MOSFETs
18,590 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI9926CDY-T1-GE3 TTI: SI9926CDY-T1-GE3. Vishay / Siliconix Availability: 2,680In StockCut Tape MOSFETs SOIC8 2NCH 20V 8A | 2,680In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 8 A | 18 mOhms | - 12 V, 12 V | 600 mV | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Cut Tape | |||||
Mfr: SQJ500AEP-T1-GE3 TTI: SQJ500AEP-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PPAKSO8 NPCH 40V 30A | 3,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQ3989EV-T1-BE3 TTI: SQ3989EV-T1-BE3 Vishay Availability: 12,000In StockMOSFETs TSOP6 2PCH 30V 2.5A | 12,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQJ858AEP-T1-BE3 TTI: SQJ858AEP-T1-BE3 Vishay Availability: 15,000In StockMOSFETs PPAKSO8 N-CH 40V 58A | 15,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQJB00EP-T1-BE3 TTI: SQJB00EP-T1-BE3 Vishay Availability: 6,000In StockMOSFETs PPAKSO8 2NCH 60V 30A | 6,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQJ154EP-T1-GE3 TTI: SQJ154EP-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAKSO8 N-CH 40V 243A | 3,000In Stock | Si | SMD/SMT | PowerPAK SO-8L | N-Channel | 1 Channel | 40 V | 243 A | 2.5 mOhms | - 20 V, 20 V | 3.5 V | 43 nC | - 55 C | + 175 C | 214 W | Enhancement | ||||||
Mfr: SQS142ENW-T1-GE3 TTI: SQS142ENW-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs PPAK1218 N-CH 40V 110A | 3,000In Stock | Si | SMD/SMT | PowerPAK 1212-8SLW | N-Channel | 1 Channel | 40 V | 110 A | 4.5 mOhms | - 20 V, 20 V | 3.3 V | 23 nC | - 55 C | + 175 C | 113 W | Enhancement | ||||||
3,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 500 V | 5 A | 1.5 Ohms | - 30 V, 30 V | 4 V | 15.4 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
3,000In Stock | Si | SMD/SMT | SOT-26-6 | N-Channel, P-Channel | 2 Channel | 30 V | 2.3 A, 3.3 A | 72 mOhms, 150 mOhms | - 20 V, 20 V | 3 V | 2.8 nC, 2.5 nC | - 55 C | + 150 C | 1.136 W | Enhancement | Reel | ||||||
7,500In Stock | Si | Reel | ||||||||||||||||||||
2,500In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SI1032R-T1-GE3. TTI: SI1032R-T1-GE3. Vishay Availability: 350In StockLimited Supply Cut Tape MOSFETs SOT416 N-CH 20V .14A | 350In StockLimited Supply | Si | Cut Tape | |||||||||||||||||||
15,000In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SQD50N10-8M9L-GE3 TTI: SQD50N10-8M9L-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs RECOMMENDED ALT SQD5 | 2,000In Stock | Si | AEC-Q101 | TrenchFET | Reel | |||||||||||||||||
Mfr: SQJ403BEEP-T1-BE3 TTI: SQJ403BEEP-T1-BE3 Vishay Availability: 6,000In StockMOSFETs PPAKSO8 P-CH 30V 30A | 6,000In Stock | Si | Reel | |||||||||||||||||||
Panjit Availability: 30,000In Stock30,000 On Order Expected 03-Dec-26 MOSFETs DFN3333 P-CH 60V 15A | 30,000In Stock30,000 On Order Expected 03-Dec-26 | Reel | ||||||||||||||||||||
Mfr: XP65AN1K2IT TTI: XP65AN1K2IT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 650V 7A TO-220CFM-T | 6,000In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 7 A | 1.2 Ohms | - 30 V, 30 V | 4 V | 28 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
6,000In Stock | Si | SMD/SMT | TO-252-3/2 | P-Channel | 1 Channel | 40 V | 60 A | 12.3 mOhms | - 20 V, 20 V | 3 V | 44 nC | - 55 C | + 150 C | 69 W | Enhancement | Reel | ||||||
800In Stock | Si | Reel | ||||||||||||||||||||
800In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SQD23N06-31L-GE3 TTI: SQD23N06-31L-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs RECOMMENDED ALT SQD2 | 2,000In Stock | Si | AEC-Q100 | TrenchFET | Reel | |||||||||||||||||
Mfr: SI2319CDS-T1-GE3 TTI: SI2319CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-BE3 SI2319CDS-GE3 | |||
Mfr: IRLL110TRPBF TTI: IRLL110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 1.5 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF-BE3 | ||||
Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 0In Stock126,000 On Order Expected MOSFETs 60V Vds 20V Vgs SOT-23 | 0In Stock126,000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | - 20 V, 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | ||||
0In Stock4,500 On Order Expected 10-Jun-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 4 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF640PBF-BE3 |
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