55 C | + 175 C | 2.4 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SIS410DN-T1-GE3 TTI: SIS410DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS410DN-GE3 | |||
Mfr: RY7P250BMTBC TTI: RY7P250BMTBC ROHM Semiconductor Availability: 0In StockMOSFETs DFN8080 100V 300A N CHAN | 0In Stock | Si | SMD/SMT | DFN8080-8 | N-Channel | 1 Channel | 100 V | 300 A | 1.86 mOhms | 20 V | 4 V | 170 nC | - 55 C | + 175 C | 340 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3 | ||||
Mfr: IXTY01N100D TTI: IXTY01N100D IXYS Availability: 0In Stock420 On Order Expected 09-Jun-27 MOSFETs MOSFET N-CH DEPLETN 1000V 100MA TO-25 | 0In Stock420 On Order Expected 09-Jun-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | 20 V | 4.5 V | 5.8 nC | - 55 C | + 150 C | 1.1 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 190 mOhms | 30 V | 2.5 V | 93 nC | - 55 C | + 150 C | 156 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXTX46N50L TTI: IXTX46N50L IXYS Availability: 0In Stock130 On Order Expected 11-Mar-27 MOSFETs 44 Amps 500V | 0In Stock130 On Order Expected 11-Mar-27 | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 500 V | 46 A | 160 mOhms | 30 V | 6 V | 260 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||
Mfr: SIR158DP-T1-GE3 TTI: SIR158DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 1.8 mOhms | 20 V | 1.2 V | 130 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR158DP-GE3 | |||
Mfr: SI7464DP-T1-GE3 TTI: SI7464DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 1.8 A | 240 mOhms | 20 V | 2 V | 18 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI7464DP-GE3 | |||
Mfr: CPC5602CTR TTI: CPC5602CTR IXYS Availability: 0In Stock2,000 On Order Expected 12-Jul-27 MOSFETs N Ch Dep Mode FET 350V | 0In Stock2,000 On Order Expected 12-Jul-27 | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 350 V | 5 mA | 14 Ohms | 20 V | 3.6 V | - 40 C | + 85 C | 2.5 W | Depletion | Clare | Reel | |||||
Mfr: IRF9630PBF TTI: IRF9630PBF Vishay Semiconductors Availability: 0In Stock1,000 On Order Expected 02-Nov-26 MOSFETs TO220 200V 6.5A P-CH MOSFET | 0In Stock1,000 On Order Expected 02-Nov-26 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF-BE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-GE3 | ||||
Mfr: IRF9540STRLPBF TTI: IRF9540STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 19 Amp | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 33 mOhms, 33 mOhms | 8 V | 1 V | 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA975DJ-GE3 | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 4.5 kV | 3 A | 80 Ohms | 20 V | 3.5 V | 46 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | ||||||
Mfr: SSM6L39TU,LF TTI: SSM6L39TU,LF Toshiba Availability: 0In Stock3,000 On Order Expected 12-Feb-27 MOSFETs Small Signal MOSFET | 0In Stock3,000 On Order Expected 12-Feb-27 | Si | SMD/SMT | UF-6 | N-Channel, P-Channel | 2 Channel | 20 V | 1.5 A, 1.6 A | 247 mOhms, 430 mOhms | - 8 V, 10 V | 300 mV, 350 mV | 7.5 nC, 6.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||
Mfr: IXTA1N200P3HV TTI: IXTA1N200P3HV IXYS Availability: 0In StockMOSFETs 2000V/1A HV Power MOSFET, TO-263HV | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 2 kV | 1 A | 40 Ohms | 20 V | 2 V | 23.5 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: RF7L120BKFRATCR TTI: RF7L120BKFRATCR ROHM Semiconductor Availability: 0In Stock9,000 On Order Expected 30-Dec-30 MOSFETs DFN2020 N-CH 60V 12A | 0In Stock9,000 On Order Expected 30-Dec-30 | Si | SMD/SMT | DFN2020-8 | N-Channel | 1 Channel | 60 V | 12 A | 31 mOhms | 20 V | 2.5 V | 7.3 nC | - 55 C | + 150 C | 23 W | Enhancement | Reel | |||||
Mfr: SI2333DDS-T1-GE3 TTI: SI2333DDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 6 A | 23 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2333DDS-T1-BE3 | |||
Mfr: SISH617DN-T1-GE3 TTI: SISH617DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 12.3 mOhms | 25 V | 2.5 V | 59 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI9933CDY-T1-GE3 TTI: SI9933CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 4 A | 58 mOhms | 12 V | 600 mV | 17 nC | - 50 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9933CDY-GE3 |