Si - MOSFETs
17,626 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIA910EDJ-T1-GE3 TTI: SIA910EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 12 V | 4.5 A | 28 mOhms | 8 V | 400 mV | 16 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA910EDJ-GE3 | |||
0In Stock5,000 On Order Expected 07-Apr-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 3.3 A | 1.5 Ohms | 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRF610PBF-BE3 | |||||
Mfr: IRF9520PBF-BE3 TTI: IRF9520PBF-BE3 Vishay / Siliconix Availability: 0In Stock2,000 On Order Expected 29-May-29 MOSFETs TO220 100V 6.8A P-CH MOSFET | 0In Stock2,000 On Order Expected 29-May-29 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF9520PBF | ||||
Mfr: SSM3J355R,LF TTI: SSM3J355R,LF Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-6A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 23 mOhms | 10 V | 1 V | 16.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel | ||||
Mfr: SUM60061EL-GE3 TTI: SUM60061EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO263 P-CH 80V 150A | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 80 V | 150 A | 8.6 mOhms | 20 V | 2.5 V | 218 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2392ADS-T1-GE3 TTI: SI2392ADS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 102 mOhms | 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2392ADS-T1-BE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | 20 V | 3 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: SI4490DY-T1-GE3 TTI: SI4490DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 4 A | 80 mOhms | 20 V | 2 V | 42 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4490DY-GE3 | |||
Mfr: SI7489DP-T1-GE3 TTI: SI7489DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-GE3 | |||
Mfr: SI7288DP-T1-GE3 TTI: SI7288DP-T1-GE3 Vishay Semiconductors Availability: 0In Stock33,000 On Order Expected MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock33,000 On Order Expected | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 20 A | 19 mOhms | 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | SI7288DP-GE3 | |||
Mfr: SI2365EDS-T1-BE3 TTI: SI2365EDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 P-CH 20V 4.5A | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.9 A | 26.5 mOhms | 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2365EDS-T1-GE3 | ||||
Mfr: IRL640SPBF TTI: IRL640SPBF Vishay Semiconductors Availability: 0In Stock1,500 On Order Expected MOSFETs N-Chan 200V 17 Amp | 0In Stock1,500 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SSM3J332R,LF TTI: SSM3J332R,LF Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS 12V VGSS -6A -30VDSS | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | ||||||||||||||||
Mfr: SI4850EY-T1-GE3 TTI: SI4850EY-T1-GE3 Vishay Semiconductors Availability: 0In Stock5,000 On Order Expected 28-May-29 MOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock5,000 On Order Expected 28-May-29 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | 20 V | 1 V | 18 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-GE3 | |||
Mfr: IRFL9110TRPBF TTI: IRFL9110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 1.1 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 100 V | 1.1 A | 1.2 Ohms | 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL9110TRPBF-BE3 | ||||
Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 0In Stock1,600 On Order Expected 09-Feb-27 MOSFETs TO263 400V 10A N-CH MOSFET | 0In Stock1,600 On Order Expected 09-Feb-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SI2333DDS-T1-BE3 TTI: SI2333DDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 P-CH 12V 5A | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 6 A | 23 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2333DDS-T1-GE3 | ||||
Mfr: SIA431DJ-T1-GE3 TTI: SIA431DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 70 mOhms | 8 V | 850 mV | 60 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA431DJ-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 250 V | 360 mA | 4 Ohms | 15 V | - 55 C | + 125 C | 1.1 W | Depletion | Clare | Reel | |||||||
Mfr: SIA537EDJ-T1-GE3 TTI: SIA537EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V, 20 V | 4.5 A | 23 mOhms, 44 mOhms | 8 V | 400 mV | 16 nC, 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2312CDS-T1-BE3 TTI: SI2312CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 N-CH 20V 5A | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2312CDS-T1-GE3 | ||||
Mfr: SSM3K324R,LF TTI: SSM3K324R,LF Toshiba Availability: 0In StockMOSFETs N-Ch U-MOSVI FET ID 4A 30VDSS 200pF | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVII-H | Reel | ||||||||||||||||
Mfr: SI3493DDV-T1-GE3 TTI: SI3493DDV-T1-GE3 Vishay / Siliconix Availability: 0In Stock6,000 On Order Expected 17-Apr-28 MOSFETs -20V Vds 8V Vgs TSOP-6 | 0In Stock6,000 On Order Expected 17-Apr-28 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 20 mOhms | 8 V | 1 V | 52.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | |||||
Mfr: SI4909DY-T1-GE3 TTI: SI4909DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 40 V | 8 A | 27 mOhms | 20 V | 1.2 V | 63 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRLR014PBF TTI: IRLR014PBF Vishay Semiconductors Availability: 0In Stock3,000 On Order Expected 16-Sep-26 MOSFETs RECOMMENDED ALT IRLR | 0In Stock3,000 On Order Expected 16-Sep-26 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube |