MOSFETs
18,340 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IXTX46N50L TTI: IXTX46N50L IXYS Availability: 780In Stock1,290 On Order Expected MOSFETs 44 Amps 500V | 780In Stock1,290 On Order Expected | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 500 V | 46 A | 160 mOhms | - 30 V, 30 V | 6 V | 260 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||
150In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 190 mOhms | - 30 V, 30 V | 2.5 V | 93 nC | - 55 C | + 150 C | 156 W | Enhancement | HiPerFET | Tube | |||||
240In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 200 A | 5.5 mOhms | - 30 V, 30 V | 2.5 V | 152 nC | - 55 C | + 175 C | 550 W | Enhancement | HiPerFET | Tube | |||||
Mfr: RSR025P03TL TTI: RSR025P03TL ROHM Semiconductor Availability: 3,000In StockMOSFETs P-CH 30V 2.5A TSMT3 | 3,000In Stock | Si | SMD/SMT | SOT-346T-3 | P-Channel | 1 Channel | 30 V | 2.5 A | 115 mOhms | - 20 V, 20 V | 2.5 V | 5.4 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | RSR025P03 | ||||
Mfr: SI4430BDY-T1-GE3 TTI: SI4430BDY-T1-GE3 Vishay / Siliconix Availability: 2,500In StockMOSFETs 30V 20A 3.0W 4.5mohm @ 10V | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 20 A | 4.5 mOhms | - 20 V, 20 V | 1 V | 36 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4430BDY-GE3 | |||
Mfr: R6004KNXC7G TTI: R6004KNXC7G ROHM Semiconductor Availability: 1,000In StockMOSFETs TO220 600V 4A N-CH MOSFET | 1,000In Stock | Si | Through Hole | TO-220FM-3 | N-Channel | 1 Channel | 600 V | 4 A | 980 mOhms | - 20 V, 20 V | 5 V | 10.2 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: BUK964R2-80E,118 TTI: BUK964R2-80E,118 Nexperia Availability: 4,800In StockMOSFETs SOT404 N-CH 80V 120A | 4,800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 80 V | 120 A | 4.2 mOhms | - 10 V, 10 V | 1.7 V | 123 nC | - 55 C | + 175 C | 349 W | Enhancement | Reel | 934066493118 | ||||
Mfr: SIHD14N60E-BE3 TTI: SIHD14N60E-BE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs N-CHANNEL 600V | 6,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 10.5 A | 380 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 114 W | Enhancement | Tube | SIHD14N60E-GE3 | ||||
Mfr: XP8NA2R2CXT TTI: XP8NA2R2CXT YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 80V 35A PMPAK-5x6X | 6,000In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 80 V | 168 A | 2.2 mOhms | - 20 V, 20 V | 4 V | 112 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: SIHP050N60E-GE3 TTI: SIHP050N60E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | - 30 V, 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: IXFP60N25X3 TTI: IXFP60N25X3 IXYS Availability: 250In StockMOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET | 250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 60 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 50 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHU6N62E-GE3 TTI: SIHU6N62E-GE3 Vishay / Siliconix Availability: 30,000In StockMOSFETs 620V Vds 30V Vgs IPAK (TO-251) | 30,000In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 620 V | 6 A | 900 mOhms | - 30 V, 30 V | 4 V | 17 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SIHB21N60EF-GE3 TTI: SIHB21N60EF-GE3 Vishay / Siliconix Availability: 2,000In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 2,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 21 A | 176 mOhms | - 30 V, 30 V | 2 V | 84 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: R8002CND3FRATL TTI: R8002CND3FRATL ROHM Semiconductor Availability: 5,000In StockMOSFETs TO252 800V 2A N-CH | 5,000In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 800 V | 2 A | 4.3 Ohms | - 30 V, 30 V | 5.5 V | 12.1 nC | - 55 C | + 150 C | 69 W | Enhancement | AEC-Q101 | Reel | R8002CND3FRA | |||
Mfr: SIHP125N60EF-GE3 TTI: SIHP125N60EF-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 600V 25A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 109 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | TrenchFET | Reel | ||||
30In Stock | Si | Through Hole | TO-247-3 | N-Channel | 200 V | 170 A | 14 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||||
Mfr: XP60SA290DH TTI: XP60SA290DH YAGEO XSemi Availability: 6,000In StockMOSFETs N-CH 600V 13. 3A TO-252 | 6,000In Stock | Si | SMD/SMT | TO-252-3/2 | N-Channel | 1 Channel | 600 V | 13.3 A | 290 mOhms | - 20 V, 20 V | 5 V | 30 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
Mfr: SIHH186N60EF-T1GE3 TTI: SIHH186N60EF-T1GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs PWRPK 600V 16A N-CH MOSFET | 3,000In Stock | Si | SMD/SMT | PowerPAK 8 x 8 | N-Channel | 1 Channel | 600 V | 16 A | 168 mOhms | - 30 V, 30 V | 5 V | 21 nC | - 55 C | + 150 C | 114 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHA17N80E-GE3 TTI: SIHA17N80E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs TO220 800V 15A N-CH MOSFET | 1,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: IRF840LCSPBF TTI: IRF840LCSPBF Vishay Semiconductors Availability: 200In StockMOSFETs TO263 500V 8A N-CH MOSFET | 200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SIHD6N80E-GE3 TTI: SIHD6N80E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 800V Vds 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | - 30 V, 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
Mfr: SIHD9N60E-GE3 TTI: SIHD9N60E-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 3,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9 A | 320 mOhms | - 30 V, 30 V | 4.5 V | 26 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | |||||
2,500In Stock | Si | 30 V | 10.2 A | 26 mOhms | - 25 V, 25 V | 2.5 V | 13.6 nC | - 50 C | + 150 C | 2.5 W | Reel | |||||||||||
Mfr: SIHP180N60E-GE3 TTI: SIHP180N60E-GE3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | - 30 V, 30 V | 3 V | 22 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube |
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