Si - MOSFETs
17,626 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUD50P08-25L-E3 TTI: SUD50P08-25L-E3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 80V 50A 136W 25.2mohm @ 10V | 12,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 80 V | 50 A | 25.2 mOhms | 20 V | 1 V | 105 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P08-25L-BE3 | |||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 400In StockMOSFETs TO220 600V 9.2A N-CH MOSFET | 400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
Mfr: SI5457DC-T1-GE3 TTI: SI5457DC-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 12V Vgs 1206-8 ChipFET | 6,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 6 A | 56 mOhms | 12 V | 1.4 V | 38 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5457DC-GE3 | |||
Mfr: SIA436DJ-T1-GE3 TTI: SIA436DJ-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 8V Vds 5V Vgs PowerPAK SC-70 | 18,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 8 V | 12 A | 9.4 mOhms | 5 V | 350 mV | 15 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA436DJ-GE3 | |||
Mfr: SI1902CDL-T1-GE3 TTI: SI1902CDL-T1-GE3 Vishay Semiconductors Availability: 18,000In StockMOSFETs 20V Vds 12V Vgs SC70-6 | 18,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.1 A | 235 mOhms | 12 V | 1.5 V | 2 nC | - 55 C | + 150 C | 420 mW | Enhancement | TrenchFET | Reel | SI1902CDL-T1-BE3 SI1958DH-T1-GE3 | |||
Mfr: SUD50P06-15-GE3 TTI: SUD50P06-15-GE3 Vishay Semiconductors Availability: 4,000In StockMOSFETs 60V 50A 113W 15mohm @ 10V | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | |||
Mfr: IRF510SPBF TTI: IRF510SPBF Vishay Semiconductors Availability: 1,000In Stock700 On Order Expected 08-Sep-26 MOSFETs N-Chan 100V 5.6 Amp | 1,000In Stock700 On Order Expected 08-Sep-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: IRF840LCPBF TTI: IRF840LCPBF Vishay Semiconductors Availability: 550In StockMOSFETs TO220 500V 8A N-CH MOSFET | 550In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840LCPBF-BE3 | ||||
Mfr: IXTP76P10T TTI: IXTP76P10T IXYS Availability: 250In Stock300 On Order Expected 14-Dec-26 MOSFETs TO220 100V 76A P-CH TRENCH | 250In Stock300 On Order Expected 14-Dec-26 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 76 A | 24 mOhms | 15 V | 2 V | 197 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
Mfr: SIS890DN-T1-GE3 TTI: SIS890DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 30 A | 19.5 mOhms | 20 V | 1.5 V | 29 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SIS890DN-GE3 | |||
450In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | ||||||
Mfr: IRF840ASTRLPBF TTI: IRF840ASTRLPBF Vishay Semiconductors Availability: 18,400In StockMOSFETs N-Chan 500V 8.0 Amp | 18,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: TPH2R608NH,L1Q TTI: TPH2R608NH,L1Q Toshiba Availability: 15,000In StockMOSFETs Power MOSFET N-Channel Single | 15,000In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 75 V | 168 A | 2.6 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: IRFR9120PBF TTI: IRFR9120PBF Vishay Semiconductors Availability: 3,025In Stock30,000 On Order Expected MOSFETs P-Chan 100V 5.6 Amp | 3,025In Stock30,000 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SSM3J351R,LF TTI: SSM3J351R,LF Toshiba Availability: 54,000In Stock12,000 On Order Expected 04-Sep-26 MOSFETs Small-signal MOSFET ID -3.5A, -60V VDSS | 54,000In Stock12,000 On Order Expected 04-Sep-26 | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 60 V | 3.5 A | 164 mOhms | - 20 V, 10 V | 800 mV | 15.1 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||
Mfr: IRF740ASPBF TTI: IRF740ASPBF Vishay Semiconductors Availability: 3,000In StockMOSFETs N-Chan 400V 10 Amp | 3,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 2 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SUM110P04-05-E3 TTI: SUM110P04-05-E3 Vishay Semiconductors Availability: 2,400In StockMOSFETs 40V 110A 375W | 2,400In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 110 A | 5 mOhms | 20 V | 2 V | 185 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3932DV-T1-GE3 TTI: SI3932DV-T1-GE3 Vishay Semiconductors Availability: 39,000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 39,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 30 V | 3.7 A | 58 mOhms | 20 V | 1.2 V | 6 nC | - 55 C | + 150 C | 1.4 W | Enhancement | TrenchFET | Reel | SI3932DV-GE3 | |||
Mfr: IRFP140PBF TTI: IRFP140PBF Vishay Semiconductors Availability: 4,000In Stock10,000 On Order Expected MOSFETs TO247 100V 31A N-CH MOSFET | 4,000In Stock10,000 On Order Expected | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 31 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 180 W | Enhancement | Tube | |||||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 20,000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 20,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: SI2356DS-T1-BE3 TTI: SI2356DS-T1-BE3 Vishay / Siliconix Availability: 54,000In StockMOSFETs SOT23 N-CH 40V 3.2A | 54,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2356DS-T1-GE3 | ||||
Mfr: SI2371EDS-T1-BE3 TTI: SI2371EDS-T1-BE3 Vishay / Siliconix Availability: 18,000In StockMOSFETs SOT23 P-CH 30V 3.7A | 18,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2371EDS-T1-GE3 | ||||
Mfr: IRFP054PBF TTI: IRFP054PBF Vishay Semiconductors Availability: 21,500In StockMOSFETs TO247 N-CH 60V 70A | 21,500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 14 mOhms | 20 V | 2 V | 160 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
60In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 16 A | 300 mOhms | 20 V | 2 V | 199 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||||
Mfr: IRFP460LCPBF TTI: IRFP460LCPBF Vishay Semiconductors Availability: 875In StockMOSFETs TO247 500V 20A N-CH MOSFET | 875In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube |