Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI2356DS-T1-BE3 TTI: SI2356DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 N-CH 40V 3.2A | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2356DS-T1-GE3 | ||||
Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 0In Stock1,975 On Order Expected 04-Aug-27 MOSFETs TO247 400V 16A N-CH MOSFET | 0In Stock1,975 On Order Expected 04-Aug-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI4850EY-T1-E3 TTI: SI4850EY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | 20 V | 1 V | 27 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-E3 | |||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: SI7997DP-T1-GE3 TTI: SI7997DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 30 V | 60 A | 5.5 mOhms | 20 V | 2.2 V | 106 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7997DP-GE3 | |||
Mfr: IRFP240PBF TTI: IRFP240PBF Vishay Semiconductors Availability: 0In Stock500 On Order Expected 02-Nov-26 MOSFETs TO247 200V 20A N-CH MOSFET | 0In Stock500 On Order Expected 02-Nov-26 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 20 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: IRF9630PBF-BE3 TTI: IRF9630PBF-BE3 Vishay / Siliconix Availability: 0In Stock950 On Order Expected 29-May-29 MOSFETs TO220 200V 6.5A P-CH MOSFET | 0In Stock950 On Order Expected 29-May-29 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF | ||||
Mfr: SUM40014M-GE3 TTI: SUM40014M-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO263 N-CH 40V 200A | 0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 40 V | 200 A | 990 uOhms | 20 V | 2.4 V | 182 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: IRL640PBF-BE3 TTI: IRL640PBF-BE3 Vishay / Siliconix Availability: 0In Stock2,000 On Order Expected 06-Apr-27 MOSFETs TO220 200V 17A N-CH MOSFET | 0In Stock2,000 On Order Expected 06-Apr-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRL640PBF | ||||
Mfr: SI7116DN-T1-E3 TTI: SI7116DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 16.4 A | 7.8 mOhms | 20 V | 2.5 V | 15 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7116DN-E3 | |||
Mfr: SI2333CDS-T1-BE3 TTI: SI2333CDS-T1-BE3 Vishay / Siliconix Availability: 0In Stock3,000 On Order Expected 08-Dec-26 MOSFETs SOT23 P-CH 12V 5.1A | 0In Stock3,000 On Order Expected 08-Dec-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 7.1 A | 35 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2333CDS-T1-E3 | ||||
Mfr: SSM6N813R,LXHF TTI: SSM6N813R,LXHF Toshiba Availability: 0In Stock9,000 On Order Expected 25-Jan-27 MOSFETs AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F | 0In Stock9,000 On Order Expected 25-Jan-27 | Si | SMD/SMT | TSOP6F | N-Channel | 2 Channel | 100 V | 3.5 A | 88 mOhms | 20 V | 2.5 V | 3.6 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6N813R,LXHF(B | ||||
Mfr: SI2328DS-T1-BE3 TTI: SI2328DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT233 100V 1.15A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | Reel | SI2328DS-T1-E3 | ||||
Mfr: SIR681DP-T1-RE3 TTI: SIR681DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAKSO8 P-CH 80V 17.6A | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | P-Channel | 1 Channel | 80 V | 71.9 A | 11.2 mOhms | 20 V | 2.6 V | 31.7 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2304DDS-T1-BE3 TTI: SI2304DDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 30 V (D-S) | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 60 mOhms | 20 V | 1.2 V | 6.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2304DDS-T1-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 2.6 mOhms | 20 V | 2.3 V | 275 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7145DP-GE3 | ||||
Mfr: IXTA26P20P TTI: IXTA26P20P IXYS Availability: 0In Stock250 On Order Expected 25-Mar-27 MOSFETs -26.0 Amps -200V 0.170 Rds | 0In Stock250 On Order Expected 25-Mar-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | 20 V | 2 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Mfr: SIA446DJ-T1-GE3 TTI: SIA446DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 150 V | 7.7 A | 145 mOhms | 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR626LDP-T1-RE3 TTI: SIR626LDP-T1-RE3 Vishay / Siliconix Availability: 0In Stock12,000 On Order Expected 28-Jun-27 MOSFETs 60V Vds; 20V Vgs PowerPAK SO-8 | 0In Stock12,000 On Order Expected 28-Jun-27 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 186 A | 1.5 mOhms | 20 V | 1 V | 135 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 14 mOhms | 20 V | 2.5 V | 60 nC | - 55 C | + 175 C | 230 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIR626DP-T1-RE3 TTI: SIR626DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 100 A | 1.4 mOhms | 20 V | 3.5 V | 102 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA421DJ-T1-GE3 TTI: SIA421DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 35 mOhms | 10 V | 1.5 V | 19 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA421DJ-GE3 | |||
Mfr: SUD19N20-90-BE3 TTI: SUD19N20-90-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 200V (D-S | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-E3 | |||
Mfr: SIS782DN-T1-GE3 TTI: SIS782DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 9.5 mOhms | 20 V | 1 V | 30.5 nC | - 50 C | + 150 C | 41 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS782DN-GE3 | |||
Mfr: SI3127DV-T1-GE3 TTI: SI3127DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -60V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 60 V | 5.1 A | 146 mOhms | 20 V | 3 V | 30 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel |