SMD - MOSFETs
5,434 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 33 mOhms, 33 mOhms | - 8 V, 8 V | 1 V | 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA975DJ-GE3 | ||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel, P-Channel | 2 Channel | 20 V | 1.5 A, 1.6 A | 247 mOhms, 430 mOhms | - 10 V, - 8 V, 8 V, 10 V | 350 mV, 300 mV | 7.5 nC, 6.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: IRLL110TRPBF-BE3 TTI: IRLL110TRPBF-BE3 Vishay / Siliconix Availability: 0In Stock10,000 On Order Expected MOSFETs SOT223 100V 1.5A N-CH MOSFET | 0In Stock10,000 On Order Expected | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF | ||||
Mfr: SI4459ADY-T1-GE3 TTI: SI4459ADY-T1-GE3 Vishay Semiconductors Availability: 0In Stock5,000 On Order Expected 01-Jun-27 MOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock5,000 On Order Expected 01-Jun-27 | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 29 A | 5 mOhms | - 20 V, 20 V | 1 V | 129 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4459ADY-GE3 | |||
Mfr: SI2356DS-T1-BE3 TTI: SI2356DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 N-CH 40V 3.2A | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | - 12 V, 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2356DS-T1-GE3 | ||||
Mfr: SSM3K36MFV,L3F TTI: SSM3K36MFV,L3F Toshiba Availability: 0In Stock760,000 On Order Expected MOSFETs Small-signal FET 0.5A 20V 46pF 1.52 | 0In Stock760,000 On Order Expected | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 20 V | 500 mA | 630 mOhms | - 5 V, 5 V | 350 mV | 1.23 nC | + 150 C | 150 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 4.5 kV | 3 A | 80 Ohms | - 20 V, 20 V | 3.5 V | 46 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | ||||||
Mfr: RY7P250BMTBC TTI: RY7P250BMTBC ROHM Semiconductor Availability: 0In StockMOSFETs DFN8080 100V 300A N CHAN | 0In Stock | Si | SMD/SMT | DFN8080-8 | N-Channel | 1 Channel | 100 V | 300 A | 1.86 mOhms | 20 V | 4 V | 170 nC | - 55 C | + 175 C | 340 W | Enhancement | Reel | |||||
Mfr: TPN11006PL,LQ TTI: TPN11006PL,LQ Toshiba Availability: 0In Stock6,000 On Order Expected 12-Oct-26 MOSFETs POWER MOSFET TRANSISTOR | 0In Stock6,000 On Order Expected 12-Oct-26 | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 54 A | 11.4 mOhms | - 20 V, 20 V | 1.5 V | 17 nC | - 55 C | + 175 C | 61 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: RSQ035N06HZGTR TTI: RSQ035N06HZGTR ROHM Semiconductor Availability: 0In Stock12,000 On Order Expected 04-Jun-26 MOSFETs SOT457 N-CH 60V 3.5A | 0In Stock12,000 On Order Expected 04-Jun-26 | Si | SMD/SMT | SOT-457T-6 | N-Channel | 1 Channel | 60 V | 3.5 A | 70 mOhms | - 20 V, 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | AEC-Q101 | Reel | RSQ035N06HZG | |||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 60 V | 250 mA | 2.4 Ohms | - 20 V, 20 V | 2.3 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | UM6K31N | ||||||
Mfr: IRFR9220TRPBF-BE3 TTI: IRFR9220TRPBF-BE3 Vishay / Siliconix Availability: 0In Stock2,000 On Order Expected 11-Aug-26 MOSFETs TO252 200V 3.6A P-CH MOSFET | 0In Stock2,000 On Order Expected 11-Aug-26 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9220TRPBF | ||||
Mfr: SI7820DN-T1-E3 TTI: SI7820DN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | - 20 V, 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-T1 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-GE3 | ||||
Mfr: BSS84AHZGT116 TTI: BSS84AHZGT116 ROHM Semiconductor Availability: 0In Stock36,000 On Order Expected 30-Dec-30 MOSFETs AECQ | 0In Stock36,000 On Order Expected 30-Dec-30 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 230 mA | 5.3 Ohms | - 20 V, 20 V | 2.5 V | - 55 C | + 150 C | 350 mW | Enhancement | AEC-Q101 | Reel | BSS84AHZG | ||||
Mfr: SIS782DN-T1-GE3 TTI: SIS782DN-T1-GE3 Vishay Semiconductors Availability: 0In Stock3,000 On Order Expected 28-Oct-26 MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock3,000 On Order Expected 28-Oct-26 | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 30.5 nC | - 50 C | + 150 C | 41 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS782DN-GE3 | |||
Mfr: RQ1E050RPHZGTR TTI: RQ1E050RPHZGTR ROHM Semiconductor Availability: 0In Stock36,000 On Order Expected 17-Sep-26 MOSFETs Pch -30V -5A Small Signal MOSFET: RQ1E050RPHZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101. | 0In Stock36,000 On Order Expected 17-Sep-26 | Si | SMD/SMT | TSMT-8 | P-Channel | 1 Channel | 30 V | 5 A | 31 mOhms | - 20 V, 20 V | 2.5 V | 13 nC | - 55 C | + 150 C | 1.5 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SIHLL110TR-GE3 TTI: SIHLL110TR-GE3 Vishay / Siliconix Availability: 0In Stock2,500 On Order Expected 16-Feb-27 MOSFETs 100V Vds 20V Vgs SOT-223 | 0In Stock2,500 On Order Expected 16-Feb-27 | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 10 V, 10 V | 1 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
Mfr: SISH536DN-T1-GE3 TTI: SISH536DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PPAK1212 N-CH 30V 24.7A | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 67.4 A | 3.25 mOhms | - 12 V, 16 V | 2.2 V | 16.6 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 16 A | 73 mOhms | - 20 V, 20 V | 4.5 V | 208 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||||
Mfr: TPH1R712MD,L1Q TTI: TPH1R712MD,L1Q Toshiba Availability: 0In StockMOSFETs P-Channel Mosfet 20V UMOS-VI | 0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.7 mOhms | - 12 V, 12 V | 500 mV | 182 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SIA929DJ-T1-GE3 TTI: SIA929DJ-T1-GE3 Vishay Semiconductors Availability: 0In Stock15,000 On Order Expected 07-Jul-26 MOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock15,000 On Order Expected 07-Jul-26 | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 52 mOhms, 52 mOhms | - 12 V, 12 V | 1.1 V | 21 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA929DJ-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 2 A | 300 mOhms | - 20 V, 20 V | 800 mV | 6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | MOSV | Reel | ||||
Mfr: SI7415DN-T1-E3 TTI: SI7415DN-T1-E3 Vishay Semiconductors Availability: 0In Stock15,000 On Order Expected 07-Sep-27 MOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock15,000 On Order Expected 07-Sep-27 | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 5.7 A | 65 mOhms | - 20 V, 20 V | 3 V | 25 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7415DN-E3 | |||
Mfr: SI8821EDB-T2-E1 TTI: SI8821EDB-T2-E1 Vishay Semiconductors Availability: 0In Stock3,000 On Order Expected 02-Jun-26 MOSFETs -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock3,000 On Order Expected 02-Jun-26 | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 2.3 A | 105 mOhms | - 12 V, 12 V | 1.3 V | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel |
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