N-Channel - MOSFETs
8,155 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IXFB100N50Q3 TTI: IXFB100N50Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/100A | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 500 V | 100 A | 49 mOhms | 30 V | 3.5 V | 255 nC | - 55 C | + 150 C | 1.56 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHB17N80E-T1-GE3 TTI: SIHB17N80E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs E Series Power | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 800 V | 15 A | 290 mOhms | 30 V | 2 V | 122 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRL640PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 2 Channel | 100 V | 4.5 A | 58 mOhms | 20 V | 2.5 V | 6.7 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | SH8KE6 | |||||
Mfr: RQ3L120BLFRATCB TTI: RQ3L120BLFRATCB ROHM Semiconductor Availability: 0In StockMOSFETs HSMT N CHAN 60V | 0In Stock | Si | SMD/SMT | HSMT-8 | N-Channel | 1 Channel | 60 V | 12 A | 30 mOhms | 20 V | 4 V | 7.5 nC | - 55 C | + 150 C | 40 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: RF7G120BLFRATCR TTI: RF7G120BLFRATCR ROHM Semiconductor Availability: 0In StockMOSFETs DFN2020 N-CH 40V 12A | 0In Stock | Si | SMD/SMT | DFN2020-8 | N-Channel | 1 Channel | 40 V | 12 A | 19 mOhms | 4 V | 2.5 V | 8.5 nC | - 55 C | + 150 C | 23 W | Enhancement | Reel | |||||
Mfr: RS6E122BGTB1 TTI: RS6E122BGTB1 ROHM Semiconductor Availability: 0In StockMOSFETs HSOP8 N-CH 30V 155A | 0In Stock | Si | SMD/SMT | HSOP-8 | N-Channel | 1 Channel | 30 V | 155 A | 2.16 mOhms | 20 V | 2.5 V | 50 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
Mfr: SI5448DU-T1-GE3 TTI: SI5448DU-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 40 V | 25 A | 6.46 mOhms | - 16 V, 20 V | 1 V | 40 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIRA52DP-T1-RE3 TTI: SIRA52DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 2.3 mOhms | - 16 V, 20 V | 1.1 V | 97.5 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIJA58ADP-T1-GE3 TTI: SIJA58ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds; 20/-16V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 32.3 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
Mfr: RS7G200CGTB1 TTI: RS7G200CGTB1 ROHM Semiconductor Availability: 0In StockMOSFETs DFN5060 N-CH 40V 410A | 0In Stock | Si | SMD/SMT | DFN5060-8 | N-Channel | 1 Channel | 40 V | 410 A | 640 uOhms | 20 V | 2.5 V | 145 nC | - 55 C | + 175 C | 216 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | Clare | Reel | |||||||||||||||
Mfr: SIRA88BDP-T1-GE3 TTI: SIRA88BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAKSO8 N-CH 30V 19A | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 6.83 mOhms | - 16 V, 20 V | 2.4 V | 12.2 nC | - 55 C | + 150 C | 17 W | Enhancement | TrenchFET | Reel | ||||
Mfr: RF9G120BLFRATCR TTI: RF9G120BLFRATCR ROHM Semiconductor Availability: 0In StockMOSFETs DFN2020 N-CH 40V 12A | 0In Stock | Si | SMD/SMT | DFN-7 | N-Channel | 1 Channel | 40 V | 12 A | 18 mOhms | 20 V | 4 V | 8.5 nC | - 55 C | + 150 C | 23 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1 A | 10 Ohms | 20 V | 4 V | 9 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 3 A | 1.5 Ohms | 20 V | 4.5 V | 40 nC | - 55 C | + 150 C | 125 W | Depletion | Tube | ||||||
Mfr: IRFBC40ASTRLPBF TTI: IRFBC40ASTRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 600V 6.2 Amp | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SUP40N25-60-E3 TTI: SUP40N25-60-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 250V 40A 300W 60mohm @ 10V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 40 A | 49 mOhms | 30 V | 2 V | 140 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI7892BDP-T1-GE3 TTI: SI7892BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V 25A 5.4W 4.2mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 15 A | 4.2 mOhms | 20 V | 3 V | 27 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7892BDP-GE3 | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 110 A | 6.6 mOhms | 20 V | 2 V | 57 nC | - 55 C | + 175 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXFP180N10T2 TTI: IXFP180N10T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 100V 180A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 180 A | 6 mOhms | 20 V | 2 V | 185 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 1 A | 20 Ohms | 20 V | 4.5 V | 17.6 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 70 A | 45 mOhms | 20 V | 3.5 V | 150 nC | - 55 C | + 150 C | 625 W | Enhancement | CoolMOS | Tube |