N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 800 V | 44 A | 190 mOhms | 30 V | 5 V | 198 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFIBF20GPBF TTI: IRFIBF20GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 900V 1.2A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 1.2 A | 8 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 30 W | Enhancement | Tube | |||||
Mfr: IXFX78N50P3 TTI: IXFX78N50P3 IXYS Availability: 0In StockMOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 78 A | 68 mOhms | 30 V | 5 V | 147 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHFR420TRL-GE3 TTI: SIHFR420TRL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 20V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 2 V | 17 nC | - 55 C | + 150 C | 83 W | Enhancement | Reel | |||||
Mfr: SISS30LDN-T1-GE3 TTI: SISS30LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 80 V | 55.5 A | 8.5 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: R6049YNXC7G TTI: R6049YNXC7G ROHM Semiconductor Availability: 0In StockMOSFETs Nch 600V 22A, TO-220FM, Power MOSFET: R6049YNX is a power MOSFET with low on - resistance, suitable for switching. | 0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 600 V | 22 A | 82 mOhms | 30 V | 6 V | 65 nC | - 55 C | + 150 C | 90 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 250 V | 240 A | 5 mOhms | 20 V | 2.5 V | 345 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | 20 V | 5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 40 mOhms | 20 V | 3 V | 150 nC | - 55 C | + 150 C | Enhancement | CoolMOS | Tube | ||||||
Mfr: SIHH20N50E-T1-GE3 TTI: SIHH20N50E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 500 V | 22 A | 128 mOhms | 30 V | 2 V | 84 nC | - 55 C | + 150 C | 174 W | Enhancement | Reel | |||||
Mfr: SIHB35N60E-GE3 TTI: SIHB35N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 32 A | 82 mOhms | 30 V | 4 V | 88 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: SIHA240N60E-GE3 TTI: SIHA240N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds; +/-30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | 30 V | 3 V | 23 nC | - 55 C | + 150 C | 31 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 45.3 A | 13.5 mOhms | 20 V | 4 V | 10 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | ||||||
Mfr: SIDR608EP-T1-RE3 TTI: SIDR608EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 45-V (D-S) 175C MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 40 V | 228 A | 1.36 mOhms | - 16 V, 20 V | 2.3 V | 167 nC | - 55 C | + 175 C | 125 W | Enhancement | Reel | |||||
Mfr: RF6L025BGTCR TTI: RF6L025BGTCR ROHM Semiconductor Availability: 0In StockMOSFETs SOT363 N-CH 60V 2.5A | 0In Stock | Si | SMD/SMT | SOT-363T-6 | N-Channel | 1 Channel | 60 V | 2.5 A | 91 mOhms | 20 V | 2.5 V | 3.1 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | |||||
Mfr: SISA10DN-T1-GE3 TTI: SISA10DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs For New Design See: 78-SISHA10DN-T1-GE3 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 30 A | 2.8 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | SISA10DN-GE3 | |||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 1.2 kV | 30 A | 350 mOhms | 30 V | 6.5 V | 310 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: RS6L090BGTB1 TTI: RS6L090BGTB1 ROHM Semiconductor Availability: 0In StockMOSFETs HSOP8 N-CH 60V 90A | 0In Stock | Si | SMD/SMT | HSOP-8 | N-Channel | 1 Channel | 60 V | 90 A | 4.7 mOhms | 20 V | 2.5 V | 28 nC | - 55 C | + 150 C | 73 W | Enhancement | Reel | RS6L090BG | ||||
Mfr: IRL510STRLPBF TTI: IRL510STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 5.6 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 10 V | 1 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 kV | 5 A | 2.8 Ohms | 30 V | 6 V | 33.4 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | 20 V | 5 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 500 mOhms | 30 V | 6.5 V | 255 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 310 mOhms | 30 V | 3 V | 18.5 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SSM3K72KFS,LF TTI: SSM3K72KFS,LF Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.3A VDSS=60V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 60 V | 300 mA | 1.05 Ohms | 20 V | 1.1 V | 600 pC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel |