P-Channel - MOSFETs
1,945 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SiRS4301DP-T1-GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs P-Channel 30 V (D-S) MOSFET PowerPAK SO-8, 1.5 mohm a. 10V, 2.3 mohm a. 4.5V | 0In Stock | Si | SMD/SMT | PowerPAK - SO-8S | P-Channel | 1 Channel | 30 V | 227 A | 1.5 mOhms | 20 V | 2.3 V | 365 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 30 V | 2 A | 117 mOhms | 20 V | 2.6 V | 5.3 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSII | Reel | ||||
Mfr: SQD50P08-28_GE3 TTI: Not Assigned Vishay / Siliconix Availability: 0In StockMOSFETs P-Channel 80V AEC-Q101 Qualified | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 80 V | 48 A | 23 mOhms | 20 V | 3.5 V | 145 nC | - 55 C | + 175 C | 136 W | Enhancement | AEC-Q101 | TrenchFET | Bulk | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | TrenchP | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 60 V | 20 A | 0.055 Ohms | 20 V | 2.5 V | 27 nC | - 55 C | + 175 C | 46 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 45 V | 2 A | 190 mOhms | 20 V | 3 V | 9.5 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RQ5H020SP | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 40 V | 50 A | 22 mOhms | 20 V | 2.5 V | 60 nC | - 55 C | + 175 C | 136 W | Enhancement | |||||||
Mfr: TJ20S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 41W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 20 A | 22.2 mOhms | - 20 V, 10 V | 3 V | 37 nC | + 175 C | 41 W | Enhancement | AEC-Q101 | Reel | TJ20S04M3L,LXHQ(O | ||||
Mfr: SSM3J371R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-4A S | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 4 A | 55 mOhms | - 8 V, 6 V | 1 V | 10.4 nC | + 175 C | 2 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM6J808R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | P-Channel | 1 Channel | 40 V | 7 A | 48 mOhms | - 20 V, 10 V | 2 V | 24.2 nC | + 150 C | 1.5 W | AEC-Q101 | Reel | SSM6J808R,LXHF(B | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 60 V | 29 A | 55 mOhms | - 20 V, 5 V | 2.5 V | 27 nC | - 55 C | + 175 C | 53 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | HPLF-5 | P-Channel | 1 Channel | 40 V | 120 A | 4.6 mOhms | - 20 V, 5 V | 2.5 V | 130 nC | - 55 C | + 175 C | 150 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 60 V | 80 A | 10.7 mOhms | - 20 V, 5 V | 2.5 V | 145 nC | - 55 C | + 175 C | 142 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 0.024 Ohms | 8 V | 1 V | 34.8 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: SSM3J372R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -30V -6A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 6 A | 42 mOhms | - 12 V, 6 V | 1.2 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM3J377R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P Channel -20V -3.9A AECQ MOSFET | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | TSMT-8 | P-Channel | 1 Channel | 12 V | 7 A | 14 mOhms | 8 V | 1V | 80 nC | - 55 C | + 150 C | 1.5 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 60 V | 48 A | 30 mOhms | - 20 V, 5 V | 2.5 V | 48 nC | - 55 C | + 175 C | 77 W | Enhancement | Reel | ||||||
Mfr: SSM3J374R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-30V Vgss:-20/+10V Id:-4A | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 4 A | 71 mOhms | - 20 V, 10 V | 2 V | 5.9 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: RD3G08BBJHRBTL TTI: Not Assigned ROHM Semiconductor Availability: 0In StockMOSFETs Pch -40V -80A, TO-252 (DPAK), Power MOSFET for Automotive | 0In Stock | Si | SMD/SMT | DPAK-3 | P-Channel | 1 Channel | 40 V | 80 A | 4.9 mOhms | - 20 V, 5 V | 2.5 V | 145 nC | - 55 C | + 175 C | 142 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 200 V | 16 A | 160 mOhms | Tube | |||||||||||||
Mfr: SSM6J206FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SS FET P-Ch 0.32Ohm -2A -8V | 0In Stock | Si | P-Channel | 1 Channel | Reel |