N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
3,250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF540PBF-BE3 | |||||
3,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | 20 V | 4 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF630PBF-BE3 | |||||
Mfr: SIDR668ADP-T1-RE3 TTI: SIDR668ADP-T1-RE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs N-Channel 100 V (D-S) MOSFET, PowerPAK SO-8DC | 12,000In Stock | Si | SMD/SMT | SO-8DC | N-Channel | 1 Channel | 100 V | 104 A | 4.8 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2374DS-T1-BE3 TTI: SI2374DS-T1-BE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs SOT23 N-CH 20V 4.5A | 9,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2374DS-T1-GE3 | ||||
13,950In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 14 A | 280 mOhms | 20 V | 4 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF644PBF-BE3 | |||||
Mfr: IRFBC40PBF TTI: IRFBC40PBF Vishay Semiconductors Availability: 650In StockMOSFETs TO220 600V 6.2A N-CH MOSFET | 650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF-BE3 | ||||
Mfr: SIR462DP-T1-GE3 TTI: SIR462DP-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 7.9 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR462DP-GE3 | |||
Mfr: IRFZ44PBF-BE3 TTI: IRFZ44PBF-BE3 Vishay / Siliconix Availability: 1,300In StockMOSFETs TO220 N-CH 60V 50A | 1,300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRFZ44PBF | ||||
21,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 200 mA | 3.9 Ohms | 20 V | 1.1 V | 270 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: RUC002N05T116 TTI: RUC002N05T116 ROHM Semiconductor Availability: 27,000In StockMOSFETs Ultra Lo Vtg 1.2V drive Nch MOSFET | 27,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 50 V | 200 mA | 2.2 Ohms | 8 V | 1 V | - 55 C | + 150 C | 350 mW | Enhancement | Reel | RUC002N05 | |||||
Mfr: IRF830APBF-BE3 TTI: IRF830APBF-BE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs TO220 500V 5A N-CH MOSFET | 3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | 30 V | 4.5 V | 24 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830APBF | ||||
450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | ||||||
Mfr: IRF840ASTRLPBF TTI: IRF840ASTRLPBF Vishay Semiconductors Availability: 10,400In StockMOSFETs N-Chan 500V 8.0 Amp | 10,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRF740ASPBF TTI: IRF740ASPBF Vishay Semiconductors Availability: 3,000In StockMOSFETs N-Chan 400V 10 Amp | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 2 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SSM3K15AMFV,L3F TTI: SSM3K15AMFV,L3F Toshiba Availability: 8,000In StockMOSFETs SM Sig N-CH MOS 30V 0.1A 20V VGSS | 8,000In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | ||||||||||||||||
Mfr: SIS890DN-T1-GE3 TTI: SIS890DN-T1-GE3 Vishay Semiconductors Availability: 3,000In Stock6,000 On Order Expected 21-Dec-26 MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock6,000 On Order Expected 21-Dec-26 | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 30 A | 19.5 mOhms | 20 V | 1.5 V | 29 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SIS890DN-GE3 | |||
Mfr: IRFP140PBF TTI: IRFP140PBF Vishay Semiconductors Availability: 10,600In Stock900 On Order Expected 02-Jun-27 MOSFETs TO247 100V 31A N-CH MOSFET | 10,600In Stock900 On Order Expected 02-Jun-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 31 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 180 W | Enhancement | Tube | |||||
650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | ||||||
Mfr: IRF840LCPBF TTI: IRF840LCPBF Vishay Semiconductors Availability: 550In StockMOSFETs TO220 500V 8A N-CH MOSFET | 550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840LCPBF-BE3 | ||||
570In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | |||||
Mfr: IRF510SPBF TTI: IRF510SPBF Vishay Semiconductors Availability: 1,700In StockMOSFETs N-Chan 100V 5.6 Amp | 1,700In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: SI3932DV-T1-GE3 TTI: SI3932DV-T1-GE3 Vishay Semiconductors Availability: 39,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 39,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | |||
Mfr: IRF640SPBF TTI: IRF640SPBF Vishay Semiconductors Availability: 3,350In StockMOSFETs N-Chan 200V 18 Amp | 3,350In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
250In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHB6N65E-GE3 TTI: SIHB6N65E-GE3 Vishay / Siliconix Availability: 1,000In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 30 V | 4 V | 24 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube |