N-Channel - MOSFETs
8,177 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | ||||||
Mfr: SIDR626LDP-T1-RE3 TTI: SIDR626LDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAKSO8 N-CH 60V 45.6A | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 204 A | 1.2 mOhms | 20 V | 2.5 V | 89 nC | - 55 C | + 155 C | 125 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF-BE3 | |||||
Mfr: SIS862DN-T1-GE3 TTI: SIS862DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 60 V | 40 A | 7 mOhms | 20 V | 1.5 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: TPH3R70APL,L1Q TTI: TPH3R70APL,L1Q Toshiba Availability: 0In StockMOSFETs SOP8 100V 150A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 150 A | 3.7 mOhms | 20 V | 1.5 V | 67 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SUD25N15-52-E3 TTI: SUD25N15-52-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V 25A 136W 52mohm @ 10V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 25 A | 52 mOhms | 20 V | 2 V | 40 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD25N15-52-BE3 | |||
Mfr: SI7898DP-T1-GE3 TTI: SI7898DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 3 A | 85 mOhms | 20 V | 2 V | 17 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7898DP-GE3 | |||
Mfr: SI4816BDY-T1-GE3 TTI: SI4816BDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816DY-T1-E3-S | |||
Mfr: IRFR024TRPBF-BE3 TTI: IRFR024TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 N-CH 60V 14A | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR024TRPBF | ||||
Mfr: SI4288DY-T1-GE3 TTI: SI4288DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 40 V | 9.2 A | 20 mOhms | 20 V | 1.2 V | 10 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4288DY-GE3 | |||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 180 A | 10 mOhms | 20 V | 5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | PolarHT | Tube | |||||
Mfr: SI7116DN-T1-GE3 TTI: SI7116DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 16.4 A | 7.8 mOhms | 20 V | 2.5 V | 15 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7116DN-GE3 | |||
Mfr: AG045FLS4FRATCB TTI: AG045FLS4FRATCB ROHM Semiconductor Availability: 0In StockMOSFETs Nch 60V 120A, HPLF5060T5LSAH, Power MOSFET for Automotive : AG045FLS4FRA is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for Automotive Systems. | 0In Stock | Si | SMD/SMT | HPLF-5 | N-Channel | 1 Channel | 60 V | 120 A | 2.6 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 175 C | 150 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SI1922EDH-T1-BE3 TTI: SI1922EDH-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT363 2NCH 20V 1.3A | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 120 A | 23 mOhms | 30 V | 3 V | 230 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||||
Mfr: SI4896DY-T1-E3 TTI: SI4896DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 9.5 A | 16.5 mOhms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4896DY-E3 | |||
Mfr: IRFR430ATRPBF TTI: IRFR430ATRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 500V 5A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.7 Ohms | 30 V | 2 V | 24 nC | - 55 C | + 150 C | 110 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 57 A | 27 mOhms | 20 V | 2 V | 130 nC | - 55 C | + 175 C | 300 W | Enhancement | TrenchFET | Tube | |||||
Mfr: SISS32DN-T1-GE3 TTI: SISS32DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds; 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 63 A | 7.2 mOhms | 20 V | 2 V | 42 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SSM6N16FUTE85LF TTI: SSM6N16FUTE85LF Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 100 mA | 5.2 Ohms | 10 V | 1.1 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 600 mA | 34 Ohms | 20 V | 2 V | 13.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | 30 V | 2 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | ||||||
Mfr: SI7430DP-T1-E3 TTI: SI7430DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 26 A | 45 mOhms | 20 V | 3.5 V | 43 nC | - 55 C | + 150 C | 64 W | Enhancement | TrenchFET | Reel | SI7430DP-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | 30 V | 2.5 V | 610 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SUM65N20-30-E3 TTI: SUM65N20-30-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V 65A 375W 30mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 65 A | 30 mOhms | 20 V | 2 V | 130 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM65N20-30 |