N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: R6030KNZ4C13 TTI: R6030KNZ4C13 ROHM Semiconductor Availability: 0In StockMOSFETs TO247 600V 30A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 130 mOhms | 20 V | 5 V | 56 nC | - 55 C | + 150 C | 305 W | Enhancement | Tube | R6030KNZ4 | ||||
Mfr: SSM6N35AFE,LF TTI: SSM6N35AFE,LF Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.25A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-563-6 | N-Channel | 2 Channel | 20 V | 250 mA | 750 mOhms | 10 V | 350 mV | 340 pC | - 55 C | + 150 C | 250 mW | Enhancement | U-MOSIII | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 160 A | 3.2 mOhms | 20 V | 1.5 V | 71 nC | - 55 C | + 175 C | 168 W | Enhancement | U-MOSIX-H | Tube | |||||
Mfr: RD3N07BBHTL1 TTI: RD3N07BBHTL1 ROHM Semiconductor Availability: 0In StockMOSFETs TO252 N-CH 80V 105A | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 80 V | 105 A | 4.4 mOhms | 20 V | 4 V | 46 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 50 A | 60 mOhms | 20 V | 5 V | 70 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 30 V | 6 A | 39.1 mOhms | - 8 V, 12 V | 1 V | 3.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SI8466EDB-T2-E1 TTI: SI8466EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 1 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 5.4 A | 43 mOhms | 5 V | 350 mV | 13 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHD690N60E-GE3 TTI: SIHD690N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V DPAK (TO-252) N-CHANNEL | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 6.4 A | 700 mOhms | 30 V | 5 V | 8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Tube | |||||
Mfr: IRFR220TRPBF-BE3 TTI: IRFR220TRPBF-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs TO252 200V 4.8A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: R6061YNZ4C13 TTI: R6061YNZ4C13 ROHM Semiconductor Availability: 0In StockMOSFETs TO247 650V 183A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 183 A | 60 mOhms | 30 V | 6 V | 76 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | WLCSP-22 | N-Channel | 2 Channel | 30 V | 20 A | 3 mOhms | - 2 V, 10 V | 2 V | 29 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | ||||||
Mfr: SIZ200DT-T1-GE3 TTI: SIZ200DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20/-16V Vgs PowerPAIR 3x3S | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 60 A, 61 A | 5.5 mOhms, 5.8 mOhms | - 16 V, 20 V | 1.1 V | 28 nC, 30 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube | ||||||
Mfr: IRFPC50PBF TTI: IRFPC50PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO247 600V 11A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 11 A | 600 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||
Mfr: SUP90330E-GE3 TTI: SUP90330E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 35.8 A | 31.2 mOhms | 20 V | 2 V | 32 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Tube | ||||
Mfr: SIRA52DP-T1-GE3 TTI: SIRA52DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.7 mOhms | - 16 V, 20 V | 2.4 V | 150 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: TPN2R805PL,L1Q TTI: TPN2R805PL,L1Q Toshiba Availability: 0In StockMOSFETs U-MOSIX-H 45V 139A 39nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 45 V | 139 A | 2.2 mOhms | 20 V | 1.4 V | 39 nC | + 175 C | 104 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: IRFIBE20GPBF TTI: IRFIBE20GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 800V 1.4A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.4 A | 6.5 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 30 W | Enhancement | Tube | |||||
Mfr: RX3N07BBHC16 TTI: RX3N07BBHC16 ROHM Semiconductor Availability: 0In StockMOSFETs TO220 N-CH 80V 100A | 0In Stock | Si | Through Hole | TO-220AB-3 | N-Channel | 1 Channel | 80 V | 100 A | 5.1 mOhms | 20 V | 4 V | 46 nC | - 55 C | + 150 C | 89 W | Enhancement | Tube | |||||
Mfr: SIR112DP-T1-RE3 TTI: SIR112DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 133 A | 1.96 mOhms | - 16 V, 20 V | 1.1 V | 59 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR680ADP-T1-RE3 TTI: SIR680ADP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80V PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 125 A | 2.88 mOhms | 20 V | 3.5 V | 43 nC, 55 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SSM3K341R,LXHF TTI: SSM3K341R,LXHF Toshiba Availability: 0In StockMOSFETs N Channel 60V 6A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 6 A | 36 mOhms | 20 V | 1.5 V | 9.3 nC | - 55 C | + 175 C | 2.4 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SI7434ADP-T1-RE3 TTI: SI7434ADP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 250V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 250 V | 3.7 A | 150 mOhms | 20 V | 4 V | 16.5 nC | - 55 C | + 150 C | 54.3 W | Enhancement | PowerPAK | Reel | ||||
Mfr: RE1C001UNTCL TTI: RE1C001UNTCL ROHM Semiconductor Availability: 0In StockMOSFETs SOT416 N-CH 20V .1A | 0In Stock | Si | SMD/SMT | SOT-416FL-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3.5 Ohms | 8 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RE1C001UN | |||||
Mfr: RD3P03BBHTL1 TTI: RD3P03BBHTL1 ROHM Semiconductor Availability: 0In StockMOSFETs TO252 100V 35A N-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 100 V | 35 A | 23 mOhms | 20 V | 4 V | 12.4 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel |