Si - MOSFETs
17,626 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM3J35AMFV,L3F TTI: SSM3J35AMFV,L3F Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.25A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||
Mfr: SI1308EDL-T1-GE3 TTI: SI1308EDL-T1-GE3 Vishay Semiconductors Availability: 0In Stock30,000 On Order Expected 08-Sep-26 MOSFETs 30V Vds 12V Vgs SC70-3 | 0In Stock30,000 On Order Expected 08-Sep-26 | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 1.5 A | 132 mOhms | 12 V | 1.5 V | 2.7 nC | - 55 C | + 150 C | 400 mW | Enhancement | TrenchFET | Reel | SI1308EDL-T1-BE3 SI1304BDL-T1-GE3 SI1300BDL-T1-GE3 | |||
Mfr: IRFS9N60ATRLPBF TTI: IRFS9N60ATRLPBF Vishay Semiconductors Availability: 0In Stock1,600 On Order Expected 27-Mar-28 MOSFETs TO263 600V 9.2A N-CH MOSFET | 0In Stock1,600 On Order Expected 27-Mar-28 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | |||||
Mfr: SISF00DN-T1-GE3 TTI: SISF00DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SCD-8 | N-Channel | 2 Channel | 30 V | 60 A | 4.2 mOhms | - 16 V, 20 V | 2.1 V | 53 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SSM3J338R,LF TTI: SSM3J338R,LF Toshiba Availability: 0In Stock6,000 On Order Expected 21-Sep-26 MOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A | 0In Stock6,000 On Order Expected 21-Sep-26 | Si | SMD/SMT | SOT-23F | P-Channel | 1 Channel | 12 V | 6 A | 17.6 mOhms | 8 V | 300 mV | + 150 C | 1 W | Enhancement | U-MOSVII | Reel | ||||||
Mfr: IXTP6N50D2 TTI: IXTP6N50D2 IXYS Availability: 0In Stock300 On Order Expected 11-Nov-26 MOSFETs N-CH MOSFETS (D2) 500V 6A | 0In Stock300 On Order Expected 11-Nov-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
Mfr: SI4850EY-T1-E3 TTI: SI4850EY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | 20 V | 1 V | 27 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-E3 | |||
Mfr: EM6K34T2CR TTI: EM6K34T2CR ROHM Semiconductor Availability: 0In StockMOSFETs 0.9V Drive Nch MOSFET | 0In Stock | Si | SMD/SMT | SOT-563-6 | N-Channel | 2 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | Reel | EM6K34 | |||||
Mfr: IXTT88N30P TTI: IXTT88N30P IXYS Availability: 0In Stock270 On Order Expected 10-Sep-26 MOSFETs 88 Amps 300V 0.04 Rds | 0In Stock270 On Order Expected 10-Sep-26 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | ||||
Mfr: SI7115DN-T1-GE3 TTI: SI7115DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 8.9 A | 295 mOhms | 20 V | 4 V | 27.5 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7115DN-GE3 | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | 20 V | 4.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Tube | ||||||
Mfr: SIR426DP-T1-GE3 TTI: SIR426DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 30 A | 10.5 mOhms | 20 V | 1.2 V | 31 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR426DP-GE3 | |||
Mfr: SI4455DY-T1-GE3 TTI: SI4455DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 150 V | 2.8 A | 315 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4455DY-GE3 | |||
Mfr: SI5513CDC-T1-GE3 TTI: SI5513CDC-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 30 V | 3.7 A, 4 A | 55 mOhms, 150 mOhms | 12 V | 600 mV, 1.5 V | 4.2 nC, 5.6 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5509DC-T1-GE3 | |||
Mfr: SI2318CDS-T1-BE3 TTI: SI2318CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 N-CH 40V 4.3A | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2318CDS-T1-GE3 | ||||
Mfr: RJU003N03FRAT106 TTI: RJU003N03FRAT106 ROHM Semiconductor Availability: 0In Stock60,000 On Order Expected 04-Dec-26 MOSFETs 2.5V Drive N-Ch AEC-Q101 | 0In Stock60,000 On Order Expected 04-Dec-26 | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 300 mA | 1.1 Ohms | 12 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | Reel | RJU003N03FRA | ||||
Mfr: IXTY08N100D2 TTI: IXTY08N100D2 IXYS Availability: 0In Stock700 On Order Expected MOSFETs 8mAmps 1000V | 0In Stock700 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | 20 V | 2 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | |||||
Mfr: IRFZ44SPBF TTI: IRFZ44SPBF Vishay Semiconductors Availability: 0In Stock8,000 On Order Expected MOSFETs N-Chan 60V 50 Amp | 0In Stock8,000 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 2 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
Mfr: SIR870DP-T1-GE3 TTI: SIR870DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 100-V(D-S) | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5 mOhms | 20 V | 1.2 V | 84 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR870DP-GE3 | |||
0In Stock900 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | ||||||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: SI7997DP-T1-GE3 TTI: SI7997DP-T1-GE3 Vishay Semiconductors Availability: 0In Stock12,000 On Order Expected MOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock12,000 On Order Expected | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 30 V | 60 A | 5.5 mOhms | 20 V | 2.2 V | 106 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7997DP-GE3 | |||
Mfr: SI8487DB-T1-E1 TTI: SI8487DB-T1-E1 Vishay Semiconductors Availability: 0In Stock12,000 On Order Expected 10-May-27 MOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock12,000 On Order Expected 10-May-27 | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 7.7 A | 25 mOhms | 12 V | 1.2 V | 80 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI8487DB-E1 | |||
Mfr: SI1902CDL-T1-BE3 TTI: SI1902CDL-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT363 2NCH 20V 1A | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.1 A | 235 mOhms | 12 V | 1.5 V | 2 nC | - 55 C | + 150 C | 420 mW | Enhancement | TrenchFET | Reel | SI1902CDL-T1-GE3 | |||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 0In Stock1,975 On Order Expected 04-Aug-27 MOSFETs TO247 400V 16A N-CH MOSFET | 0In Stock1,975 On Order Expected 04-Aug-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube |