Si - MOSFETs
17,639 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFP350PBF TTI: IRFP350PBF Vishay Semiconductors Availability: 0In Stock1,975 On Order Expected 04-Aug-27 MOSFETs TO247 400V 16A N-CH MOSFET | 0In Stock1,975 On Order Expected 04-Aug-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 400 V | 16 A | 300 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI4850EY-T1-E3 TTI: SI4850EY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | 20 V | 1 V | 27 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-E3 | |||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: SI7997DP-T1-GE3 TTI: SI7997DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 30 V | 60 A | 5.5 mOhms | 20 V | 2.2 V | 106 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7997DP-GE3 | |||
Mfr: IRFP240PBF TTI: IRFP240PBF Vishay Semiconductors Availability: 0In Stock500 On Order Expected 02-Nov-26 MOSFETs TO247 200V 20A N-CH MOSFET | 0In Stock500 On Order Expected 02-Nov-26 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 20 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: IRF9630PBF-BE3 TTI: IRF9630PBF-BE3 Vishay / Siliconix Availability: 0In Stock950 On Order Expected 29-May-29 MOSFETs TO220 200V 6.5A P-CH MOSFET | 0In Stock950 On Order Expected 29-May-29 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF | ||||
Mfr: IRFL9110TRPBF TTI: IRFL9110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 1.1 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 100 V | 1.1 A | 1.2 Ohms | 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL9110TRPBF-BE3 | ||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 250 V | 360 mA | 4 Ohms | 15 V | - 55 C | + 125 C | 1.1 W | Depletion | Clare | Reel | |||||||
Mfr: IRF9530PBF TTI: IRF9530PBF Vishay Semiconductors Availability: 0In Stock2,000 On Order Expected MOSFETs TO220 100V 12A P-CH MOSFET | 0In Stock2,000 On Order Expected | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9530PBF-BE3 | ||||
Mfr: SI4909DY-T1-GE3 TTI: SI4909DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 40 V | 8 A | 27 mOhms | 20 V | 1.2 V | 63 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA537EDJ-T1-GE3 TTI: SIA537EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V, 20 V | 4.5 A | 23 mOhms, 44 mOhms | 8 V | 400 mV | 16 nC, 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 20 mOhms | 8 V | 1 V | 52.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | ||||||
Mfr: SI7155DP-T1-GE3 TTI: SI7155DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 40 V | 100 A | 3.6 mOhms | 20 V | 2.3 V | 220 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | |||||
Mfr: SIR422DP-T1-GE3 TTI: SIR422DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 6.6 mOhms | 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 34.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR422DP-GE3 | |||
Mfr: SSM3J332R,LF TTI: SSM3J332R,LF Toshiba Availability: 0In StockMOSFETs SM Sig P-CH MOS 12V VGSS -6A -30VDSS | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | ||||||||||||||||
Mfr: SI4850EY-T1-GE3 TTI: SI4850EY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | 20 V | 1 V | 18 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-GE3 | |||
Mfr: SI2312CDS-T1-BE3 TTI: SI2312CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 N-CH 20V 5A | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2312CDS-T1-GE3 | ||||
Mfr: SI2333DDS-T1-BE3 TTI: SI2333DDS-T1-BE3 Vishay / Siliconix Availability: 0In Stock477,000 On Order Expected MOSFETs SOT23 P-CH 12V 5A | 0In Stock477,000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 6 A | 23 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2333DDS-T1-GE3 | ||||
Mfr: SI2365EDS-T1-BE3 TTI: SI2365EDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 P-CH 20V 4.5A | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.9 A | 26.5 mOhms | 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2365EDS-T1-GE3 | ||||
Mfr: SI4896DY-T1-GE3 TTI: SI4896DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 9.5 A | 16.5 mOhms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4896DY-GE3 | |||
Mfr: SUM110P06-07L-E3 TTI: SUM110P06-07L-E3 Vishay Semiconductors Availability: 0In Stock800 On Order Expected 03-Jun-27 MOSFETs 60V 110A 375W | 0In Stock800 On Order Expected 03-Jun-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 6.9 mOhms | 20 V | 1 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM110P06-07L | |||
Mfr: IRFR120PBF TTI: IRFR120PBF Vishay Semiconductors Availability: 0In Stock8,175 On Order Expected 07-Apr-27 MOSFETs N-Chan 100V 7.7 Amp | 0In Stock8,175 On Order Expected 07-Apr-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | IRFR120PBF-BE3 | ||||
Mfr: SI4190ADY-T1-GE3 TTI: SI4190ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 18.4 A | 7.3 mOhms | 20 V | 1.5 V | 67 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4190ADY-GE3 | |||
Mfr: SI7850DP-T1-E3 TTI: SI7850DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 6.2 A | 22 Ohms | 20 V | 3 V | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7850DP-E3 | |||
Mfr: SI7415DN-T1-GE3 TTI: SI7415DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 5.7 A | 65 mOhms | 20 V | 3 V | 25 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7415DN-GE3 |