N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: RQ6E045SNTR TTI: RQ6E045SNTR ROHM Semiconductor Availability: 0In StockMOSFETs SOT457 N-CH 30V 4.5A | 0In Stock | Si | SMD/SMT | SOT-457-6 | N-Channel | 1 Channel | 30 V | 4.5 A | 38 mOhms | 20 V | 2.5 V | 6.8 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RQ6E045SN | ||||
Mfr: SUM90330E-GE3 TTI: SUM90330E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 31.2 mOhms | 20 V | 2 V | 32 nC | - 55 C | + 175 C | 125 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 4 A | 850 mOhms | 30 V | 3 V | 8.3 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXFK220N17T2 TTI: IXFK220N17T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 170 V | 220 A | 6.3 mOhms | 20 V | 5 V | 500 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SIS780DN-T1-GE3 TTI: SIS780DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 18 A | 13.5 mOhms | 20 V | 1 V | 24.5 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS780DN-GE3 | |||
Mfr: SIHG24N65E-E3 TTI: SIHG24N65E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIR688DP-T1-GE3 TTI: SIR688DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 60 A | 2.9 mOhms | 20 V | 1.3 V | 66 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 170 A | 14 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 10 A | 740 mOhms | 30 V | 5 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | PolarHV | Tube | |||||
Mfr: IXFK360N15T2 TTI: IXFK360N15T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 360 A | 4 mOhms | 20 V | 2.5 V | 715 nC | - 55 C | + 175 C | 1.67 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHW21N80AE-GE3 TTI: SIHW21N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO247 800V 17.4A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 17.4 A | 235 mOhms | 30 V | 2 V | 48 nC | - 55 C | + 150 C | 32 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 52 A | 125 mOhms | 30 V | 3.5 V | 245 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: R6014YNXC7G TTI: R6014YNXC7G ROHM Semiconductor Availability: 0In StockMOSFETs TO220 650V 42A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 600 V | 14 A | 260 mOhms | 30 V | 6 V | 20 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | R6014YNX | ||||
Mfr: R6077VNZ4C13 TTI: R6077VNZ4C13 ROHM Semiconductor Availability: 0In StockMOSFETs TO247 650V 231A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 600 V | 77 A | 51 mOhms | 30 V | 6.5 V | 108 nC | - 55 C | + 150 C | 781 W | Enhancement | Tube | R6077VNZ4 | ||||
Mfr: RH6L040BGTB1 TTI: RH6L040BGTB1 ROHM Semiconductor Availability: 0In StockMOSFETs HSMT8 N-CH 60V 65A | 0In Stock | Si | SMD/SMT | HSMT-8 | N-Channel | 1 Channel | 60 V | 65 A | 7.1 mOhms | 20 V | 2.5 V | 18.8 nC | - 55 C | + 150 C | 59 W | Enhancement | Reel | RH6L040BG | ||||
0In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 650 V | 10 A | 380 mOhms | 20 V | 5 V | 33 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | ||||||
Mfr: XP4NAR95CMT-A TTI: XP4NAR95CMT-A YAGEO XSemi Availability: 0In StockMOSFETs N-CH 45V 58A PMPAK-5x6 | 0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 45 V | 264 A | 950 uOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: SIR4608LDP-T1-GE3 TTI: SIR4608LDP-T1-GE3 Vishay Availability: 0In StockMOSFETs PPAKSO8 N-CH 60V 13.3A | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 43.4 A | 11.5 mOhms | 20 V | 3 V | 15 nC | - 55 C | + 150 C | 39 W | Enhancement | ||||||
Mfr: R8019KNXC7G TTI: R8019KNXC7G ROHM Semiconductor Availability: 0In StockMOSFETs 800V 19A, TO-220FM, High-speed switching Power MOSFET: The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. | 0In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 800 V | 19 A | 265 mOhms | 20 V | 4.5 V | 65 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
Mfr: RF6G035BGTCR TTI: RF6G035BGTCR ROHM Semiconductor Availability: 0In StockMOSFETs SOT363 N-CH 40V 3.5A | 0In Stock | Si | SMD/SMT | SOT-363T-6 | N-Channel | 1 Channel | 40 V | 3.5 A | 46 mOhms | 20 V | 2.5 V | 3.5 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | |||||
Mfr: SIRS4300DP-T1-RE3 TTI: SIRS4300DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAKSO8 N-CH 30V 90A | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8S | N-Channel | 1 Channel | 30 V | 680 A | 400 uOhms | - 16 V, 20 V | 2.2 V | 180 nC | - 55 C | + 150 C | 278 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | ||||||
Mfr: SI7636DP-T1-GE3 TTI: SI7636DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 28A 5.2W 4.0mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 28 A | 4 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7636DP-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 96 A | 29 mOhms | 30 V | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube |