N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||||
Mfr: RF9G120BKFRATCR TTI: RF9G120BKFRATCR ROHM Semiconductor Availability: 0In StockMOSFETs Nch 40V 12A, DFN2020Y7LSAA, Power MOSFET for Automotive AEC-Q101 | 0In Stock | Si | SMD/SMT | DFN-6 | N-Channel | 1 Channel | 40 V | 12 A | 17.5 mOhms | 20 V | 2.5 V | 8.5 nC | - 55 C | + 150 C | 23 W | Enhancement | Reel | |||||
Mfr: SIDR622DP-T1-GE3 TTI: SIDR622DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 64.6 A | 17.7 mOhms | 20 V | 2.5 V | 27 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IXTH1N200P3HV TTI: IXTH1N200P3HV IXYS Availability: 0In StockMOSFETs 2000V/1A HV Power MOSFET, TO-247HV | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 2 kV | 1 A | 40 Ohms | 20 V | 2 V | 23.5 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: SIHP24N80AEF-GE3 TTI: SIHP24N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 20A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 20 A | 170 mOhms | 30 V | 4 V | 60 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
Mfr: SUP70042E-GE3 TTI: SUP70042E-GE3 Vishay Availability: 0In StockMOSFETs TO220 100V 150A N-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-220AB | N-Channel | 1 Channel | 100 V | 150 A | 4 mOhms | 10 V | 4 V | 84 nC | - 55 C | + 175 C | 278 W | Tube | ||||||
Mfr: IXTP60N20X4 TTI: IXTP60N20X4 IXYS Availability: 0In StockMOSFETs 200V, 60A current capacity, Ultra junction X4, TO-220 package, MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 60 A | 21 mOhms | 20 V | 4.5 V | 11 nC | - 55 C | + 175 C | 250 W | Enhancement | X4-Class | Tube | ||||
Mfr: SIDR626EP-T1-RE3 TTI: SIDR626EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs PPAKSO8 N-CH 60V 50.8A | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 20 V | 4 V | - 55 C | + 175 C | Enhancement | Reel | |||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 60 V | 93 A | 2.4 mOhms | 20 V | 4 V | 120 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | ISOPLUS-i5-PAK-3 | N-Channel | 1 Channel | 4.7 kV | 2 A | 20 Ohms | 20 V | 3.5 V | 180 nC | - 55 C | + 150 C | 220 W | Enhancement | ISOPLUS i5-PAC | Tube | |||||
Mfr: R6022YNXC7G TTI: R6022YNXC7G ROHM Semiconductor Availability: 0In StockMOSFETs TO220 650V 66A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 600 V | 66 A | 165 mOhms | 30 V | 6 V | 33 nC | - 55 C | + 150 C | 65 W | Enhancement | Tube | |||||
Mfr: R6086YNZ4C13 TTI: R6086YNZ4C13 ROHM Semiconductor Availability: 0In StockMOSFETs TO247 650V 258A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247G-3 | N-Channel | 1 Channel | 600 V | 258 A | 44 mOhms | 30 V | 6 V | 110 nC | - 55 C | + 150 C | 781 W | Enhancement | Tube | |||||
Mfr: R6061YNXC7G TTI: R6061YNXC7G ROHM Semiconductor Availability: 0In StockMOSFETs Nch 600V 26A, TO-220FM, Power MOSFET: R6061YNX is a power MOSFET with Low on - resistance, suitable for switching. | 0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 600 V | 26 A | 60 mOhms | 30 V | 6 V | 76 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube | |||||
Mfr: SIS178LDN-T1-GE3 TTI: SIS178LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 70V 13.9A | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 70 V | 45.3 A | 9.5 mOhms | 20 V | 2.5 V | 18.7 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIZ256DT-T1-GE3 TTI: SIZ256DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAIR3X3 2NCH 70V 11.5A | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 70 V | 31.8 A | 17.6 mOhms | 12 V | 1.5 V | 8.2 nC | - 55 C | + 150 C | 33 W | TrenchFET | Reel | ||||||
Mfr: RQ3E180AJTB1 TTI: RQ3E180AJTB1 ROHM Semiconductor Availability: 0In StockMOSFETs HSMT8 N-CH 30V 18A | 0In Stock | Si | SMD/SMT | HSMT-8 | N-Channel | 1 Channel | 30 V | 30 A | 4.5 mOhms | 12 V | 1.5 V | 39 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RQ3E180AJ | ||||
Mfr: RSJ301N10TL TTI: RSJ301N10TL ROHM Semiconductor Availability: 0In StockMOSFETs TO263 100V 30A N-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263S-3 | N-Channel | 1 Channel | 100 V | 30 A | 46 mOhms | 20 V | 2.5 V | 60 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | RSJ301N10 | ||||
Mfr: R6520ENXC7G TTI: R6520ENXC7G ROHM Semiconductor Availability: 0In StockMOSFETs TO220 650V 20A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 650 V | 20 A | 205 mOhms | 20 V | 4 V | 61 nC | - 55 C | + 150 C | 68 W | Enhancement | Tube | R6520ENX | ||||
Mfr: SI3438DV-T1-E3 TTI: SI3438DV-T1-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 40 V | 7.4 A | 35.5 mOhms | 20 V | 1.4 V | 20 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI3438DV-E3 | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 120 A | 6.1 mOhms | 20 V | 2 V | - 55 C | + 175 C | 200 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 144 A | 5.6 mOhms | 20 V | 4 V | 73 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 96 A | 24 mOhms | 20 V | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||||
Mfr: HT8KE6HTB1 TTI: HT8KE6HTB1 ROHM Semiconductor Availability: 0In StockMOSFETs HSMT8 100V 12.5A N CHAN | 0In Stock | Si | SMD/SMT | HSMT-8 | N-Channel | 2 Channel | 100 V | 12.5 A | 60 mOhms | 20 V | 4 V | 6.3 nC | - 55 C | + 150 C | 14 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | 20 V | 2.5 V | 104 nC | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube |