N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SISS54DN-T1-GE3 TTI: SISS54DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 30V 51.1A | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 30 V | 185.6 A | 1.06 mOhms | - 12 V, 16 V | 2.2 V | 47.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: BUK9Y22-60ELX TTI: BUK9Y22-60ELX Nexperia Availability: Not Available OnlineMOSFETs BUK9Y22-60EL/SOT669/LFPAK | Not Available Online | Si | SMD/SMT | SOT-669-5 | N-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 10 V | 2.1 V | 34 nC | - 55 C | + 175 C | 95 W | Enhancement | Reel | 934664843115 | ||||
Mfr: SIHB055N60EF-GE3 TTI: SIHB055N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 600V | 0In Stock | Si | SMD/SMT | TO-263AB-4 | N-Channel | 1 Channel | 600 V | 46 A | 55 mOhms | 30 V | 5 V | 63 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | |||||
Mfr: BUK7M6R7-40HX TTI: BUK7M6R7-40HX Nexperia Availability: Not Available OnlineMOSFETs BUK7M6R7-40H/SOT1210/mLFPAK | Not Available Online | Si | SMD/SMT | LFPAK-33-8 | N-Channel | 1 Channel | 40 V | 50 A | 6.7 Ohms | 20 V | 2.4 V | 24 nC | - 55 C | + 175 C | 65 W | Enhancement | Reel | 934660785115 | ||||
Mfr: SUM90142E-GE3 TTI: SUM90142E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 90 A | 12.3 mOhms | 20 V | 2 V | 87 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SISB46DN-T1-GE3 TTI: SISB46DN-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 34 A | 11.71 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 3.5 A | 54 mOhms | 5 V | 350 mV | 4.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | |||||
Mfr: SIR510DP-T1-RE3 TTI: SIR510DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT669 100V 126A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 126 A | 3.6 mOhms | 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | 30 V | 4.5 V | 610 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SIR414DP-T1-GE3 TTI: SIR414DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 50 A | 2.3 mOhms | 20 V | 1 V | 117 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR414DP-GE3 | |||
Mfr: SIS468DN-T1-GE3 TTI: SIS468DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 30 A | 19.5 mOhms | 20 V | 1.5 V | 28 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS468DN-GE3 | |||
Mfr: IXFA6N120P TTI: IXFA6N120P IXYS Availability: 0In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 60 A | 45 mOhms | 20 V | 4.5 V | 255 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SI4420BDY-T1-E3 TTI: SI4420BDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 13.5A 0.0085Ohm | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 13.5 A | 8.5 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI4420BDY-E3 | |||
Mfr: RQ3E130BNTB TTI: RQ3E130BNTB ROHM Semiconductor Availability: 0In StockMOSFETs 4.5V Drive Nch MOSFET | 0In Stock | Si | SMD/SMT | HSMT-8 | N-Channel | 1 Channel | 30 V | 39 A | 6 mOhms | 20 V | 2.5 V | 36 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | RQ3E130BN | ||||
Mfr: SIZ340DT-T1-GE3 TTI: SIZ340DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 30 A, 40 A | 9.5 mOhms, 5.1 mOhms | - 16 V, 20 V | 1 V | 19 nC, 35 nC | - 55 C | + 150 C | 16.7 W, 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISH536DN-T1-GE3 TTI: SISH536DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 30V 24.7A | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 67.4 A | 3.25 mOhms | - 12 V, 16 V | 2.2 V | 16.6 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHA20N50E-GE3 TTI: SIHA20N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 500V 19A N-CH MOSFET | 0In Stock | Si | Through Hole | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | ||||||
Mfr: SIHP065N60E-BE3 TTI: SIHP065N60E-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 600V 40A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 40 A | 57 mOhms | 30 V | 3 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | SIHP065N60E-GE3 | ||||
Mfr: IXFP6N120P TTI: IXFP6N120P IXYS Availability: 0In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 15 A | 480 mOhms | 20 V | 2.5 V | 123 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 80 V | 150 A | 2.47 mOhms | 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube | ||||||
Mfr: SIRA60DP-T1-GE3 TTI: SIRA60DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 940 uOhms | - 16 V, 20 V | 1.1 V | 125 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRA90DP-T1-RE3 TTI: SIRA90DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds TrenchFET PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 650 uOhms | - 16 V, 20 V | 800 mV | 153 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel |