SMD - MOSFETs
5,434 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 150 V | 120 A | 16 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | |||||||
Mfr: SIR401DP-T1-GE3 TTI: SIR401DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 50 A | 2.5 mOhms | - 12 V, 12 V | 1.5 V | 310 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR401DP-GE3 | |||
Mfr: SI3443DDV-T1-GE3 TTI: SI3443DDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 4 A | 90 mOhms | - 12 V, 12 V | 1.5 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3443DDV-T1-BE3 | |||
Mfr: SIR826ADP-T1-GE3 TTI: SIR826ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.6 mOhms | - 20 V, 20 V | 1.2 V | 86 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | TSMT-8 | N-Channel, P-Channel | 2 Channel | 60 V | 2 A, 3 A | 112 mOhms, 210 mOhms | - 20 V, 20 V | 2.5 V, 3 V | 4 nC, 7.2 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | QS8M31 | |||||
Mfr: SISS22LDN-T1-GE3 TTI: SISS22LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 60V PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 60 V | 92.5 A | 3.65 mOhms | - 20 V, 20 V | 2.5 V | 17.4 nC, 37.3 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: TK31V60X,LQ TTI: TK31V60X,LQ Toshiba Availability: 0In StockMOSFETs DTMOSIV-High Speed 600V 88mVGS=10V) | 0In Stock | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 30.8 A | 78 mOhms | - 30 V, 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 240 W | Enhancement | DTMOSIV-H | Reel | ||||
Mfr: SISA24DN-T1-GE3 TTI: SISA24DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 60A Id 17.2nC Qg Typ. | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 25 V | 60 A | 1.15 mOhms | - 16 V, 20 V | 1 V | 55 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: RV2C002UNT2L TTI: RV2C002UNT2L ROHM Semiconductor Availability: 0In StockMOSFETs 1.2V Drive Nch MOSFET | 0In Stock | Si | SMD/SMT | DFN-1006-3 | N-Channel | 1 Channel | 20 V | 180 mA | 2 Ohms | - 8 V, 8 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | Reel | RV2C002UN | |||||
Mfr: SI7456DDP-T1-GE3 TTI: SI7456DDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 27.8 A | 27 mOhms | - 20 V, 20 V | 2.8 V | 19.5 nC | - 55 C | + 150 C | 35.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2307CDS-T1-GE3 TTI: SI2307CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-GE3 | |||
Mfr: IXFT220N20X3HV TTI: IXFT220N20X3HV IXYS Availability: 0In StockMOSFETs TO268 200V 220A N-CH X3CLASS | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 220 A | 6.2 mOhms | - 20 V, 20 V | 2.5 V | 204 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 18 A | 120 mOhms | - 15 V, 15 V | 4.5 V | 39 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||||
Mfr: SI2328DS-T1-GE3 TTI: SI2328DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | TrenchFET | Reel | SI2328DS-T1-BE3 SI2328DS-GE3 | |||
Mfr: SIB456DK-T1-GE3 TTI: SIB456DK-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 100 V | 6.3 A | 153 mOhms | - 20 V, 20 V | 1.6 V | 5 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 150 A | 850 uOhms | - 20 V, 20 V | 1.4 V | 103 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: SI8457DB-T1-E1 TTI: SI8457DB-T1-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 12 V | 10.2 A | 15 mOhms | - 8 V, 8 V | 900 mV | 93 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISH625DN-T1-GE3 TTI: SISH625DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds; 20V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | P-Channel | 1 Channel | 30 V | 35 A | 7 mOhms | - 20 V, 20 V | 2.5 V | 126 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2328DS-T1-E3 TTI: SI2328DS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | TrenchFET | Reel | SI2328DS-T1-BE3 SI2328DS-E3 | |||
Mfr: SI7216DN-T1-GE3 TTI: SI7216DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 6 A | 32 mOhms | - 20 V, 20 V | 1 V | 19 nC | - 50 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SI7216DN-GE3 | |||
Mfr: SIA471DJ-T1-GE3 TTI: SIA471DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Pch 30V Vds 20V Vgs PowerPAK SC-70-6L | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 30.3 A | 11.5 mOhms | - 20 V, 16 V | 2.5 V | 18.5 nC | - 55 C | + 150 C | 19.2 W | Enhancement | Reel | |||||
Mfr: SI2333CDS-T1-GE3 TTI: SI2333CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V 5.1A 2.5W 35 mohms @ 4.5V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 7.1 A | 35 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2333CDS-T1-BE3 SI2333CDS-GE3 | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
Mfr: TPH2R506PL,L1Q TTI: TPH2R506PL,L1Q Toshiba Availability: 0In StockMOSFETs N-Ch 60V 4180pF 60nC 160A 132W | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 160 A | 1.9 mOhms | - 20 V, 20 V | 1.5 V | 60 nC | - 55 C | + 175 C | 132 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SI7454FDP-T1-RE3 TTI: SI7454FDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT669 100V 23.5A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 23.5 A | 29.5 mOhms | - 20 V, 20 V | 2.4 V | 17.4 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel |
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