N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | 20 V | 5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
Mfr: SI4946CDY-T1-GE3 TTI: SI4946CDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 60 V | 6.1 A | 51.6 mOhms | 20 V | 3 V | 2.4 nC | - 55 C | + 150 C | 2.8 W | Enhancement | Reel | |||||
Mfr: SIRA80DP-T1-RE3 TTI: SIRA80DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 620 uOhms | - 16 V, 20 V | 2.2 V | 125 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: CPC3981ZTR TTI: CPC3981ZTR IXYS Availability: 0In StockMOSFETs N-CH DEP MOSFET 800V 45 Oh SOT-223-2L TR | 0In Stock | Si | SMD/SMT | SOT-223-2 | N-Channel | 1 Channel | 800 V | 100 mA | 32.5 Ohms | 15 V | - 55 C | + 150 C | 2.25 W | Depletion | Reel | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 13 A | 420 mOhms | 30 V | 5 V | 105 nC | - 55 C | + 150 C | 208 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 3.5 A | 3 Ohms | 30 V | 3 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.2 A | 13 Ohms | 20 V | 2.5 V | 15.5 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | ||||||
Mfr: IRFUC20PBF TTI: IRFUC20PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 600V 2.0 Amp | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | 20 V | 2 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 96 A | 24 mOhms | 20 V | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 500 mOhms | 30 V | 6.5 V | 255 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | 30 V | - 55 C | + 175 C | 480 W | HiPerFET | Tube | ||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 86 A | 29 mOhms | 30 V | 5 V | 90 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFR220TRRPBF TTI: IRFR220TRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 200V 4.8A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRL510STRLPBF TTI: IRL510STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 5.6 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 10 V | 1 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
Mfr: SIHP12N50E-GE3 TTI: SIHP12N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | SIHP12N50E-BE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 120 A | 6.1 mOhms | 20 V | 2 V | - 55 C | + 175 C | 200 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 70 A | 12 mOhms | 20 V | 2 V | 46 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 700 V | 12 A | 300 mOhms | 30 V | 2.5 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 700 V | 12 A | 300 mOhms | 30 V | 2.5 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-3P | N-Channel | 200 V | 130 A | 16 mOhms | 20 V | 2.5 V | - 55 C | + 175 C | 830 W | HiPerFET | Tube |